Download or read book Indium Nitride and Related Alloys written by Timothy David Veal and published by CRC Press. This book was released on 2011-06-03 with total page 707 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.

Download or read book GaN and Related Alloys 2003 written by Hock Min Ng and published by Cambridge University Press. This book was released on 2014-06-05 with total page 862 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 2004, focuses on both the fundamental issues in materials science as well as the technology of photonic, electronic and sensor applications utilizing gallium nitride (GaN) and related alloys. With contributions from 28 countries spanning 5 continents, it is evident that the field is vibrant and growing rapidly. Current and emerging research areas are addressed - epitaxial growth strategies for high-indium-content InGaN alloys, InGaAlN alloys, and dilute nitride alloys; increasing the p-type doping levels in GaN and AlGaN alloys; developing large-area GaN and AlN substrates; controlling and understanding the influence of defects and polarization; device processing techniques; and developing new applications for III-nitrides.

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book Physical Chemistry of Semiconductor Materials and Processes written by and published by John Wiley & Sons. This book was released on 2015-08-17 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.

Download or read book Functional Metal Oxide Nanostructures written by Junqiao Wu and published by Springer Science & Business Media. This book was released on 2011-09-22 with total page 371 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal oxides and particularly their nanostructures have emerged as animportant class of materials with a rich spectrum of properties and greatpotential for device applications. In this book, contributions from leadingexperts emphasize basic physical properties, synthesis and processing, and thelatest applications in such areas as energy, catalysis and data storage. Functional Metal Oxide Nanostructuresis an essential reference for any materials scientist or engineer with aninterest in metal oxides, and particularly in recent progress in defectphysics, strain effects, solution-based synthesis, ionic conduction, and theirapplications.

Download or read book Electrical and Optical Characterization of Group III nitride Alloys for Solar Energy Conversion written by Rebecca Elizabeth Jones and published by . This book was released on 2008 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Download or read book Plasmonic Materials and Metastructures written by Shangjr Gwo and published by Elsevier. This book was released on 2023-09-11 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasmonic Materials and Metastructures: Fundamentals, Current Status, and Perspectives reviews the current status and emerging trends in the development of conventional and alternative plasmonic materials. Sections cover fundamentals and emerging trends of plasmonic materials development, including synthesis strategies (chemical and physical) and optical characterization techniques. Next, the book addresses fundamentals, properties, remaining barriers for commercial translation, and the latest advances and opportunities for conventional noble metal plasmonic materials. Fundamentals and advances for alternative plasmonic materials are also reviewed, including two-dimensional hybrid materials composed of graphene, monolayer transition metal dichalcogenides, boron nitride, etc. In addition, other sections cover applications of plasmonic metastructures enabled by plasmonic materials with improved material properties and newly discovered functionalities. Applications reviewed include quantum plasmonics, topological plasmonics, chiral plasmonics, nanolasers, imaging (metalens), active, and integrated technologies. Provides an overview of materials properties, characterization and fabrication techniques for plasmonic metastructured materials Includes key concepts and advances for a wide range of metastructured materials, including metamaterials, metasurfaces and epsilon-near-zero plasmonic metastructures Discusses emerging applications and barriers to commercial translation for quantum plasmonics, topological plasmonics, nanolasers, imaging and integrated technologies

Download or read book The Group 13 Metals Aluminium Gallium Indium and Thallium written by Simon Aldridge and published by John Wiley & Sons. This book was released on 2011-02-10 with total page 990 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last two decades have seen a renaissance in interest in the chemistry of the main group elements. In particular research on the metals of group 13 (aluminium, gallium, indium and thallium) has led to the synthesis and isolation of some very novel and unusual molecules, with implications for organometallic synthesis, new materials development, and with biological, medical and, environmental relevance. The Group 13 Metals Aluminium, Gallium, Indium and Thallium aims to cover new facts, developments and applications in the context of more general patterns of physical and chemical behaviour. Particular attention is paid to the main growth areas, including the chemistry of lower formal oxidation states, cluster chemistry, the investigation of solid oxides and hydroxides, advances in the formation of III-V and related compounds, the biological significance of Group 13 metal complexes, and the growing importance of the metals and their compounds in the mediation of organic reactions. Chapters cover: general features of the group 13 elements group 13 metals in the +3 oxidation state: simple inorganic compounds formal oxidation state +3: organometallic chemistry formal oxidation state +2: metal-metal bonded vs. mononuclear derivatives group 13 metals in the +1 oxidation state mixed or intermediate valence group 13 metal compounds aluminium and gallium clusters: metalloid clusters and their relation to the bulk phases, to naked clusters, and to nanoscaled materials simple and mixed metal oxides and hydroxides: solids with extended structures of different dimensionalities and porosities coordination and solution chemistry of the metals: biological, medical and, environmental relevance III-V and related semiconductor materials group 13 metal-mediated organic reactions The Group 13 Metals Aluminium, Gallium, Indium and Thallium provides a detailed, wide-ranging, and up-to-date review of the chemistry of this important group of metals. It will find a place on the bookshelves of practitioners, researchers and students working in inorganic, organometallic, and materials chemistry.

Download or read book The Prime Number Conspiracy written by Thomas Lin and published by MIT Press. This book was released on 2018-12-04 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quanta Magazine's stories of mathematical explorations show that “inspiration strikes willy-nilly,” revealing surprising solutions and exciting discoveries. If you're a science and data nerd like me, you may be interested in "Alice and Bob Meet the Wall of Fire" and "The Prime Number Conspiracy" from Quanta Magazine and Thomas Lin. - Bill Gates These stories from Quanta Magazine map the routes of mathematical exploration, showing readers how cutting-edge research is done, while illuminating the productive tension between conjecture and proof, theory and intuition. The stories show that, as James Gleick puts it in the foreword, “inspiration strikes willy-nilly.” One researcher thinks of quantum chaotic systems at a bus stop; another suddenly realizes a path to proving a theorem of number theory while in a friend's backyard; a statistician has a “bathroom sink epiphany” and discovers the key to solving the Gaussian correlation inequality. Readers of The Prime Number Conspiracy, says Quanta editor-in-chief Thomas Lin, are headed on “breathtaking intellectual journeys to the bleeding edge of discovery strapped to the narrative rocket of humanity's never-ending pursuit of knowledge.” Quanta is the only popular publication that offers in-depth coverage of the latest breakthroughs in understanding our mathematical universe. It communicates mathematics by taking it seriously, wrestling with difficult concepts and clearly explaining them in a way that speaks to our innate curiosity about our world and ourselves. Readers of this volume will learn that prime numbers have decided preferences about the final digits of the primes that immediately follow them (the “conspiracy” of the title); consider whether math is the universal language of nature (allowing for “a unified theory of randomness”); discover surprising solutions (including a pentagon tiling proof that solves a century-old math problem); ponder the limits of computation; measure infinity; and explore the eternal question “Is mathematics good for you?” Contributors Ariel Bleicher, Robbert Dijkgraaf, Kevin Hartnett, Erica Klarreich, Thomas Lin, John Pavlus, Siobhan Roberts, Natalie Wolchover Copublished with Quanta Magazine

Download or read book Gallium Nitride and Related Materials written by and published by . This book was released on 1997 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book III Nitride Semiconductors written by Hongxing Jiang and published by CRC Press. This book was released on 2002-06-28 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices. Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers.III-Nitride Semiconductors: Optical Properties Part I combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.

Download or read book III Nitride Semiconductor Materials written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006-03-20 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals.

Download or read book Gallium Nitride and Related Materials II Volume 468 written by C. R. Abernathy and published by Materials Research Society. This book was released on 1997-08-13 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.

Download or read book Advanced Materials Forum III written by Paula M. Vilarinho and published by Trans Tech Publications Ltd. This book was released on 2006-05-15 with total page 1840 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). The aim of this book is to provide the reader with the latest advanced research results on, and an improved understanding of, various aspects of the processing and characterization of materials.

Download or read book Wide Energy Bandgap Electronic Devices written by Fan Ren and published by World Scientific. This book was released on 2003 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics.

Download or read book III nitride written by Zhe Chuan Feng and published by Imperial College Press. This book was released on 2006 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.