Download or read book Incorporation of Elemental Boron During Silicon and Silicon Germanium Molecular Beam Epitaxy written by Carl Patrick Parry and published by . This book was released on 2018 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Incorporation of Elemental Boron During Silicon and Silcon Germanium Molecular Beam Epitaxy written by Carl Patrick Parry and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy written by John Condon Bean and published by . This book was released on 1988 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SiGe Based Technologies written by Y. Shiraki and published by Elsevier. This book was released on 1993-02-18 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.
Download or read book B incorporation Kinetics and Charge Transport Property of Silicon Germanide 001 Layer Grown by GS MBE from Silicon Hydride Germanium Hydride and Boron Hydride written by Qing Lu and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth rates of Si(001) and Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ as a function of T$\sb{\rm s}$ are well described by a model based upon dissociative $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si and Ge monohydride for which the activation energy is 2.04 and 1.56 eV, respectively. The zero-coverage reactive sticking probability of $\rm Si\sb2H\sb6$ on Si(001)2 x 1 ($\rm Ge\sb2H\sb6$ on Ge(001)2 x 1) in the impingement-flux-limited growth regime was found to be $\rm S\sbsp{Si\sb2H\sb6}{Si} = 0.036\ (S\sbsp{Ge\sb2H\sb6}{Ge} = 0.052).$ The growth rate of $\rm Si\sb{1-x}Ge\sb{x}$ alloys R$\sb{\rm SiGe}$ decreases somewhat with increasing $\rm G\sb2H\sb6$ in the flux-limited growth mode while dramatically increasing $\rm R\sb{SiGe}$ in the surface-reaction-limited regime.
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Download or read book Silicon Germanium Strained Layers and Heterostructures written by M. Willander and published by Elsevier. This book was released on 2003-10-02 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers
Download or read book Rapid Thermal Vapor Phase Epitaxy written by John D. Leighton and published by . This book was released on 1994 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Morphological Evolution During Molecular Beam Epitaxy of Germanium germanium 001 and Silicon germanium 111 written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Silicon 011 and Silicon Germanium 011 Gas Source Molecular Beam Epitaxy Surface Reconstructions Growth Kinetics and Germanium Segregation written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selective Molecular Beam Epitaxy of Germanium on Oxide covered Silicon written by Qiming Li and published by . This book was released on 2005 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Quantum Dot Formation by Molecular Beam Epitaxy of Ge on Si 100 written by Sergio Arturo Chaparro and published by . This book was released on 1999 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selected Topics in Group IV and II VI Semiconductors written by E.H.C. Parker and published by Newnes. This book was released on 2012-12-02 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.
Download or read book Metallization and Solid Phase Epitaxy of Germanium silicon Alloys written by Qi-Zhong Hong and published by . This book was released on 1991 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
