Download or read book Low Pressure Chemical Vapor Deposition LPCVD of Silicon Dioxide at High Temperatures written by Ara Philipossian and published by . This book was released on 1985 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition written by Theodore M. Besmann and published by The Electrochemical Society. This book was released on 1996 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Chemical Vapor Deposition CVD written by Hugh O. Pierson and published by William Andrew Publishing. This book was released on 1992-01-01 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive overview of the principles, technology and application of chemical vapor deposition (CVD), an extremely versatile process which can be used to manufacture coatings, powders, fibers and monolithic components. It presents a clear, objective, systematic assessment of CVD, including an e
Download or read book Low Pressure Chemical Vapor Deposition of Silicon Dioxide from Tetraethylorthosilicate written by Frank Allen Shemansky and published by . This book was released on 1991 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition written by Electrochemical Society. High Temperature Materials Division and published by The Electrochemical Society. This book was released on 1997 with total page 1686 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Formation of Low Temperature Silicon Dioxide Films Using Chemical Vapor Deposition written by Hsiao-Hui Chen and published by . This book was released on 1991 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. The process was characterized by applying traditional statistical studies and response surface technique. The uniformities within wafer and from wafer to wafer were examined by determining the mean and the standard deviation of films thicknesses. Response surface methodology was employed to determine the optimum process conditions. Time, temperature and gas flow ratio were used as the experimental factors. Index of refraction and deposition rate were used as the experimental responses. Additionally, etch rate, density, dielectric constant and infrared (IR) spectra were found for the silicon dioxide films prepared at the determined optimum condition. The IR spectra were obtained by employing Fourier Transform Infrared Spectroscopy (FTIR). The average deposition rate was found to be 46 A per minute and the average index of refraction was 1.44. The calculated density, activation energy, etch rate, dielectric constant and dielectric strength agreed with reported values. A double metal test run was performed using LTO oxide. The results indicated that the recommended baseline LTO process is suitable for multilayer metallization processes."--Abstract.
Download or read book Principles of Chemical Vapor Deposition written by D.M. Dobkin and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, and plasma discharge characteristics. In addition, the book includes discussions of practical films and reactors to help in the development of better processes and equipment. This book will assist workers new to chemical vapor deposition (CVD) to understand CVD reactors and processes and to comprehend and exploit the literature in the field. The book reviews several disparate fields with which many researchers may have only a passing acquaintance, such as heat and mass transfer, discharge physics, and surface chemistry, focusing on key issues relevant to CVD. The book also examines examples of realistic industrial reactors and processes with simplified analysis to demonstrate how to apply the principles to practical situations. The book does not attempt to exhaustively survey the literature or to intimidate the reader with irrelevant mathematical apparatus. This book is as simple as possible while still retaining the essential physics and chemistry. The book is generously illustrated to assist the reader in forming the mental images which are the basis of understanding.
Download or read book Chemical Vapor Deposition for Microelectronics written by Arthur Sherman and published by William Andrew. This book was released on 1987 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.
Download or read book Process and System Considerations for Low Temperature Oxide Low Pressure Chemical Vapor Deposition written by Xiaodong Wang and published by . This book was released on 1989 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987 written by Electrochemical Society. High Temperature Materials Division and published by . This book was released on 1987 with total page 1296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films written by and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Pressure Chemical Vapor Deposition of Silicon Dioxide Below 500C by the Pyrolysis of Diethylsilane in Oxygen written by James Douglas Patterson and published by . This book was released on 1990 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Pressure Chemical Vapor Deposition of Silicon Dioxide and Phosphosilicate Glass Thin Films written by Vijayalakshmi Venkatesan and published by . This book was released on 1996 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition written by T. J. Donahue and published by . This book was released on 1985* with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low pressure Chemical Vapor Deposition by Thermolysis of Disilane for Low temperature Fabrication of Pn Junction Solar Cells written by Daniel D. Pates and published by . This book was released on 2006 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: A low-pressure chemical vapor deposition (LPCVD) reactor was built in order to implement a low-temperature process to deposit thin-films of silicon and fabricate pn junction photovoltaic devices using disilane as the source gas. This work represents the first reported work on using disilane for fabrication of photovoltaic devices. Films doped with diborane showed high growth rates of approximately 45-150 Å/min for temperatures ranging from 450 to 550 °C. Undoped films were grown and found to have significantly lower growth rates and were not practical at temperatures less than 500 °C. The films were completely amorphous for growth temperatures of less than 500 °C, and crystallinity increased sharply above 500 °C. The optical properties of the films exhibited low optical bandgaps of approximately 1.4-1.1 eV. The conductivity of the doped films was found to be on the order of 10−3 S/cm. Devices were fabricated by depositing p-type layers on n-type crystalline silicon substrates to form pn junctions. Diodes and pn junction photovoltaic devices were fabricated, exhibiting modest but promising performance, and were limited by parasitic series resistance. This research represents the first reported work on fabricating pn junction photovoltaic devices in a low-temperature LPCVD process using disilane, and serves as a solid foundation for future work to improve the process and fabricate novel device structures.
Download or read book Low Temperature Silicon Epitaxy by Low Pressure Chemical Vapor Deposition with and Without Plasma Enhancement written by Wayne Robert Burger and published by . This book was released on 1984 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Silicon Epitaxy Using Low Pressure Chemical Vapor Deposition with and Without Plasma Enhancement written by Thomas Joseph Donahue and published by . This book was released on 1984 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:
