Download or read book InAs Ga In Sb Superlattice Based Infrared Detectors Using NBn Design written by Greg Bishop and published by . This book was released on 2008 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Two dimensional Materials for Photodetector written by Pramoda Kumar Nayak and published by BoD – Books on Demand. This book was released on 2018-04-04 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic thin two-dimensional (2D) materials are the thinnest forms of materials to ever occur in nature and have the potential to dramatically alter and revolutionize our material world. Some of the unique properties of these materials including wide photoresponse wavelength, passivated surfaces, strong interaction with incident light, and high mobility have created tremendous interest in photodetector application. This book provides a comprehensive state-of-the-art knowledge about photodetector technology in the range visible to infrared region using various 2D materials including graphene, transition metal dichalcogenides, III-V semiconductor, and so on. It consists of 10 chapters contributed by a team of experts in this exciting field. We believe that this book will provide new opportunities and guidance for the development of next-generation 2D photodetector.
Download or read book Direct Minority Carrier Transport Characterization of InAs InAsSb Superlattice NBn Photodetectors written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10-2 cm2/s. We also report on the device's optical response characteristics at 78 K.
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Infrared Detectors written by Antonio Rogalski and published by CRC Press. This book was released on 2010-11-15 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
Download or read book Antimonide based Infrared Detectors written by Antoni Rogalski and published by . This book was released on 2018 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--
Download or read book InAsSb InAs Strain Balanced Superlattices for Photodetector Applications written by David Lackner and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lately, significant research efforts have been directed towards finding III-V alternatives for HgCdTe infrared detectors for optical gas sensing as well as night and machine vision applications. Despite the advantages of HgCdTe, including a tunable bandgap between 1- 30 mu and a high optical absorption coefficient, difficulties in producing uniform material, which are limiting the size of detector arrays and leading to low yield, combined with challenging epitaxial growth and device processing keeps the technology expensive. Recently InAs/Ga(In)Sb type II short period superlattice detectors with cutoff wavelengths between 3 and 30 mu have been reported. However, these devices all rely on molecular beam epitaxy for the epitaxial growth, as InAs/(In)GaSb short period superlattices of high quality are extremely challenging to realize by organometallic vapour phase epitaxy (OMVPE). OMVPE growth is desirable since it is very suitable for high volume production, which would lead to a significant cost reduction. Thus we have proposed an InAsSb/InAs strain balanced superlattice detector design grown on GaSb. Here, structural and photoluminescence measurements of InAsSb/InAs superlattices are presented for Sb compositions between 4% and 27%. The layer structures were simulated with a state of the art electronic structure calculator based on a self consistent Poisson and Schroedinger equation solver. The calculated transition energies were compared with the measured data. For the first time, the theoretically predicted type IIb alignment, where the InAs conduction band is below the InAsSb conduction band, was confirmed experimentally. The parameters obtained from the simulations were then used to predict the type II transition energies of InAsSb/InAs strain balanced superlattice absorber structures at 77 K for different compositions and periods. The optical matrix element was calculated and compared with that of InAs/(In)GaSb superlattices. The InAsSb/InAs structures can be designed with optical matrix elements that are higher or equal to those of the more well established InAs/Ga(In)Sb superlattices. Finally, initial optical response data of an unoptimized strain balanced InAs0.79Sb0.21/InAs detector is shown. Its cutoff wavelength of 8.5 m (0.15 eV) is in good agreement with the predicted type II transition energy.
Download or read book Design and Development of Two Dimensional Strained Layer Superlattice SLS Detector Arrays for IR Applications written by Ashok K. Sood and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electro-optical/IR applications.
Download or read book Design and Demonstration of InAs Ga1 xInxSb Strained layer Superlattices Optimized for Long wavelength Infrared Detectors dissertation written by Jeffery L Johnson and published by . This book was released on 1997 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanoelectronic Devices for Hardware and Software Security written by Arun Kumar Singh and published by CRC Press. This book was released on 2021-10-31 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronic Devices for Hardware and Software Security has comprehensive coverage of the principles, basic concepts, structure, modeling, practices, and circuit applications of nanoelectronics in hardware/software security. It also covers the future research directions in this domain. In this evolving era, nanotechnology is converting semiconductor devices dimensions from micron technology to nanotechnology. Nanoelectronics would be the key enabler for innovation in nanoscale devices, circuits, and systems. The motive for this research book is to provide relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology for hardware/software security. There are numerous challenges in the development of models for nanoscale devices (e.g., FinFET, gate-all-around devices, TFET, etc.), short channel effects, fringing effects, high leakage current, and power dissipation, among others. This book will help to identify areas where there are challenges and apply nanodevice and circuit techniques to address hardware/software security issues.
Download or read book Technology of Quantum Devices written by Manijeh Razeghi and published by Springer Science & Business Media. This book was released on 2009-12-11 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: Technology of Quantum Devices offers a multi-disciplinary overview of solid state physics, photonics and semiconductor growth and fabrication. Readers will find up-to-date coverage of compound semiconductors, crystal growth techniques, silicon and compound semiconductor device technology, in addition to intersubband and semiconductor lasers. Recent findings in quantum tunneling transport, quantum well intersubband photodetectors (QWIP) and quantum dot photodetectors (QWDIP) are described, along with a thorough set of sample problems.
Download or read book Mid infrared Optoelectronics written by Eric Tournié and published by Woodhead Publishing. This book was released on 2019-10-19 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging
Download or read book Physics and Technology of InAs In Ga Sb Strained Layer Superlattice Detectors written by Sanjay Krishna and published by Wiley. This book was released on 2016-04-11 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book synthesizes all current information and research on the infrared technology of InAs/(In,Ga)Sb Strained Layer Superlattice (SLS) Detectors, covering both the basic science and technological aspects. The chapters are contributed by leading researchers from the top industrial, academic, and government laboratories around the world. The book demonstrates how performance of SLS cameras is stimulated by properties of SLS material, reviews characterization techniques of SLS material developed thus far, and discusses state-of-the-art performance of SLS detectors and FPAs. A handy reference for researchers and practicing professionals, this book may also be used as supplementary material for graduate courses in the field.
Download or read book GaSb based Infrared NBn Detectors Utilizing InAsPSb Absorbers written by and published by . This book was released on 2012 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book VLSI Micro and Nanophotonics written by El-Hang Lee and published by CRC Press. This book was released on 2018-09-03 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addressing the growing demand for larger capacity in information technology, VLSI Micro- and Nanophotonics: Science, Technology, and Applications explores issues of science and technology of micro/nano-scale photonics and integration for broad-scale and chip-scale Very Large Scale Integration photonics. This book is a game-changer in the sense that it is quite possibly the first to focus on "VLSI Photonics". Very little effort has been made to develop integration technologies for micro/nanoscale photonic devices and applications, so this reference is an important and necessary early-stage perspective on this field. New demand for VLSI photonics brings into play various technological and scientific issues, as well as evolutionary and revolutionary challenges—all of which are discussed in this book. These include topics such as miniaturization, interconnection, and integration of photonic devices at micron, submicron, and nanometer scales. With its "disruptive creativity" and unparalleled coverage of the photonics revolution in information technology, this book should greatly impact the future of micro/nano-photonics and IT as a whole. It offers a comprehensive overview of the science and engineering of micro/nanophotonics and photonic integration. Many books on micro/nanophotonics focus on understanding the properties of individual devices and their related characteristics. However, this book offers a full perspective from the point of view of integration, covering all aspects of benefits and advantages of VLSI-scale photonic integration—the key technical concept in developing a platform to make individual devices and components useful and practical for various applications.
Download or read book Study of Structural Optical and Electrical Properties of InAs InAsSb Superlattices Using Multiple Characterization Techniques written by Xiaomeng Shen and published by . This book was released on 2015 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: InAs/InAsSb type-II superlattices (T2SLs) can be considered as potential alternatives for conventional HgCdTe photodetectors due to improved uniformity, lower manufacturing costs with larger substrates, and possibly better device performance. This dissertation presents a comprehensive study on the structural, optical and electrical properties of InAs/InAsSb T2SLs grown by Molecular Beam Epitaxy. The effects of different growth conditions on the structural quality were thoroughly investigated. Lattice-matched condition was successfully achieved and material of exceptional quality was demonstrated.After growth optimization had been achieved, structural defects could hardly be detected, so different characterization techniques, including etch-pit-density (EPD) measurements, cathodoluminescence (CL) imaging and X-ray topography (XRT), were explored, in attempting to gain better knowledge of the sparsely distributed defects. EPD revealed the distribution of dislocation-associated pits across the wafer. Unfortunately, the lack of contrast in images obtained by CL imaging and XRT indicated their inability to provide any quantitative information about defect density in these InAs/InAsSb T2SLs.The nBn photodetectors based on mid-wave infrared (MWIR) and long-wave infrared (LWIR) InAs/InAsSb T2SLs were fabricated. The significant difference in Ga composition in the barrier layer coupled with different dark current behavior, suggested the possibility of different types of band alignment between the barrier layers and the absorbers. A positive charge density of 1.8 1017/cm3 in the barrier of MWIR nBn photodetector, as determined by electron holography, confirmed the presence of a potential well in its valence band, thus identifying type-II alignment. In contrast, the LWIR nBn photodetector was shown to have type-I alignment because no sign of positive charge was detected in its barrier.Capacitance-voltage measurements were performed to investigate the temperature dependence of carrier densities in a metal-oxide-semiconductor (MOS) structure based on MWIR InAs/InAsSb T2SLs, and a nBn structure based on LWIR InAs/InAsSb T2SLs. No carrier freeze-out was observed in either sample, indicating very shallow donor levels. The decrease in carrier density when temperature increased was attributed to the increased density of holes that had been thermally excited from localized states near the oxide/semiconductor interface in the MOS sample. No deep-level traps were revealed in deep-level transient spectroscopy temperature scans.
Download or read book Materials Science and Technology Strained Layer Superlattices written by and published by Academic Press. This book was released on 1991-02-20 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
