Download or read book MBE Growth and Characterization of GaN AlN Structure Under Hydrostatic Pressure written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We present the results of a series of studies on the optical properties of GaN and AlGaN/GaN heterostructure using a variety of spectroscopic techniques. Strain effects were found to have a strong influence in determining the energies of excitonic transitions. The observations of spectral features associated with the transitions involving the ground and excited exciton states make it possible to directly estimate binding energy for the excitons in GaN. Optical pumping experiments were performed on AlGaN/GaN separate confinement heterostructures (SCH) grown on sapphire by MBE and SiC by MOCVD. The threshold pumping powers were found to be an order of magnitude lower than that for regular GaN epilayers. Nonlinear four wave mixing experiments were carried out in both femtosecond and picosecond regimes to study the intensity and time response of scattering efficiency, as well as the pump induced nonlinear refractive index change.
Download or read book MBE Growth and Characterization of GaN AlN Structures Under Hydrostatic Pressure written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We present the results of a series of studies on the optical properties of GaN and AlGaN/GaN heterostructures using a variety of spectroscopic techniques. Strain effects were found to have a strong influence in determining the energies of excitonic transitions. The observations of spectral features associated with the transitions involving the ground and excited exciton states make it possible to directly estimate binding energy for the excitons in GaN. Optical pumping experiments were performed on AlGaN/GaN separate confinement heterostructures (SCH) grown on sapphire by MBE and SiC by MOCVD. The threshold pumping powers were found to be an order of magnitude lowere than that for regular GaN epilayers. Nonlinear four-wave-mixing experiments were carried out in both femtosecond and picosecond regimes to study the intensity and time response of scattering efficiency, as well as the pump-induced nonlinear refractive index change.
Download or read book MBE Growth and Characterization of Zincblende GaN and GaN AlN Structures written by J. Song and published by . This book was released on 1997 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Program includes fundamental studies of Molecular beam epitaxial (MBE) growth of GaN and its related alloys and heterostructures. In additions, the optical and electrical properties of resultant materials were measured using a variety of spectroscopic techniques. The optical properties concentrated on optically-pumped stimulated emission and laser action in GaN/AlGaN heterostructures. The objective was to better understand the underlying physics of MBE growth, and the optical and electrical properties for GaN-based device application. 1.
Download or read book GaN AlN Multiple Quantum Well Structures written by Xinyu Liu and published by . This book was released on 2007 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy Growth and Characterization of GaN AlN and AlGaN GaN Heterostructures written by Stefan Davidsson and published by . This book was released on 2005 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot wall Low Pressure Chemical Vapor Deposition Growth and Characterization of GaN and Epitaxial AlN on Si 111 written by Karen Heinselman and published by . This book was released on 2016 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The physical and electronic properties of aluminum nitride (AlN) have made it attractive for a wide variety of applications, including bulk and surface acoustic wave (B/SAW) resonators and thin film dielectric coatings. Due to its wide band gap of 6.2 eV, AlN is a good insulator. The chemical durability of AlN makes it appealing for extreme environmental conditions. Its thermal expansion coefficient is similar to those of other semiconductor materials such as Si and SiC, making it appropriate for use in high temperature applications as well. In this work, we demonstrate the growth of AlN and GaN thin films using hotwall low pressure chemical vapor deposition (LPCVD) in order to obtain epitaxial AlN growth with a parallelizable, inexpensive method (relative to the current epitaxial growth method, molecular beam epitaxy). This dissertation demonstrates the growth of aluminum nitride thin films (between 70 nm and 1 [MICRO SIGN]m in thickness) on Si (111) substrates using hot-wall low pressure chemical vapor deposition (LPCVD) at 1000 ? C and 2 torr. Prior to growth, the substrates were pretreated in situ with dichlorosilane cleaning step, the parameters of which were varied to optimize the c-axis alignment of the grown thin film AlN. In addition, nucleation time for the aluminum precursor, trimethylaluminum (TMAl) was varied and optimized. X-ray diffraction (XRD) was performed on the samples for characterization. With the optimal nucleation time and dichlorosilane pretreatment, the 2[theta]-[omega] FWHM of the resulting AlN film was 1160 arcsec, and the FWHM of the [omega] rocking curve was 1.6? . These optimal parameters exhibited epitaxial AlN peaks aligned with the Si (111) substrate when characterized using a tilted phi scan XRD technique. Transmission electron microscopy (TEM) provides a second epitaxial alignment confirmation. Backside etching of the Si (111) substrate to create freestanding AlN thin film drums is demonstrated. This access to the back side of the AlN thin films allows the fabrication of future bulk acoustic wave (BAW) resonator devices and testing the piezoelectric response of these materials. For alternate applications, GaN was grown on AlN buffer layers on Si (111) substrates using hot-wall LPCVD. The resulting film was c-axis aligned, with an XRD FWHM of 1420 arcsec for the GaN (001) 2[theta]-[omega] peak, and the FWHM of the rocking curve was 3.8? . Capacitance-voltage data on the grown GaN on AlN indicate n-type films with residual electron concentrations of roughly 1017 cm[-]3 .
Download or read book MBE Growth and Charaterization of GaN Film written by Wenkai Zhu and published by . This book was released on 1999 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MBE Growth and Characterization of Gan Film written by Wenkai Zhu and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "MBE Growth and Characterization of GaN Film" by Wenkai, Zhu, 朱文凱, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3122217 Subjects: Gallium nitride Molecular beam epitaxy
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nitrides and Related Wide Band Gap Materials written by A. Hangleiter and published by . This book was released on 1999-08-19 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society (E-MRS) in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers. Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe (Germany, France, Russia and the United Kingdom) but there was also a remarkable number of contributions from overseas (USA, Japan and Korea.) For about 5 years now, semiconducting group-III nitrides have attracted an enormous level of research activity all over the world. Essentially this was triggered by the breakthroughs achieved by Shuji Nakamura and his group in Japan, who succeeded in making highly efficient blue, green and yellow light emitting diodes as well as violet laser diodes based on A1GaInN. Since then, intensive research related to material growth, device development, as well as to the fundamental properties of these materials is being carried out. The outstanding contribution of Shuji Nakamura to this field was underlined by his plenary lecture during this E-MRS meeting. He presented his most recent progress towards amber LED's and long-lived violet laser diodes.
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Download or read book III nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
