Download or read book Infrared and Temperature Programmed Desorption Spectroscopy Analysis of Glow Discharge Hydrogenated Amorphous Silicon a Si H Thin Film written by D. J. Djoko Herry Santjojo and published by . This book was released on 1995 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Glow Discharge Hydrogenated Amorphous Silicon written by K. Tanaka and published by Springer. This book was released on 1989-11-30 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hydrogenated Amorphous Silicon Alloy Deposition Processes written by Werner Luft and published by CRC Press. This book was released on 1993-05-24 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: This reference reviews common film and plasma diagnostic techniques and the deposition and film properties of various hydrogenated amorphous silicon alloys (a-Si:H).;Drawing heavily from studies on a-Si:H solar cells and offering valuable insights into other semiconductor applications of a-Si:H and related alloys, Hydrogenated Amorphous Silicon Alloy Deposition Processes: describes conventional as well as alternative, deposition processes and compares the resulting material properties; systematically categorizes various a-Si:H deposition techniques; details the characteristics of a-Si:H and related alloys with both high and low optical bandgap, including a-SiC:H, a-SiGe:H, and a-SiSn:H; discusses basic designs of glow discharge deposition reactors; evaluates the etching properties of amorphous silicon-based alloys; and examines microcrystalline silicon and silicon carbide.;Providing over 825 literature citations for further study, Hydrogenated Amorphous Silicon Alloy Deposition Processes is an incomparable resource for physicists; materials scientists; chemical, process and production engineers; electrical engineers and technicians in the semiconductor industry; and upper-level undergraduate and graduate students in these disciplines.

Download or read book A Structural and Spectroscopic Study of Glow discharge Hydrogenated Amorphous Silicon written by I. M. Odeh and published by . This book was released on 1982 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Solar Energy Update written by and published by . This book was released on 1981-10 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of Hot Wire Chemical Vapor Deposition of Amorphous Hydrogenated Silicon Using Optical Diagnostics written by Hailan Duan and published by . This book was released on 2003 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fourier Transform Infrared Spectroscopy and Temperature Programmed Desorption of Water Thin Films on the MgO 100 Surface written by Samantha Allison Hawkins and published by . This book was released on 2004 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Comparative Analysis of Hydrogen Content in Hydrogenated Amorphous Silicon a Si H Using Fourier Transfrom Infra red Spectroscopy and Optical Visible Spectroscopy Techniques written by Saadah Abdul Rahman and published by . This book was released on 1995 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Localized States and Transport in Amorphous Silicon Prepared by Glow discharge Decomposition of Silane written by Zimmer Su-Chen Jan and published by . This book was released on 1979 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Hydrogen Induced Defects in Amorphous Silicon written by Jie Zheng and published by . This book was released on 2010 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The motivation of this thesis is to provide quantitative insights into the microscopic interaction mechanisms between atomic hydrogen and hydrogenated amorphous silicon (a-Si:H), particularly the evolution kinetics of the electronic defect states during the interaction. a-Si:H thin films are grown on the total internal reflection surface of a folded miniature optical resonator by thermal decomposition of SiH4 on a hotwire, and are subjected to quantified atomic H fluxes at various substrate temperature. The H-induced defects during the process is monitored in situ by the Evanescent-Wave Cavity Ring-Down Spectroscopy (EW-CRDS), which allows to study the kinetics with a time resolution of 33 ms and sensitivity up to 0.1 ppm in the defect absorption change. The defect evolution process is characterized by a fast increase to a steady state when the H flux is turn on and reversible healing after the H flux is turned off. The effects of the H flux, substrate temperature, film structure and film thickness on the defect evolution process are investigated.

Download or read book A Real Time Study of Hydrogenated Amorphous Silicon Microcrystalline Silicon and Amorphous Silicon Carbide Growth by Optically Enhanced Infrared Reflectance Spectroscopy written by Monica Katiyar and published by . This book was released on 1994 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new, optically enhanced reflection infrared spectroscopy technique is presented to study thin film growth in real time. Here, real time means under actual processing conditions, with a short data acquisition time compared to film changes or growth rates. This technique has industrial application in monitoring and controlling processes which involve a large or complex parameter space. These include interface control and the fundamentals of crystal growth, plasma deposition, and etching. These applications are illustrated in the thesis by studying the deposition of hydrogenated amorphous silicon (a-Si:H), microcrystalline silicon ($mu$c-Si:H), and hydrogenated amorphous silicon carbide $rm (a-Sisb{1-x}Csb{x}$:H) thin films by reactive magnetron sputtering. Complimentary information about the film microstructure is obtained from real time spectroscopic ellipsometry measurements. For a-Si:H growth, we present the first detailed and quantitative set of experimental data on hydrogen incorporation and release processes. The absorption due to the stretching modes of Si-H bonds (1800-2300 cm$sp{-1}$) is used to quantify the increase or loss of H during film growth. A narrow component at $sim$2100 cm$sp{-1}$ corresponding to all SiH$sb{rm X}$ bonds on the physical surface is identified for the first time; the line width of this mode is used to distinguish signals from the bulk and the surface. Various combinations of growth flux (isotope labelling, hydrogen partial pressure between 0.1 and 2.0 mTorr) and substrate material (on SiO$sb2$, a-Si, or a-Si:D) at substrate temperatures between 120 to 350$spcirc$C are used to quantify surface hydrogen coverage, hydrogen implantation, and H removal from surface and sub-surface. We analyze the growth of $mu$c-Si:H on SiO$sb2$ substrate; no evidence of etching during $mu$c-Si deposition is found. We also study the phase transformation of amorphous to microcrystalline silicon when an a-Si film is exposed to a pure H$sb2$ plasma. The a-Si is first heavily hydrogenated and then transforms to $mu$c-Si with a concomitant decrease in H content. During a-Si$rmsb{1-x}$C$rmsb{x}$:H growth, a transition layer rich in hydrogen and carbon is observed between the film and the substrate; steady state growth is not achieved until $>$250 on A SiO$sb2$, and $sim$70 A on a-Si:H substrates.

Download or read book The Physics of Hydrogenated Amorphous Silicon I written by J. D. Joannopoulos and published by . This book was released on 2014-01-15 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Deposition of Device Quality Low Hydrogen Content Hydrogenated Amorphous Silicon at High Deposition Rates written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A method of fabricating device quality, thin-film a-Si:H for use as semiconductor material in photovoltaic and other devices, comprising in any order; positioning a substrate in a vacuum chamber adjacent a plurality of heatable filaments with a spacing distance L between the substrate and the filaments; heating the filaments to a temperature that is high enough to obtain complete decomposition of silicohydride molecules that impinge said filaments into Si and H atomic species; providing a flow of silicohydride gas, or a mixture of silicohydride gas containing Si and H, in said vacuum chamber while maintaining a pressure P of said gas in said chamber, which, in combination with said spacing distance L, provides a P.times. L product in a range of 10-300 mT-cm to ensure that most of the Si atomic species react with silicohydride molecules in the gas before reaching the substrate, to thereby grow a a-Si:H film at a rate of at least 50 .ANG./sec.; and maintaining the substrate at a temperature that balances out-diffusion of H from the growing a-Si:H film with time needed for radical species containing Si and H to migrate to preferred bonding sites.

Download or read book Kinetic Roughening During Hot wire Chemical Vapor Deposition of Hydrogenated Amorphous Silicon written by Brent Andrew Sperling and published by . This book was released on 2006 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the widespread use of hydrogenated amorphous silicon (a-Si:H), the fundamental surface processes during film growth are not well understood. One approach to studying these mechanisms is to analyze the surface morphology that results from their action. In this dissertation, hot-wire chemical vapor deposition is used to deposit a-Si:H thin films. Both post-deposition atomic force microscopy (AFM) and in situ spectroscopic ellipsometry (SE) are used to characterize the surface morphology and its dynamics. Results of this work indicate that the surface morphology is shaped by geometric shadowing of growth particles and thermally-activated smoothening mechanisms. For films grown at low temperature, the local slope of the surface is found to exhibit power law scaling with time that is consistent with anomalous roughening behavior also observed in models that include shadowing. A temperature-dependent transition in roughening behavior is observed, and an activation energy is extracted that agrees with previous estimates for SiH3 surface diffusion. Additionally, a-Si:H grown on rough substrates is examined. Smoothening at short lateral length scales is observed simultaneously with global roughening. Behavior is found to generally agree with deterministic models in the literature. This work also explores the difference between SE and AFM in how roughness is measured. Rayleigh-Rice theory (vector perturbation theory) is used to calculate ellipsometric data that is subsequently compared to the usual method of using an effective medium layer to approximate roughness. SE measurements are found to critically depend on both the vertical extent of roughness and the root-mean-squared slope of the surface.

Download or read book The Physics of Hydrogenated Amorphous Silicon written by John D. Joannopoulos and published by . This book was released on 1984 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Hydrogen Assisted Chemical Vapor Deposition and Etching of Silicon Thin Films written by Shuangying Yu and published by . This book was released on 1996 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: