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Book Investigations of RF Sputtered AlN Thin Films with Different Orientations and Its Applications on Resistive Random Access Memories

Download or read book Investigations of RF Sputtered AlN Thin Films with Different Orientations and Its Applications on Resistive Random Access Memories written by 劉惠瑜 and published by . This book was released on 2017 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Investigations on RF Sputter Deposited SiCN Thin Films for MEMS Applications

Download or read book Investigations on RF Sputter Deposited SiCN Thin Films for MEMS Applications written by Ravi M. Todi and published by . This book was released on 2005 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nano-indentation studies indicated that the hardness and the reduced modulus of the film are sensitive to the N2/Ar ratio of gas flow during sputtering. AFM studies revealed that the films become smoother as the N2/Ar ratio is increased. XPS data indicated the existence of C-N phases in the as-deposited films. The study of oxidation kinetics of RF sputter deposited SiCN thin films, using XPS, suggest that N2 co-sputtering helps to suppress the formation of a surface oxide, by allowing un-bonded Si to bond with N and C inside the vacuum chamber as opposed to bonding with O in atmosphere.

Book Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films

Download or read book Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films written by and published by . This book was released on 1999 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Deposition parameters were found to have a marked effect on piezoelectric response of reactive radio frequency (RF) sputtered AlN thin films. The authors observed peizoelectric response values ranging from -3.5 to +4.2 pm/V for 1 [mu]m thick AlN films deposited onto Ti/Ru electrode stacks. An investigation of the effects of deposition parameters, in particular the nature of the Ru/AlN interface, was conducted. The lag time between deposition of adjacent thin film layers appeared to have the greatest affect on the value of the piezoelectric response. This suggests that chemical reaction occurring on the Ru thin film surface is responsible for changing an important thin film property such as dipole orientation within the overlying AlN thin film.

Book Investigation on Electrical Properties of RF Sputtered Deposited BCN Thin Films

Download or read book Investigation on Electrical Properties of RF Sputtered Deposited BCN Thin Films written by Adithya Prakash and published by . This book was released on 2013 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance. Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.

Book Investigation of ZTO Thin Film by RF Co sputter and It s Application

Download or read book Investigation of ZTO Thin Film by RF Co sputter and It s Application written by 郭栢瑞 and published by . This book was released on 2013 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Effect of RF Sputtering Deposition Parameters on the Functional Properties of Chrom Ium Oxide Thin Films

Download or read book The Effect of RF Sputtering Deposition Parameters on the Functional Properties of Chrom Ium Oxide Thin Films written by John Gerald Kavanagh and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: An investigation was made into the effect of rf magnetron deposition parameters on the resulting properties of chromium oxide thin films. The films were sputtered in an argon/ oxygen plasma environment with the main deposition parameters being the argon and oxygen flow rate, chamber pressure, deposition-time and the deposition power (forward and back). Tire effect of the sputter deposition regime which is controlled by the sputtering hysteresis phenomenon i.e. the reactive and metallic regimes, are expected to have a significant effect on the properties of the sputtered films and will have to be taken into account. The films were deposited on a range of substrates such as silicon, glass micro-slides and stainless steel 304 and the composition of the mainly amorphous sputtered films was determined through XPS, EDX and XRD. Optical characterisation and determination of optical constants was undertaken by transmission/reflection spectrophotometry, ellipsometry and Raman and FTIR analysis. Two designs of a solar thermal absorber (multilayer interference and tandem absorber) were designed and fabricated based on the optical constants measured by the methods previously stated and their performance analysed. The surface energy was calculated through measurement of the contact angle with three different liquids and the corrosion resistance of the films measured by OCP, linear sweep and EIS analysis in 3.5wt% NaCI solution. The mechanical properties were measured by nanoindentation, from which the hardness and elastic modulus of the samples could be obtained. The electrical properties were measured using a four point probe to calculate the thin film resistivity and the Kelvin probe analysis was used to measure the work function of the samples.

Book Microstructure and Properties of In situ Rf Sputtered YBa2Cu3O   Thin Films for Microwave Applications

Download or read book Microstructure and Properties of In situ Rf Sputtered YBa2Cu3O Thin Films for Microwave Applications written by and published by . This book was released on 1992 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: The residual surface resistance of a number of films of YBa2Cu3O--, prepared by off-axis sputtering onto MgO substrates, has been measured using parallel-plate resonator technique. Deposition conditions were kept constant, apart from the substrate temperature. There is no correlation between surface resistance and other important microscopic parameters, such as T{sub c} and c-axis lattice parameter. There is, however, a trend to higher R{sub s} with increasing volume fraction of in-plane misoriented material, although the correlation is not perfect. Furthermore, we have found that most of the misoriented material is localized at the film substrate interface and therefore is probably not responsible for most of the RF losses. The data suggest that at higher deposition temperatures, there is an increasing tendency for 45°-misoriented material to appear in the films, and it may be that a significant fraction of this material is present closer to the free film surface. STM qualitatively supports this conclusion.

Book STRUCTURE AND ELECTRICAL PROPERTIES OF RF SPUTTER DEPOSITED INDIUM ANTIMON IDE THIN FILMS

Download or read book STRUCTURE AND ELECTRICAL PROPERTIES OF RF SPUTTER DEPOSITED INDIUM ANTIMON IDE THIN FILMS written by and published by . This book was released on 1976 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last few years, sputtering has become a very important industrial technique for depositing thin films. Typical applications include metalization and passivation in the electronics industry, the deposition of complex cermets, glasses, and plastics, and the formation of coatings for corrosion, abrasion, and wear resistance. However, relatively little work has been reported on the growth of compound semiconducting films by sputtering.

Book Preparation and Characterization of Reactive RF Sputtered Nitride Thin Films

Download or read book Preparation and Characterization of Reactive RF Sputtered Nitride Thin Films written by Geok Loo Chen and published by . This book was released on 1999 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Microstructure and Properties of In situ Rf Sputtered YBa Sub 2 Cu Sub 3 O Sub 7 Thin Films for Microwave Applications

Download or read book Microstructure and Properties of In situ Rf Sputtered YBa Sub 2 Cu Sub 3 O Sub 7 Thin Films for Microwave Applications written by and published by . This book was released on 1992 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: The residual surface resistance of a number of films of YBa2Cu3O--, prepared by off-axis sputtering onto MgO substrates, has been measured using parallel-plate resonator technique. Deposition conditions were kept constant, apart from the substrate temperature. There is no correlation between surface resistance and other important microscopic parameters, such as T{sub c} and c-axis lattice parameter. There is, however, a trend to higher R{sub s} with increasing volume fraction of in-plane misoriented material, although the correlation is not perfect. Furthermore, we have found that most of the misoriented material is localized at the film substrate interface and therefore is probably not responsible for most of the RF losses. The data suggest that at higher deposition temperatures, there is an increasing tendency for 45°-misoriented material to appear in the films, and it may be that a significant fraction of this material is present closer to the free film surface. STM qualitatively supports this conclusion.