Download or read book Low frequency Noise reliability Correlation and Noise Power Characteristics of GaAs HBTs and High speed Integrated Circuits written by Saeed Mohammadi and published by . This book was released on 2000 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Download or read book Noise in Devices and Circuits written by and published by . This book was released on 2003 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise in High Frequency Circuits and Oscillators written by Burkhard Schiek and published by John Wiley & Sons. This book was released on 2006-07-14 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: A classroom-tested book addressing key issues of electrical noise This book examines noise phenomena in linear and nonlinear high-frequency circuits from both qualitative and quantitative perspectives. The authors explore important noise mechanisms using equivalent sources and analytical and numerical methods. Readers learn how to manage electrical noise to improve the sensitivity and resolution of communication, navigation, measurement, and other electronic systems. Noise in High-Frequency Circuits and Oscillators has its origins in a university course taught by the authors. As a result, it is thoroughly classroom-tested and carefully structured to facilitate learning. Readers are given a solid foundation in the basics that allows them to proceed to more advanced and sophisticated themes such as computer-aided noise simulation of high-frequency circuits. Following a discussion of mathematical and system-oriented fundamentals, the book covers: * Noise of linear one- and two-ports * Measurement of noise parameters * Noise of diodes and transistors * Parametric circuits * Noise in nonlinear circuits * Noise in oscillators * Quantization noise Each chapter contains a set of numerical and analytical problems that enable readers to apply their newfound knowledge to real-world problems. Solutions are provided in the appendices. With their many years of classroom experience, the authors have designed a book that is ideal for graduate students in engineering and physics. It also addresses key issues and points to solutions for engineers working in the burgeoning satellite and wireless communications industries.
Download or read book High speed Electronics and Device Scaling written by Lester F. Eastman and published by . This book was released on 1990 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability Driven Experimental and Theoretical Study of Low Frequency Noise Characteristics of AlGaN GaN HFETs written by Farzin Manouchehri and published by . This book was released on 2014 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology, which is the most mainstream semiconductor technology, poses serious limitations on fulfilling the market demands in high-frequency and high-power applications. In response to these limitations, wide bandgap III-nitride devices, including AlxGa1-xN/GaN heterojunction field effect transistors (HFETs), were introduced at about two decades ago to satisfy these rapidly growing market demands for high-power/high-frequency amplifiers and high-voltage/high-temperature switches. The most appealing features of III-nitride technologies, and particularly AlxGa1-xN/GaN HFETs, in these applications, are the polarization-induced high sheet-carrier-concentration, high breakdown-voltage, high electron saturation-velocity, and high maximum operating temperature. Therefore, the development of enhancement-mode AlGaN/GaN HFETs is one of the most important endeavours in the past two decades. Low-frequency noise (LFN) spectroscopy, empowered by a proper physics-based model, is received as a capable tool for reliability studies. As a result, devising a physics-based LFN model for AlGaN/GaN HFETs can be capable of not only evaluating the alternative techniques proposed for realization of enhancement-mode AlGaN/GaN HFETs, but also more importantly forecasting the reliability, and noise performance of these devices. In this dissertation, for the first time, a physics-based model for the low-frequency drain noise-current of AlGaN/GaN HFETs is proposed. The proposed model, through including the thermally-activated and quantum tunneling processes of trapping/de-trapping of electrons of channel into and out of the trap-sites located both in the barrier- and buffer-layer of these HFETs, provides a descriptive picture for the LFN behavior of these devices. This work also aims to experimentally investigate the low-frequency noise-current characteristics of both conventional and newly-proposed devices (i.e., fin-, and island-isolated AlGaN/GaN HFETs) at various temperatures (i.e., 150, 300, and 450 K) and bias points in order to address the possible difficulties in performance of these devices. Matching of the trends proposed by the physics-based model to the experimentally recorded LFN spectra of AlGaN/GaN HFETs designed according to a newly-proposed technological variant for positive-shifting the threshold-voltage, confirms the accuracy and predicting power of the proposed model. The insights gained from this model on the latter group of devices provide evidence for the challenges of the aforementioned technological variants, and as a result offer assistance in proposing remedies for those challenges. In formulating the LFN model, a massive discrepancy between the predictions of the existing analytical relationships used by others in evaluating the subband energy levels of AlGaN/GaN HFETs and the realities of the polarization-induced electron concentration of these HFETs was spotted. Careful evaluation of the polarization properties of these heterostructures unmasked the inaccuracy of the assumption of zero penetration of the electron wave into both the AlGaN barrier-layer and the GaN buffer-layer as the culprit in this discrepancy. In response to this observation, a model based on the variational-method for calculating the first and second subband energy levels of AlGaN/GaN HFETs is developed. On the basis of this model, more accurate analytical frameworks for calculating these subband energy levels in AlGaN/GaN HFETs for a variety of barrier thicknesses and Al mole-fractions in the barrier-layer are proposed.
Download or read book High Speed High Power GaInP GaAs HBTs and Their Application to Microwave Monolithic Integrated Circuits MMICS written by Jae Woo Park and published by . This book was released on 2000 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study to Improve the Low Frequency Noise Characteristics of Hg Cd Te Detectors written by and published by . This book was released on 1973 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Frequency Noise in GaAs Devices written by Andrzej Peczalski and published by . This book was released on 1982 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low frequency Noise Sources in III V Semiconductor Heterostructures written by Susie Tzeng and published by . This book was released on 2004 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Speed GaAs Device and Integrated Circuit Modelling and Simulation written by Tzu-Hung Chen and published by . This book was released on 1984 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Frequency Noise Characterization System of Advanced Electronics Devices written by and published by . This book was released on 2002 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: To date, a rising need for high-speed low-noise electronic devices is observed for a wide variety of applications, including wireless or fiber communications. Low frequency noise poses a lower limit on the signal level in broadband circuits. Noise sources are related to various kinds of materials imperfections such as point or line defects, but also to interface interface defects or defects at contacts. As device dimensions decrease, the noise introduced by trapping-detrapping of carriers at deep defects becomes increasingly important. Therefore, the analysis of low frequency electrical noise can be a useful tool not only for the qualification of device performance, but also for the characterization of noise-generating deep level defects in semiconductor materials. The advantages of this technique include the possibility of measuring fully processed device structures and the direct relevance of the measured defect characteristics to device performance Reduction of the noise level frequently requires the correct identification of noise sources. However, difficulties can arise in the interpretation of often-indistinct noise spectrum features.
Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Download or read book Japanese Technical Periodical Index written by and published by . This book was released on 1987 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Japanese Technical Abstracts written by and published by . This book was released on 1986 with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt:
