Download or read book In Situ Particle Generation During Reactive Ion Etching of SiO Sub 2 written by and published by . This book was released on 1992 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particulate contamination during IC fabrication is generally acknowledged as a major contributor to yield loss. In particular, plasma processes have the potential for generating copious quantities of process induced particulates. Ideally, in order to effectively control process generated particulate contamination, a fundamental understanding of the particulate generation and transport is essential. Although a considerable amount of effort has been expended to study particles in laboratory apparatus, only a limited amount of work has been performed in production line equipment with production processes. In these experiments, a Drytek Quad Model 480 single wafer etcher was used to etch blanket thermal SiO2 films on 150 mm substrates in fluorocarbon discharges. The effects of rf power, reactor pressure, and feed gas composition on particle production rates were evaluated. Particles were measured using an HYT downstream particle flux monitor. Surface particle deposition was measured using a Tencor Surfscan 4500, as well as advanced ex situ techniques. Particle morphology and composition were also determined ex situ. Response surface methodology was utilized to determine the process conditions under which particle generation was most pronounced. The use of in situ and ex situ techniques has provided some insight into the mechanisms involved for particle generation and particle dynamics within the plasma during oxide etching.

Download or read book Process Induced Particulate Generation and Deposition During Reactive Ion Etching of SiO2 written by Paul James Resnick and published by . This book was released on 1991 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of Particle Generation in Sputtering and Reactive Ion Etching of Silicon and Silicon Dioxide written by Won Jong Yoo and published by . This book was released on 1993 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Annual Index written by and published by . This book was released on 1993 with total page 1290 pages. Available in PDF, EPUB and Kindle. Book excerpt: Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.

Download or read book Thresholf Energy for SiO 2 Reactive Ion Etching written by Zhen H. Zhou and published by . This book was released on 1990 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1993 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reactive Ion Etching of SiO2 Using CHF3 CO2 Gas Mixture written by Anthony Hyunwoo Chung and published by . This book was released on 1997 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reactive Ion Etching of Si SiO2 by CHF3 CH4 O2 Gas Mixture written by Usha Raghuram and published by . This book was released on 1993 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Damage Effects to Si SiO2 Structures Due to Reactive Ion Etching written by Moshé D. Bunyan and published by . This book was released on 1990 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reactive Ion Etching of PECVD Silicon Dioxide SiO2 Layer for MEMS Application written by and published by . This book was released on 2004 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reactive ion etching (RIE) process has been developed to etch up to 1-micrometer (1 m) layer of low stress SiO2 (Silicon Dioxide) Plasma Enhanced Chemical Vapor Deposition (PECVD) film compatible for MEMS research applications. Etch rates from as low as 123 nm/min at 100 W to as high as 721 nm/min at 900 W powers were demonstrated using fluorocarbon (CF4) reactive gas plasma. RIE selectivity (SiO2/PR-Photoresist was 3:1 at 900W. The measured thickness variation was 0.13 m on 4-inch substrate for 1 m thick SiO2 film.

Download or read book In Situ Monitoring of Reactive Ion Etching written by Bryan George Oneal Morris and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This research explores a novel in-situ technique for monitoring film thickness in the reactive etching process that incorporates a micromachined sensor. The sensor correlates film thickness with changes in resonant frequency that occurs in the micromachined platform during etching. The sensor consists of a platform that is suspended over drive and sense electrodes on the surface of the substrate. As material is etched from the platform, its resonant vibrational frequency shifts by an amount that is proportional to the amount of material etched, allowing etch rate to be inferred. This RIE monitoring methodology exploits the accuracy of resonant micromechanical structures, whereby shifts in the fundamental resonant frequency measure a physical parameter. A majority of these systems require free-standing mechanical movement and utilize a sacrificial layer process as the key technique to develop and release the structure on a substrate. A sacrificial layer technique that incorporates a low temperature sacrificial polymer was utilized to develop and release the suspended RIE sensor with excellent performance and is capable of fabricating other low cost, high performance and reliable suspended MEMS devices. The integration of sensors and electronic circuitry is a dominant trend in the semiconductor industry, and much work and research has been devoted to this effort. The RIE sensor relies on capacitive transduction to detect small capacitance changes and the resulting change in resonant frequency during the RIE process. The RIE sensor's overall performance is limited by the interface circuit, and integration with the proper circuit allows the RIE sensor to function as a highly sensitive measure of etch rate during the RIE process. A capacitive feedback charge amplifier interface circuit, when configured with the RIE senor at the input achieves very low noise sensing of capacitance changes and offers the potential for wide dynamic range and high sensitivity. As an application vehicle, process control was demonstrated in the PlasmaTherm SLR series RIE system located in the Georgia Tech Microelectronics Research Center.

Download or read book Reactive Ion Etching of SiC Thin Films Using Fluorinated Gases written by J. Sugiura and published by . This book was released on 1985 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2 has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of RF power, pressure, and O2 concentration on etch rate in CF4 + O2, SF6 + H6, and Ar gases has been investigated. RIE mechanisms were studied using in-situ monitoring of excited fluorine emission intensity and DC self bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220 A/min., 600 A/min., and 375 A/min. in CF4 + 4% O2, 8850 A/min., 500 A/min., and 560 A/min. in SF6 + 50% He, and 340 A/min., 280 A/min., and 270 A/min. in Ar, respectively, at P = 200 Watts, p = 20mTorr, and 300K. Under these conditions the DC self bias levels are -396 volts for CF4 + 4% O2, -350 volts for SF6 + 50% He, and -414 volts for Ar. In both CF4 + 4% O2 and SF6 + 50% He, the etch rates of Si, SiO2, and SiC all increase monotonously with the RF power.

Download or read book Dry Etching Technology for Semiconductors written by Kazuo Nojiri and published by Springer. This book was released on 2014-10-25 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.

Download or read book In situ Monitoring of Reactive Ion Etching written by Michael Douglas Baker and published by . This book was released on 1996 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Physical Vapor Deposition PVD Processing written by D. M. Mattox and published by Cambridge University Press. This book was released on 2014-09-19 with total page 947 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the book is on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called ""war stories"", to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language.

Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advanced Plasma Technology written by Riccardo d'Agostino and published by John Wiley & Sons. This book was released on 2008-09-08 with total page 479 pages. Available in PDF, EPUB and Kindle. Book excerpt: A panel of internationally renowned scientists discuss the latest results in plasma technology. This volume has been compiled with both a didactic approach and an overview of the newest achievements for industrial applications. It is divided into two main sections. One is focused on fundamental technology, including plasma production and control, high-pressure discharges, modeling and simulation, diagnostics, dust control, and etching. The section on application technology covers polymer treatments, silicon solar cell, coating and spray, biomaterials, sterilization and waste treatment, plasma propulsion, plasma display panels, and anti-corrosion coatings. The result is an indispensable work for physicists, chemists and engineers involved in the field of plasma technology.