Download or read book Ion Implantation in Cadmium Telluride written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1976 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: Results of investigations conducted on cadmium telluride (CdTe) samples are presented in this two-part document. Part 1 describes the effects of ion implantation doping in CdTe using transmission electron microscopy (TEM) and electrical evaluation as investigative tools. Part 2 describes the investigation of microstructural defects in CdTe and interfacial reactions at the Pt/CdTe contact and subsequent correlations with electrical measurements on CdTe room-temperature gamma ray detectors, and possible solar cell uses. This study has shown that the previous experimental data obtained on arsenic and krypton-implanted samples can be explained by the radiation-induced formation of electrically active defects rather than by substitutional impurity doping. A model has been proposed entailing the liberation of cadmium vacancy acceptors from radiation-induced loops. Using column I dopants (potassium, sodium, and cesium) to fill available cadmium cacancy sites, high doping efficiencies and true chemical doping have been obtained in ion-implanted CdTe. Investigations of CdTe radiation detector materials have shown a direct correlation between defect content, excess leakage currents and polarization on fabricated devices.

Download or read book Ion Implantation Into Mercury Cadmium Telluride Through Dielectric Encapsulants written by Neil Fredric Deutscher and published by . This book was released on 1989 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation in Cadmium Telluride written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1976 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: Results of investigations conducted on cadmium telluride (CdTe) samples are presented in this two-part document. Part 1 describes the effects of ion implantation doping in CdTe using transmission electron microscopy (TEM) and electrical evaluation as investigative tools. Part 2 describes the investigation of microstructural defects in CdTe and interfacial reactions at the Pt/CdTe contact and subsequent correlations with electrical measurements on CdTe room-temperature gamma ray detectors, and possible solar cell uses. This study has shown that the previous experimental data obtained on arsenic and krypton-implanted samples can be explained by the radiation-induced formation of electrically active defects rather than by substitutional impurity doping. A model has been proposed entailing the liberation of cadmium vacancy acceptors from radiation-induced loops. Using column I dopants (potassium, sodium, and cesium) to fill available cadmium cacancy sites, high doping efficiencies and true chemical doping have been obtained in ion-implanted CdTe. Investigations of CdTe radiation detector materials have shown a direct correlation between defect content, excess leakage currents and polarization on fabricated devices.

Download or read book Mercury Loss Annealing and Ion Implantation in Mercury Cadmium Telluride written by Kathryn Conway Dimiduk and published by . This book was released on 1983 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development of Direct Ion Implantation Processes and Characterization Techniques for Mercury Cadmium Telluride Epilayers written by Tsong-Ming Kao and published by . This book was released on 1987 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Effects in CdTe written by Muren Chu and published by . This book was released on 1978 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.

Download or read book Photoreflectance Study of Boron Ion Implanted 100 Cadmium Telluride written by P. M. Amirtharaj and published by . This book was released on 1988 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have studied ion-implanted (100) cadmium telluride using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10 to the 16 power/sq. cm, and the annealing was accomplished at 500C under vacuum. The spectral measurements were made at 77 K near the E sub 0 and E sub 1 critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion-damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated. Keywords: Ion implantation effects in semiconductors; II-VI Semiconductor optical properties. (aw).

Download or read book Ion Implantation in Semiconductors written by Ingolf Ruge and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.

Download or read book Cathodoluminescence of Ion Implanted Laser Annealed Cadmium Telluride written by D. Wood and published by . This book was released on 1983 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implanted Mercury Cadmium Telluride Epilayers written by Lissa King Magel and published by . This book was released on 1989 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation and Flash Annealing in CdTe written by Kristin M. James and published by . This book was released on 1984 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of the Junction Formation in the Ion Implanted Mercury Cadmium Telluride written by Byron Lovell Williams and published by . This book was released on 1998 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mercury Cadmium Telluride written by Peter Capper and published by John Wiley & Sons. This book was released on 2011-06-20 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growth Liquid phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors

Download or read book Mercury Cadmium Telluride Imagers written by A.C. Onshage and published by Elsevier. This book was released on 1997-06-18 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: In two parts, this book describes the evolution of mercury cadmium telluride (HgCdTe) imager structures based upon published patents and patent applications. The first part covers monolithic arrays, and the second part describes hybrid arrays. Each part has 5 chapters, with each document placed in chronological order, with the documents with the earliest priority placed first. Focus has been directed at the steps of manufacturing and structures of imagers.There is an index at the end of the book containing the patent number, the name of the applicant and the date of publication of each cited document.This monograph will serve as a useful summary of the patents and patent applications in the field of mercury cadmium telluride imagers.

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Direct Implantation Process Development and Characterization in Advanced Hg 1 x Cd x Te EPI Layers written by Thomas W. Sigmon and published by . This book was released on 1989 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mercury cadmium telluride (MCT) has been extensively studied over the past thirty years, primarily as an optical detector material for the mid and far infrared. Researchers have also shown interest in other potential uses for the material such as optical communication devices, tunable lasers, and nonlinear optical devices. The properties that make the alloy semiconductor MCT particularly suited for infrared detection an energy gap that can be adjusted from a value of -0.3 electron-volt for the semimetal mercury telluride to electron-volt for cadmium telluride and a direct energy gap over all values of composition. The direct energy gap gives the material a large absorption coefficient which means that the detector needs to be only several microns thick to absorb all the radiation of interest. It thus lends itself readily production-line processing utilizing standard photolithographic techniques. Additional favorable properties include a very high electron mobility, a high electron-to-hole mobility ratio, and a fairly low dielectric constant. Keywords:Hg1-xCdxTe; Ion implantation; Rapid thermal annealing; Rapid thermal annealing; Ion channeling; Rutherford backscattering; Spectrometry; Process modeling; Lasers; Semiconductors. (JG).