Download or read book Ion Beam Induced Damage Processes in Silicon written by Richard David Goldberg and published by . This book was released on 1995 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Study of the Focused Ion Beam Induced Damage in Semiconductor Materials written by Sergey Rubanov and published by . This book was released on 2002 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Beam Processes in Advanced Electronic Materials and Device Technology Volume 45 written by B. R. Appleton and published by . This book was released on 1985-08-30 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Ion Irradiation Induced Damage in Nuclear Materials written by Diana Bachiller Perea and published by Springer. This book was released on 2018-09-26 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis investigates the behavior of two candidate materials (a-SiO2 and MgO) for applications in fusion (e.g., the International Thermonuclear Experimental Reactor ITER) and Generation IV fission reactors. Both parts of the thesis – the development of the ionoluminescence technique and the study of the ion-irradiation effects on both materials – are highly relevant for the fields of the ion-beam analysis techniques and irradiation damage in materials. The research presented determines the microstructural changes at different length scales in these materials under ion irradiation. In particular, it studies the effect of the irradiation temperature using several advanced characterization techniques. It also provides much-needed insights into the use of these materials at elevated temperatures. Further, it discusses the development of the ion-beam-induced luminescence technique in different research facilities around the globe, a powerful in situ spectroscopic characterization method that until now was little known. Thanks to its relevance, rigorosity and quality, this thesis has received twoprestigious awards in Spain and France.
Download or read book Ion Beam Modification of Solids written by Werner Wesch and published by Springer. This book was released on 2016-07-14 with total page 547 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modifications of solids. Ion beams are widely used to modify the physical properties of materials. A complete theory of ion stopping in matter and the calculation of the energy loss due to nuclear and electronic interactions are presented including the effect of ion channeling. To explain structural modifications due to high electronic excitations, different concepts are presented with special emphasis on the thermal spike model. Furthermore, general concepts of damage evolution as a function of ion mass, ion fluence, ion flux and temperature are described in detail and their limits and applicability are discussed. The effect of nuclear and electronic energy loss on structural modifications of solids such as damage formation, phase transitions and amorphization is reviewed for insulators and semiconductors. Finally some selected applications of ion beams are given.
Download or read book Sub micron Resolution of Localized Ion Beam Induced Charge Reduction in Silicon Detectors Damaged by Heavy Ions written by and published by . This book was released on 2015 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 [mu]m2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.
Download or read book Ion Solid Interactions written by Michael Nastasi and published by Cambridge University Press. This book was released on 1996-03-29 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive guide to an important materials science technique for students and researchers.
Download or read book Ion Beam Processing of Materials and Deposition Processes of Protective Coatings written by P.L.F. Hemment and published by Newnes. This book was released on 2012-12-02 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation.Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.
Download or read book Introduction to Focused Ion Beams written by Lucille A. Giannuzzi and published by Springer Science & Business Media. This book was released on 2006-05-18 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Focused Ion Beams is geared towards techniques and applications. This is the only text that discusses and presents the theory directly related to applications and the only one that discusses the vast applications and techniques used in FIBs and dual platform instruments.
Download or read book Depth Resolved Investigation of Ion Beam Induced Pattern Formation on Silicon Using X ray Methods written by Behnam Khanbabaee Patekhour and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book New Trends in Ion Beam Processing of Materials and Beam Induced Nanometric Phenomena written by Francesco Priolo and published by Elsevier Science Serials. This book was released on 1997 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: Part I of this book is dedicated to the proceedings of symposium I of the EMRS 1996 Spring Meeting. This Symposium on "New Trends in Ion Beam Processing of Materials" was held in Strasbourg (France) from the 4th to the 7th of June 1996. Ion- beam processing represents a particularly powerful tool to modify and synthesise materials such as semiconductors, metals, dielectrics, and ceramics, In particular, the continuous development of the semiconductor industry, with the consequent shrinkage of device dimensions, is placing severe constraints on ion-beam processing with demands for keV and meV energy beams, high doses, and unprecedented control over contamination, beam purity, and divergence. These requirements are posing new challenges to the ion-beam community, ranging from fundamental processes (such as defect generation, defect-defect interactions, phase transitions) to engineering (such as process control and novel equipment). The aim of this Symposium was to provide an international forum for the presentation and discussion of new work in the field of ion-beam processing. More than a hundred papers were presented by scientists from all over the world. particular emphasis was given to new trends in ion-beam processing of semiconductors and to the current challenges faced by microelectronic device manufacturing. The fields of transient- enhanced diffusion, gettering, optoelectronic applications, group IV hetero epitaxy, damage, annealing, and synthesis were treated in detail. The interaction between the semiconductor and other communities is important for the development of new concepts and presentations in the field of metals, insulators, and new techniques (such as plasma-immersion ion implantation) were extremely interesting. Part II is dedicated to the proceedings of symposium K. This symposium has focused on modifications of the structure and properties of materials which are induced by several kinds of irradiations: on the one hand high energy deposited in the electrons which relax their energy to the lattice (fs lasers, heavy ions in the GeV energy range, cluster beams in the MeV range) and on the other hand energy deposited directly on the lattice atoms (heavy ions and cluster beams in the keV energy range). The idea was to emphasize the link between the material modifications on a nanometric scale and the energy input on the fs time scale from both the experimental and theoretical point of view. To reach these goals our attention was focused on single event effects: single fs laser shots, single ion and cluster tracks (low and high energy).
Download or read book In situ Observations of the Development of Heavy ion Damage in Semiconductors written by and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In-situ observations on ion-beam induced amorphisation of GaAs, GaP and Si are reported. Direct-impact amorphisation was found to occur in GaAs irradiated with 100-keV Xe ions to low doses at low temperature (approx. 40K) in contrast to previous room temperature irradiations. In GaP and in silicon, where heavy projectiles do cause direct impact amorphisation at room temperature, the evolution of the damage structure with ion-dose was studied. The defect yield both in GaP irradiated with 100-keV Kr ions and in Si irradiated with 100-keV Xe+ ions was found to decrease monotonically with increasing dose over the dose range 1015 to 1017 ions m−2.
Download or read book Electrical Atomic Force Microscopy for Nanoelectronics written by Umberto Celano and published by Springer. This book was released on 2019-08-01 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer control of the many parameters essential for their fabrication. Through the years, this created a strong alliance between microscopy techniques and IC manufacturing. This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development. The operation principles of many techniques are introduced, and the associated metrology challenges described. Blending the expertise of industrial specialists and academic researchers, the chapters are dedicated to various AFM methods and their impact on the development of emerging nanoelectronic devices. The goal is to introduce the major electrical AFM methods, following the journey that has seen our lives changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.
Download or read book Characterization of Focused Ion Beam Induced Processes written by Anil Gandhi and published by . This book was released on 1991 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Laser and Ion Beam Modification of Materials written by I. Yamada and published by Elsevier. This book was released on 2013-10-22 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser and Ion Beam Modification of Materials is a compilation of materials from the proceedings of the symposium U: Material Synthesis and Modification by Ion beams and Laser Beams. This collection discusses the founding of the KANSAI Science City in Japan, and the structures, equipment, and research projects of two institutions are discussed pertaining to eV-MeV ion beams. A description of ion beams as used in materials research and in manufacturing processes, along with trends in ion implantation technology in semiconductors, is discussed. Research into ion beams by China and its industrial uses in non-semiconductor area is noted. For industrial applications, developing technology in terms of high speed, large surface modifications and use of high doses is important. Thus, the development of different ion beam approaches is examined. Industrial applications of ion and laser processing are discussed as cluster beams are used in solid state physics and chemistry. Mention is made on a high power discharge pumped solid state physics (ArF) excimer laser as a potential light source for better material processing. Under ion beam material processing is nanofabrication using focused ion beams, important for research work in mesoscopic systems. Progress in the use of ion-beam mixing using kinetic energy of ion-beams to mingle with pre-deposited surface layers of substrate materials has shown promise. Advanced materials researchers and scientists, as well as academicians in the field of nuclear physics, will find this collection helpful.
Download or read book Investigation of Reactive Ion Etching Induced Damage in Silicon Trench Etching written by Ronald Paul Reade and published by . This book was released on 1988 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
