Download or read book Low frequency Noise Characterization Evaluation and Modeling of Advanced Si and SiGe based CMOS Transistors written by Martin von Haartman and published by . This book was released on 2006 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin von Haartman and published by Springer. This book was released on 2009-09-03 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Download or read book Low Frequency Noise in Advanced CMOS Technology written by Chia-Yu Chen and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The main topic of this thesis is to investigate the CMOS scaling impacts on low-frequency noise properties. Such effects come from size (channel length/width) scaling, adoption of advanced doping profiles (halo pocket implantation), incorporation of alternative gate oxide (high-[Kappa]) and channel materials (SiGe). Device-level simulation capabilities have been developed to investigate low-frequency noise behavior. The numerical model is based on the impedance field method; it accounts for a trap-induced carrier number fluctuation and a Hooge mobility fluctuation. Simulations based on such models have been conducted for high-[Kappa], SiGe and small gate area transistors, and the results have been correlated with experimental data, which reveals the important role of the CMOS scaling in the low-frequency noise behavior. In the study of high-[Kappa] gate dielectric it is found that carrier number fluctuation becomes the dominant noise source and the non-uniform trap energy distribution is critical to explain low frequency noise behavior. The negative impact of substrate halo doping on the low frequency noise is also studied quantitatively. Low frequency noise characteristics of Si/SiGe/Si hetero-channel MOSFETs (SiGe MOSFETs) are discussed; the study has been obtained in terms of the noise level dependence on gate bias, drain currents, and body bias, revealing the important role of the dual channels in the low-frequency noise behavior of Si/SiGe/Si hetero-channel devices. Low frequency noise characteristics in small gate area MOSFETs are studied in detail. Due to the ever decreasing gate area, the number of charge carriers in a MOSFET channel is continually going down, and single-electron low frequency noise phenomena (random telegraph noise, RTN) becomes visible, which is quite different from 1/f noise in standard MOSFETs. It is found that random telegraph noise is directly linked to Positive Bias Temperature Instability (PBTI): PBTI and RTN originate from the same physical process, charge trapping in the high-[Kappa] dielectric. The correlation between Id- and Ig-RTN is clearly observed. Ig-RTN is directly related to physical trapping or de-trapping and the Id-RTN reflects sensitivity to charge trapping as determined by gm. This dissertation has explored advanced TCAD simulations to overcome obstacles in low frequency noise and explained a comprehensive view and the underlying physics for low frequency noise in advanced CMOS technology.

Download or read book Industry Standard FDSOI Compact Model BSIM IMG for IC Design written by Chenming Hu and published by Woodhead Publishing. This book was released on 2019-05-21 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. - Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model - Explains the complex operation of the FDSOI device and its use of two independent control inputs - Addresses the parameter extraction challenges for those using this model

Download or read book Low Frequency Noise as a Characterization and Reliability Tool for the Evaluation of Advanced MOSFETS written by Paul Lim and published by . This book was released on 2009 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Strain Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Download or read book Modeling and Characterization of Flicker Noise in CMOS Transistors written by Jimmin Chang and published by . This book was released on 1994 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Charge Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

Download or read book Advanced Phase lock Techniques written by James A. Crawford and published by Artech House Publishers. This book was released on 2008 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unified approach to phase-lock tecnology, spanning large to small signal-to-noise ratio applications

Download or read book Noise Analysis in CMOS Image Sensors written by Hui Tian and published by . This book was released on 2000 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Systematic Analysis of the Small signal and Broadband Noise Performance of Highly Scaled Silicon based Field effect Transistors written by Sunitha Venkataraman and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this work is to provide a comprehensive analysis of the small-signal and broadband noise performance of highly scaled silicon-based field-effect transistors (FETs), and develop high-frequency noise models for robust radio frequency (RF) circuit design. An analytical RF noise model is developed and implemented for scaled Si-CMOS devices, using a direct extraction procedure based on the linear two-port noise theory. This research also focuses on investigating the applicability of modern CMOS technologies for extreme environment electronics. A thorough analysis of the DC, small-signal AC, and broadband noise performance of 0.18 um and 130 nm Si-CMOS devices operating at cryogenic temperatures is presented. The room temperature RF noise model is extended to model the high-frequency noise performance of scaled MOSFETs at temperatures down to 77 K and 10 K. Significant performance enhancement at cryogenic temperatures is demonstrated, indicating the suitability of scaled CMOS technologies for low temperature electronics. The hot-carrier reliability of MOSFETs at cryogenic temperatures is investigated and the worst-case gate voltage stress condition is determined. The degradation due to hot-carrier-induced interface-state creation is identified as the dominant degradation mechanism at room temperature down to 77 K. The effect of high-energy proton radiation on the DC, AC, and RF noise performance of 130 nm CMOS devices is studied. The performance degradation is investigated up to an equivalent total dose of 1 Mrad, which represents the worst case condition for many earth-orbiting and planetary missions. The geometric scaling of MOSFETs has been augmented by the introduction of novel FET designs, such as the Si/SiGe MODFETs. A comprehensive characterization and modeling of the small-signal and high-frequency noise performance of highly scaled Si/SiGe n-MODFETs is presented. The effect of gate shot noise is incorporated in the broadband noise model. SiGe MODFETs offer the potential for high-speed and low-voltage operation at high frequencies and hence are attractive devices for future RF and mixed-signal applications. This work advances the state-of-the-art in the understanding and analysis of the RF performance of highly scaled Si-CMOS devices as well as emerging technologies, such as Si/SiGe MODFETs. The key contribution of this dissertation is to provide a robust framework for the systematic characterization, analysis and modeling of the small-signal and RF noise performance of scaled Si-MOSFETs and Si/SiGe MODFETs both for mainstream and extreme-environment applications.

Download or read book Low Frequency Noise Characterization of Si SiO2 Interface Properties in Strained MOSFETs written by 郭正聞 and published by . This book was released on 2011 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Frequency Noise in Sub 100nm Silicon Structures written by Theresa Anne Kramer and published by . This book was released on 2003 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Frequency Noise Characterization System of Advanced Electronics Devices written by and published by . This book was released on 2002 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: To date, a rising need for high-speed low-noise electronic devices is observed for a wide variety of applications, including wireless or fiber communications. Low frequency noise poses a lower limit on the signal level in broadband circuits. Noise sources are related to various kinds of materials imperfections such as point or line defects, but also to interface interface defects or defects at contacts. As device dimensions decrease, the noise introduced by trapping-detrapping of carriers at deep defects becomes increasingly important. Therefore, the analysis of low frequency electrical noise can be a useful tool not only for the qualification of device performance, but also for the characterization of noise-generating deep level defects in semiconductor materials. The advantages of this technique include the possibility of measuring fully processed device structures and the direct relevance of the measured defect characteristics to device performance Reduction of the noise level frequently requires the correct identification of noise sources. However, difficulties can arise in the interpretation of often-indistinct noise spectrum features.

Download or read book Modeling and Analysis of High Frequency Noise in BiCMOS Transistors written by Peng Cheng and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The importance of high frequency noise performance is increasing in advanced bipolar and complementary metal-oxide semiconductor (BiCMOS) technologies because of the high demands of radio frequency (RF) and mixed-signal integrated circuits used in the 5G communication, automatic-driving sensors and internet of things (IOT) applications. While the characterization and modeling of high frequency noise of BiCMOS transistors have been a topic for many years, some important issues have not been clarified. For example, the noise correlation is not well predicted for bipolar devices, the excess noise factor is not well understood for MOSFET devices and the temperature dependence of high frequency noise in BiCMOS devices is not well studied. Focused on these issues, this research establishes the approach to extract the noise transit time from the high current compact model (HICUM), demonstrates an efficient methodology for high frequency noise prediction for silicon-germanium heterojunction bipolar transistors (SiGe HBTs) and validates the prediction methodology over size, bias and temperature. One of the issues of high frequency noise modeling of bipolar transistors is the noise correlation effect. This research explores the physical origin of high frequency noise correlation, studies the noise model of SiGe HBTs and creates an approach to extract the noise transit time from the HICUM compact model. The extracted noise transit time is validated by the tuner-based noise measurement results of sample SiGe HBTs by comparing the four noise parameters between the calculated and measured data over transistor size, bias and temperature. The results show that the noise transit time can be independent of frequency but dependent on bias and temperature. Furthermore, a complete high frequency noise prediction system is established. Based on the extraction methodology of the noise transit time from the HICUM model, this dissertation demonstrates a low-cost and time-friendly methodology to predict the full high frequency noise properties of the bipolar devices directly from the S-parameter measurement, DC measurement and the parameters from the HICUM model without the tuner-based noise measurement. Compared with the conventional tuner-based noise measurement, this methodology can save the measurement time as well as achieve a good accuracy. For MOSFET devices, the importance of excess noise factor is increasing with the transistor size scaling down to sub-100nm for high frequency noise modeling, but it has not been well studied so far. This research analyzes the excess noise factor based on the device physics and characterization results, investigates the noise sources contribution and models the high frequency noise based on Y-parameter methodology.

Download or read book Low Frequency Noise Characterization of AlGaN GaN High Electron Mobility Transistors written by Ningjiao Zhang and published by . This book was released on 2013 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Low frequency noise performance is an important aspect of semiconductor transistors evaluation. It is also a macroscopical method of defect spectroscopy. Characterization of low frequency noise performance at different bias conditions can help to locate defects of the devices together with other materials and device characterization techniques.