Download or read book Investigation of III V Semiconductor Heterostructures for Post Si CMOS Applications written by Kunal Bhatnagar and published by . This book was released on 2015 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon complementary metal-oxide-semiconductor (CMOS) technology in the past few decades has been driven by aggressive device scaling to increase performance, reduce cost and lower power consumption. However, as devices are scaled below the 100 nm region, performance gain has become increasingly difficult to obtain by traditional scaling. As we move towards advanced technology nodes, materials innovation and physical architecture are becoming the primary enabler for performance enhancement in CMOS technology rather than scaling. One class of materials that can potentially result in improved electrical performance are III-V semiconductors, which are ideal candidates for replacing the channel in Si CMOS owing to their high electron mobilities and capabilities for band-engineering. This work is aimed towards the growth and characterization of III-V semiconductor heterostructures and their application in post-Si-CMOS devices. The two main components of this study include the integration of III-V compound semiconductors on silicon for tunnel-junction Esaki diodes, and the investigation of carrier transport properties in low-power III-V n-channel FETs under uniaxial strain for advanced III-V CMOS solutions. The integration of III-V compound semiconductors with Si can combine the cost advantage and maturity of the Si technology with the superior performance of III-V materials. We have demonstrated high quality epitaxial growth of GaAs and GaSb on Si (001) wafers through the use of various buffer layers including AlSb and crystalline SrTiO3. These GaSb/Si virtual substrates were used for the fabrication and characterization of InAs/GaSb broken-gap Esaki-tunnel diodes as a possible solution for heterojunction Tunnel-FETs. In addition, the carrier transport properties of InAs 110 channels were evaluated under uniaxial strain for the potential use of strain solutions in III-V CMOS.

Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Download or read book Graphene Ge III V and Emerging Materials for Post CMOS Applications 2 written by P. Srinivasan and published by The Electrochemical Society. This book was released on 2010-04 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions addresses the fundamental material science, characterization, modeling and applications of Graphene, Ge-III-V and Emerging materials designed for alternatives technologies to replace CMOS.

Download or read book Junction Level Heterogeneous Integration of III V Materials with Si CMOS for Novel Asymmetric Field Effect Transistors written by Yoon Jung Chang and published by . This book was released on 2016 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: Driven by Moore's law, semiconductor chips have become faster, denser and cheaper through aggressive dimension scaling. The continued scaling not only led to dramatic performance improvements in digital logic applications but also in mixed-mode and/or communication applications. Moreover, size/weight/power (SWAP) restrictions on all high-performance system components have resulted in multi-functional integration of multiple integrated circuits (ICs)/dies in 3D packages/ICs by various system-level approaches. However, these approaches still possess shortcomings and in order to truly benefit from the most advanced digital technologies, the future high-speed/high power devices for communication applications need to be fully integrated into a single CMOS chip. Due to limitations in Si device performance in high-frequency/power applications as well as expensive III-V compound semiconductor devices with low integration density, heterogeneous integration of compound semiconductor materials/devices with Si CMOS platform has emerged as a viable solution to low-cost high-performance ICs. In this study, we first discuss on channel and drain engineering approaches in the state-of-the-art multiple-gate field-effect transistor to integrate III-V compound semiconductor materials with Si CMOS for improved device performance in mixed-mode and/or communication applications. Then, growth, characterization and electrical analysis on small-area (diameter

Download or read book III V Semiconductor Heterostructures written by Will Z. Cai and published by . This book was released on 2003 with total page 355 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dielectrics in Nanosystems and Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 3 written by Zia Karim and published by The Electrochemical Society. This book was released on 2011-04-25 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

Download or read book Semiconductor Heterostructures written by Zh. I. Alferov and published by . This book was released on 1989 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book III V semiconductor heterostructures physics and devices 2003 editor Will Z Cai written by and published by . This book was released on 2003 with total page 355 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Emerging Materials for Post CMOS Devices Sensing and Applications 8 written by Durgamadhab Misra and published by The Electrochemical Society. This book was released on 2017 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book III V Metal oxide semiconductor Field effect transistors from Planar to 3D written by Fei Xue and published by . This book was released on 2013 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: Si complementary metal-oxide-semiconductor (CMOS) technology has been prospered through continuously scaling of its feature size. As scaling is approaching its physical limitations, new materials and device structures are expected. High electron mobility III-V materials are attractive as alternative channel materials for future post-Si CMOS applications due to their outstanding transport property. High-k dielectrics/metal gate stack was applied to reduced gate leakage current and thus lower the power dissipation. Combining their benefits, great efforts have been devoted to explore III-V/high-k/metal metal-oxide-semiconductor field-effect-transistors (MOSFETs). The main challenges for III-V MOSFETs include interface issues of high-k/III-V, source and drain contact, silicon integration and reliability. A comprehensive study on III-V MOSFETs has been presented here focusing on three areas: 1) III-V/high-k/metal gate stack: material and electrical properties of various high-k dielectrics on III-V substrates have been systematically examined; 2) device architecture: device structures from planar surface channel MOSFETs and buried channel quantum well FETs (QWFETs) to 3D gate-wrapped-around FETs (GWAFETs) and tunneling FETs (TFETs) have been designed and analyzed; 3) fabrication process: process flow has been set up and optimized to build scaled planar and 3D devices with feature size down to 40nm. Potential of high performances have been demonstrated using novel III-V/high-k devices. Effective channel mobility was significantly improved by applying buried channel QWFET structure. Short channel effect control for sub-100nm devices was enhanced by shrinking gate dielectrics, reducing channel thickness and moving from 2D planar to 3D GWAFET structure. InGaAs TFETs have also been developed for ultra-low power application. This research work demonstrates that III-V/high-k/metal MOSFETs with superior device performances are promising candidates for future ultimately scaled logic devices.

Download or read book Optoelectronic III V Heterostructures on SI Substrates written by and published by . This book was released on 1992 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: The results of a three-year program to investigate the epitaxial growth of the III-V semiconductors, particularly the InGaAsP/InP materials system, on Si substrates is presented. The heterostructures were grown by gas- source molecular beam epitaxy (GSMBE) and were designed for applications in optoelectronics. With regard to growth of InP and InGaAsP alloys on Si, the research program was successful in reducing misfit dislocations and stacking faults resulting from the 8% lattice mismatch between InP and Si. A strained layer superlattice of In(x)Ga(1-x)P/In(y)Ga(1-y)P (X not equal Y) was used as a buffer layer. The use of InGaP as buffer layers led to extensive development, in parallel with the InP-on-Si work, of InGaP layers by GSMBE. The Schottky barrier energies for both n-type and p-type materials were measured for the first time for the wide bandgap alloys InGaP and InGaAlP when lattice matched to GaAs.

Download or read book High Quality III V Semiconductor Integration on Si Using Van Der Waals Layered Material Buffer for Photonic Integration Applications written by Yazeed Alaskar and published by . This book was released on 2016 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integration of arsenide-based III-V compound semiconductors on silicon (Si) has been the focus of significant research to integrate light sources on silicon, enabling an integrated optical solution for chip-chip interconnects in future computing systems, and to make cost-effective and efficient multi-junction solar cells on silicon substrates. The primary obstacle to success is the lattice and thermal expansion mismatches between the semiconductor compounds of interest and the silicon substrates. In this thesis, a novel heteroepitaxial growth technique, quasi van der Waals epitaxy, promises the ability to grow high quality As-based semiconductor compounds on silicon using a two-dimensional (2D) layered material as a buffer layer, where the van der Waals force is dominant between the layers, thus reducing the strain arising from lattice and thermal expansion coefficient mismatches. The main body of the thesis is structured in three parts. First, theoretical investigations of quasi van der Waals heteroepitaxial growth of arsenide-based III-V compounds on layered materials, such as graphene, Indium Selenide (InSe), Boron Nitride (h-BN) and Molybdenum Selenide (MoS2), where the surface free energy and adsorption energies of Ga, Al, In and As are calculated using DFT calculations. Second, experimental demonstration of a novel low temperature technique for quasi van der Waals heteroepitaxial growth of arsenide based III-V compounds on graphene using Molecular Beam Epitaxy (MBE) is described. Third, using Indium Selenide (InSe) as a buffer layer due to its relatively high surface free energy and stability at high growth temperatures, a high quality and defect-free InGaAs/GaAs double heterostrucure (DH) is integrated onto a GaAs/ Si structure. The crystal quality of GaAs shows the lowest defect density of GaAs grown directly on Si to date, making it a remarkable step toward obtaining optical emitters on silicon substatres. The optical properties of this heterostructure were characterized using micro-photoluminescence ( -PL), demonstrating room-temperature light emission out of the InGaAs/GaAs heterostructure integrated on thin GaAs on InSe/Si. Planar growth of GaAs thin films on layered materials is a potential route towards heteroepitaxial integration of GaAs on silicon in the developing field of silicon photonics.

Download or read book Heterogeneous Integration of III V and II IV Semiconductor Sheets Onto Silicon Substrate Through Electric Field Assisted Assembly for Device Applications written by Scott Levin and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Market forces are creating a strong need to make value-added enhancements to silicon (Si) complementary metal-oxide semiconductor (CMOS) integrated circuit (IC) technology. One approach to achieve this goal is through continued scaling following Moore's law. With the future of device scaling being relatively uncertain in the next 10-20 years, it is important to find new ways to add value to CMOS. Theoretical projections show that monolithic three-dimensional (3D) integration of compound semiconductor (CS) devices can enhance the performance and functionality of future CMOS-based IC's. This becomes increasingly important with continued scaling. With each new technology node the interconnect pitch is reduced, increasing the RC delay. The net result is an increase in response time between circuit components, resulting in a greater need for 3D integration to minimize the length of the contact lines between CMOS and other non-digital functionalities. To achieve this complex goal, a flexible heterogeneous integration strategy is required that can incorporate a diverse selection of materials all onto a single substrate. Electric-field assisted assembly is a promising technique that allows for fast, low temperature and versatile integration of a large variety of materials onto alternative substrates. In this technique, particles can be assembled from solution at high yields, achieving sub-micron alignment registration to predefined features on the substrate. The approach is not limited by mismatch in coefficient of thermal expansion (CTE) and lattice constant, offering the flexibility to apply materials at the device layer, or any subsequent layer in the CMOS backend. In this thesis research, electric-field assisted assembly of micron-sized compound semiconductor (CS) sheets is studied through a combination of experiment and finite element method (FEM) modeling. This work presents a clear picture of charge distribution within an assembled particle on the substrate, and uses the model to accurately predict the preferred assembly position. The assembly position is confirmed experimentally, demonstrating reproducible sub-micron alignment accuracy with respect to patterned features on a substrate. Through a combination of electric-field assisted assembly and top down fabrication, a novel heterogeneous integration strategy is demonstrated. As a proof of concept, this technique is used to create In0.53Ga0.47As fin geometry p+-i-n+ junctions directly on Si substrates. The as-etched fin devices are not rectifying, but with annealing at 350oC in N2 for 20 minutes, the electrical properties are restored. This process is further developed to implement fin tunnel field-effect transistors (TFETs) and metal-oxide semiconductor field-effect transistors (MOSFETs) integrated on Si. While dry etch-induced damage degrades the TFET device performance, fin MOSFETs show considerably better device performance due to their majority carrier device operation. Fin MOSFETs have a subthreshold slope of 280mV/decade and an on/off ratio of ~103 at 100mV. Through technology aided computer design (TCAD) simulations, it is shown that MOSFET performance can be improved by implementing an optimized doping design. To further emphasize the versatility of this heterogeneous integration strategy, solution-synthesized germanium selenide (GeSe) particles are assembled onto Si substrates. GeSe offers promise for phase change memory applications and non-toxic solar cells, due to its bandgap in the visible spectrum and use of earth-abundant non-toxic elements. GeSe nanobelts are measured both with 2-pt and 4-pt single particle measurements, and a resistivity of 360 [omega]-cm is determined. This integration strategy is a reproducible technique for single particle measurements of solution-synthesized materials, something significantly lacking in the field. With such a technique, solution-synthesized particles can be evaluated for their use in future device applications.

Download or read book Integrated Nanoelectronics written by Vinod Kumar Khanna and published by Springer. This book was released on 2016-09-16 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keeping nanoelectronics in focus, this book looks at interrelated fields namely nanomagnetics, nanophotonics, nanomechanics and nanobiotechnology, that go hand-in-hand or are likely to be utilized in future in various ways for backing up or strengthening nanoelectronics. Complementary nanosciences refer to the alternative nanosciences that can be combined with nanoelectronics. The book brings students and researchers from multiple disciplines (and therefore with disparate levels of knowledge, and, more importantly, lacunae in this knowledge) together and to expose them to the essentials of integrative nanosciences. The central idea is that the five identified disciplines overlap significantly and arguably cohere into one fundamental nanotechnology discipline. The book caters to interdisciplinary readership in contrast to many of the existing nanotechnology related books that relate to a specific discipline. The book lays special emphasis on nanoelectronics since this field has advanced most rapidly amongst all the nanotechnology disciplines and with significant commercial pervasion. In view of the significant impact that nanotechnology is predicted to have on society, the topics and their interrelationship in this book are of considerable interest and immense value to students, professional engineers, and reserachers.

Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Download or read book Advances in III V Semiconductor Nanowires and Nanodevices written by Jianye Li and published by Bentham Science Publishers. This book was released on 2011-09-09 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"

Download or read book Gettering and Defect Engineering in Semiconductor Technology XIV written by W. Jantsch and published by Trans Tech Publications Ltd. This book was released on 2011-08-16 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.