Download or read book Low Frequency Noise and Quantum Transport in Deep submicron N MOSFET s written by Zhongming Shi and published by . This book was released on 1992 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Frequency Noise in Deep Submicron MOSFETs written by Fang Wang and published by . This book was released on 2000 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Of Semiconductors The Proceedings Of The Xxi International Conference In 2 Volumes written by Ping Jiang and published by World Scientific. This book was released on 1993-03-31 with total page 2151 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Download or read book Random Dopants and Low frequency Noise Reduction in Deep submicron MOSFET Technology written by Drake A. Miller and published by . This book was released on 2011 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: The future of mixed-signal, memory, and microprocessor technologies are dependent on ever increasing analog and digital integration, higher cell densities, and demand for more processing power. As a result MOSFET device dimensions continue to shrink to meet these demands. A side effect of device scaling is increased variability at each technological node which affects both analog and digital circuits in terms of decreased yields, performance, and noise margins. At deep sub-micron dimensions the Low-Frequency Noise (LFN) of the MOSFET is dominated by the influence of one or more active traps capturing and emitting charge to and from the oxide creating wide variations in the LFN from otherwise identical devices. Additionally, the random position of dopant atoms near the Si/SiO2 interface create a potential landscape that induces regions of high and low conductivity which in turn causes a situation where the current is no longer uniform in the device, but consist of individual current paths or percolating currents. The coupling between the random variation of the percolation current and active traps in the oxide are responsible for the large spread (> 3 orders of magnitude) in the noise characteristics observed in deep sub-micron MOSFET devices. The compact LFN model presented here accounts for the action of traps on percolating currents in deep-sub-micron and nano-scale MOSFETs. Two schemes for reduction of LFN are studied based on the smoothing of the surface potential. First, noise reduction is demonstrated with measurements on sub-micron MOSFETs with forward substrate bias. Secondly, the model is further verified through the reduction of noise by the removal of dopant atoms near the Si/SiO2 interface of the device. Both schemes result in a lower noise and threshold device. Finally, these experimental findings are applied to a 2.2um 2 MP CMOS image sensor. From the temporal noise measurements on threshold implant process splits, the image sensor noise has been significantly reduced as a direct result of fundamentals described by this MOSFET LFN model and further proves the validity of these findings.
Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Download or read book Solid State Device Research 91 written by M. Ilegems and published by Elsevier Publishing Company. This book was released on 1991 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ESSDERC conference constitutes the major European forum for discussing research and development work on semiconductor devices and technology. The 141 papers, including 17 invited papers, review subjects of recent interest or report on major coordinated research programs in Europe and Japan. The main focus of the contributions is on traditional silicon-based devices and technology, oriented towards integrated circuits. Papers are also included on micro- and optoelectronic devices based on 3-5 compound semiconductors, and the design and fabrication of semiconductor-based microsensors and microactuators. The volume will be an indispensable reference source to researchers from different but related areas, in promoting the exchange of experience and in emphasizing the unifying aspects of the wide interdisciplinary area of semiconductor science and technology.
Download or read book Experiments and Modeling of High frequency Noise in Deep Submicron MOSFETs written by Saurabh Sirohi and published by . This book was released on 2005 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 998 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Japanese Technical Periodical Index written by and published by . This book was released on 1987 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1987 with total page 1124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book IEICE Transactions on Electronics written by and published by . This book was released on 1999 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
