Download or read book Implications of Image Plane Line edge Roughness Requirements on Extreme Ultraviolet Mask Specifications written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Line-edge roughness (LER) and the related effect of contact size variation remain as significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. LER is typically viewed as a resist problem; however, recent simulation results have shown that the mask can indeed be an important contributor. Problems arise from both mask absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam (see Fig. 1). The latter effect is especially important as higher coherence off-axis illumination conditions are used and defocus is considered. Here we describe these effect in detail and explore how they will impact EUV mask requirements for the 22-nm half-pitch node and beyond. Figure 2 shows modeling results for 22-nm lines printed in a 0.32-numerical aperture system with 100-nm defocus assuming a mask with 0.24-nm rms multilayer roughness and no absorber edge roughness (unlike the example in Fig. 1). The impact of the phase roughness on the printed line-edge roughness is clearly evident and demonstrates the basic problem with mask roughness. The more detailed modeling-based analysis to be presented will account for performance throughout the process window as well as non-stochastic resist effects. We note that the mean-field resist effect is important to consider because, in practice, the resist is the limiting resolution element in the system and therefore dominates the mask-error enhancement factor (MEEF). As is typically the case with projection-optic-induced MEEF, the resist-induced MEEF will lead to even tighter mask requirements. Note that we do not consider resist stochastic effects since the purpose of this study is isolate mask-induced sources of image-plane roughness.

Download or read book Mask Roughness and Its Implications for LER at the 22 and 16 nm Nodes written by and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both mask-absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and a ruthenium capping layer roughness specification of 440 pm. Moreover, modeling indicates that it is crucial to achieve the current ITRS specifications for mask absorber LER which is significantly smaller than current capabilities.

Download or read book Mask Roughness Induced LER in EUV Lithography written by Brittany McClinton and published by . This book was released on 2011 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation presents a thorough investigation of how mask roughness induces speckle in the aerial image that leads to line-edge roughness (LER) effects in extreme ultraviolet lithography. As next generation lithography techniques such as extreme-ultraviolet lithography (EUVL) push to ever smaller critical dimensions, achieving the stringent requirements for line-edge and -width roughness (LER/LWR) is increasingly challenging. For this reason, discovering the principle causes leading to LER demands immediate attention. Until recently, LER has been considered a resist-limited effect. Now, however, it is better understood that system-level effects can greatly influence LER. Thus, in order to achieve adequately low LER levels for next generation projection lithography, we must understand not only the basic material properties of the resist, but also how resist effects and mask effects can each contribute to the LER that is ultimately printed. Much research has already been conducted to fully characterize photo-resists available to next generation lithography methods. Other studies have documented how the LER on the mask couples to the printed LER. The issue of mask roughness induced LER is one that has up to this point been neglected by the industry and requires attention from the International Roadmap of Semiconductors (ITRS) in its specifications tables for the successful manufacture of transistor devices in future nodes by EUVL. Specifically, the extent to which system-level effects such as mask surface roughness, defocus, and illumination conditions are currently factoring into LER limits and how to distinguish mask effect from resist effect in practice. Potential levels for mask roughness induced LER contribution are presented for realistic mask surface roughnesses, providing a strong motivation for this work. To be precise, for the 22nm half pitch nodes, the mask roughness induced LER can consume the entire LER budget for an ideal mask roughnesses at -100nm defocus. This thesis focuses on characterizing requirements on mask surface roughness specifications from an LER budget perspective in future nodes where EUVL will likely be employed, and devising simplified models based on 2D thin mask modeling for mask roughness induced LER prediction. A 2D height map of mask surface roughness itself is characterized by mainly two statistical parameters: the first being replicated surface roughness (RSR), which describes the height deviations of roughness on the top surface of the mask, and the second being the correlation length, which is a measure of the lateral surface roughness. The corresponding phase map is constructed by a simple transformation of OPD into phase space with an additional factor of 2 for EUVL reflective mode. The simplified model is then constructed using thin mask modeling of that clearfield rough mask to calculate the resulting speckle statistics, which are an intensity perturbation, and uses fast 1D modeling of the image-log-slope (ILS) to map that intensity perturbation to line-edge movement (LER). This is then verified against fully simulated LER, also in the thin mask approximation. The power of this simplified model lies in the simple physicality of the formulation, elucidating the principle causes of mask roughness induced LER: poor speckle, and bad imaging quality (ILS). The formulation also provides a significant speed enhancement by removing modeling redundancy of multiple feature types on top of the same surface roughness characterizations: only one clearfield speckle simulation is needed for the speckle statistics, which can then be mapped to any feature size through the ILS, and be used by the simplified equation to predict the mask roughness induced LER. The second simplified model is based on a geometric argument of mask slope error, for special cases of mask surface roughness that are globally smooth. In this regime, the mask roughness induced LER collapses to a single value trend across all illumination partial coherence values- hence a geometric regime. Recognizing this fact, the further simplification employs the point spread function (PSF) of the optical system assuming full incoherence, convolved with the rough mask object, to give a simple image of the mask from the wafer plane. Taking the slope of that image and propagating through focus, the mask roughness induced LER contribution can be readily predicted for this geometric limit, and provides an even further speed enhancement to modeling by reducing the redundancy of illumination partial coherence type. Beyond developing simplified models, characterizations of problematic aberrations are made extensively for the 22nm and 16nm half-pitch nodes. This is firstly done through random distributions across the principle Zernike aberrations (Fringe Zernikes 5-16) to determine the overall acceptable level of aberrations in the system of 0.25nm rms from a mask roughness induced LER perspective. A complete aberration sensitivity matrix is then constructed to identify individual Zernikes that are problematic, specific to the node, source shape, and optical system. In addition, mask roughness induced LER mitigation strategies utilizing an alternative source shape called s̀trip' illumination, or, extended dipole, is explored. By using the physicality of the simplified model's equation, we recognize that by increasing incoherence by extending a traditional dipole laterally should help mitigate the speckle, while at the same time, confined coherence orthogonal to the lines and spaces should maintain good imaging quality through the ILS. Thus, overall, the simplified model would predict a reduction in mask roughness induced LER. We compare these results to other illumination candidates specifically for the 22nm node and find that overall, the mask roughness induced LER does benefit minimally for about 0.2nm LER for 100nm defocus conditions, but there lies a significant potential benefit in throughput in comparison to traditional dipole illuminations if one is employing limiting source shapes to manufacture the partial coherence. Lastly, this work studies potential mask roughness induced LER effects introduced by mask cleaning strategies employed for EUVL. We look at effects on lithographic performance of lines and spaces, LER, and contacts based on a repetitive cleaning process and monitor that performance through number of cleans. Overall, we find that the cleaning process does not introduce significant deterioration of the cleaned mask in comparison to a reference mask, up through a 33× cleaning cycle. Since EUVL expects to employ cleans through 22× over the typical lifetime of a mask, the 33× good performance confirms the viability of the cleaning process within a safe margin.

Download or read book Validity of the Thin Mask Approximation in Extreme Ultraviolet Mask Roughness Simulations written by and published by . This book was released on 2011 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the case of extreme ultraviolet (EUV) lithography, modeling has shown that reflector phase roughness on the lithographic mask is a significant concern due to the image plan speckle it causes and the resulting line-edge roughness on imaged features. Modeling results have recently been used to determine the requirements for future production worthy masks yielding the extremely stringent specification of 50 pm rms roughness. Owing to the scale of the problem in terms of memory requirements, past modeling results have all been based on the thin mask approximation. EUV masks, however, are inherently three dimensional in nature and thus the question arises as to the validity of the thin mask approximation. Here we directly compare image plane speckle calculation results using the fast two dimensional thin mask model to rigorous finite-difference time-domain results and find the two methods to be comparable.

Download or read book Extreme Ultraviolet Mask Substrate Surface Roughness Effects on Lithography Patterning written by and published by . This book was released on 2010 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: In extreme ultraviolet lithography exposure systems, mask substrate roughness induced scatter contributes to LER at the image plane. In this paper, the impact of mask substrate roughness on image plane speckle is explicitly evaluated. A programmed roughness mask was used to study the correlation between mask roughness metrics and wafer plane aerial image inspection. We find that the roughness measurements by top surface topography profile do not provide complete information on the scatter related speckle that leads to LER at the image plane. We suggest at wavelength characterization by imaging and/or scatter measurements into different frequencies as an alternative for a more comprehensive metrology of the mask substrate/multilayer roughness effects.

Download or read book System level Line edge Roughness Limits in Extreme Ultraviolet Lithography written by and published by . This book was released on 2008 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: As critical dimensions shrink, line edge and width roughness (LER and LWR) become of increasing concern. Traditionally LER is viewed as a resist-limited effect; however, as critical dimensions shrink and LER requirements become proportionally more stringent, system-level effects begin to play an important role. Recent advanced EUV resist testing results have demonstrated lower bounds on achievable LER at the level of approximately 2 to 3 nm. Here we use modeling to demonstrate that a significant portion of this low bound may in fact be do to system-level effects and in particular the mask. Of concern are both LER on the mask as well as roughness of the multilayer reflector. Modeling also shows roughness (flare) in the projection optics not to be of concern.

Download or read book Optics Letters written by and published by . This book was released on 2000 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamental Principles of Optical Lithography written by Chris Mack and published by John Wiley & Sons. This book was released on 2011-08-10 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fabrication of an integrated circuit requires a variety of physical and chemical processes to be performed on a semiconductor substrate. In general, these processes fall into three categories: film deposition, patterning, and semiconductor doping. Films of both conductors and insulators are used to connect and isolate transistors and their components. By creating structures of these various components millions of transistors can be built and wired together to form the complex circuitry of modern microelectronic devices. Fundamental to all of these processes is lithography, ie, the formation of three-dimensional relief images on the substrate for subsequent transfer of the pattern to the substrate. This book presents a complete theoretical and practical treatment of the topic of lithography for both students and researchers. It comprises ten detailed chapters plus three appendices with problems provided at the end of each chapter. Additional Information: Visiting http://www.lithoguru.com/textbook/index.html enhances the reader's understanding as the website supplies information on how you can download a free laboratory manual, Optical Lithography Modelling with MATLAB®, to accompany the textbook. You can also contact the author and find help for instructors.

Download or read book Harnessing Light written by National Research Council and published by National Academies Press. This book was released on 1998-09-25 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical science and engineering affect almost every aspect of our lives. Millions of miles of optical fiber carry voice and data signals around the world. Lasers are used in surgery of the retina, kidneys, and heart. New high-efficiency light sources promise dramatic reductions in electricity consumption. Night-vision equipment and satellite surveillance are changing how wars are fought. Industry uses optical methods in everything from the production of computer chips to the construction of tunnels. Harnessing Light surveys this multitude of applications, as well as the status of the optics industry and of research and education in optics, and identifies actions that could enhance the field's contributions to society and facilitate its continued technical development.

Download or read book Algorithms for Image Processing and Computer Vision written by J. R. Parker and published by John Wiley & Sons. This book was released on 2010-11-29 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: A cookbook of algorithms for common image processing applications Thanks to advances in computer hardware and software, algorithms have been developed that support sophisticated image processing without requiring an extensive background in mathematics. This bestselling book has been fully updated with the newest of these, including 2D vision methods in content-based searches and the use of graphics cards as image processing computational aids. It’s an ideal reference for software engineers and developers, advanced programmers, graphics programmers, scientists, and other specialists who require highly specialized image processing. Algorithms now exist for a wide variety of sophisticated image processing applications required by software engineers and developers, advanced programmers, graphics programmers, scientists, and related specialists This bestselling book has been completely updated to include the latest algorithms, including 2D vision methods in content-based searches, details on modern classifier methods, and graphics cards used as image processing computational aids Saves hours of mathematical calculating by using distributed processing and GPU programming, and gives non-mathematicians the shortcuts needed to program relatively sophisticated applications. Algorithms for Image Processing and Computer Vision, 2nd Edition provides the tools to speed development of image processing applications.

Download or read book FinFET Modeling for IC Simulation and Design written by Yogesh Singh Chauhan and published by Academic Press. This book was released on 2015-03-17 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: - Why you should use FinFET - The physics and operation of FinFET - Details of the FinFET standard model (BSIM-CMG) - Parameter extraction in BSIM-CMG - FinFET circuit design and simulation - Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts' insight into the specifications of the standard - The first book on the industry-standard FinFET model - BSIM-CMG

Download or read book Soft X Rays and Extreme Ultraviolet Radiation written by David Attwood and published by Cambridge University Press. This book was released on 2007-02-22 with total page 611 pages. Available in PDF, EPUB and Kindle. Book excerpt: This detailed, comprehensive book describes the fundamental properties of soft X-rays and extreme ultraviolet (EUV) radiation and discusses their applications in a wide variety of fields, including EUV lithography for semiconductor chip manufacture and soft X-ray biomicroscopy. The author begins by presenting the relevant basic principles such as radiation and scattering, wave propagation, diffraction, and coherence. He then goes on to examine a broad range of phenomena and applications. The topics covered include spectromicroscopy, EUV astronomy, synchrotron radiation, and soft X-ray lasers. The author also provides a wealth of useful reference material such as electron binding energies, characteristic emission lines and photo-absorption cross-sections. The book will be of great interest to graduate students and researchers in engineering, physics, chemistry, and the life sciences. It will also appeal to practising engineers involved in semiconductor fabrication and materials science.

Download or read book Handbook of Laser Micro and Nano Engineering written by KOJI SUGIOKA. and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook provides a comprehensive review of the entire field of laser micro and nano processing, including not only a detailed introduction to individual laser processing techniques but also the fundamentals of laser-matter interaction and lasers, optics, equipment, diagnostics, as well as monitoring and measurement techniques for laser processing. Consisting of 11 sections, each composed of 4 to 6 chapters written by leading experts in the relevant field. Each main part of the handbook is supervised by its own part editor(s) so that high-quality content as well as completeness are assured. The book provides essential scientific and technical information to researchers and engineers already working in the field as well as students and young scientists planning to work in the area in the future. Lasers found application in materials processing practically since their invention in 1960, and are currently used widely in manufacturing. The main driving force behind this fact is that the lasers can provide unique solutions in material processing with high quality, high efficiency, high flexibility, high resolution, versatility and low environmental load. Macro-processing based on thermal process using infrared lasers such as CO2 lasers has been the mainstream in the early stages, while research and development of micro- and nano-processing are becoming increasingly more active as short wavelength and/or short pulse width lasers have been developed. In particular, recent advances in ultrafast lasers have opened up a new avenue to laser material processing due to the capabilities of ultrahigh precision micro- and nanofabrication of diverse materials. This handbook is the first book covering the basics, the state-of-the-art and important applications of the dynamic and rapidly expanding discipline of laser micro- and nanoengineering. This comprehensive source makes readers familiar with a broad spectrum of approaches to solve all relevant problems in science and technology. This handbook is the ultimate desk reference for all people working in the field.

Download or read book The Glossary of Prosthodontic Terms written by and published by . This book was released on 1994 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book EUV Lithography written by Vivek Bakshi and published by SPIE Press. This book was released on 2009 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: Editorial Review Dr. Bakshi has compiled a thorough, clear reference text covering the important fields of EUV lithography for high-volume manufacturing. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists. The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. Each section contains worked examples, a comprehensive review of challenges, and relevant citations for those who wish to further investigate the subject matter. Dr. Bakshi succeeds in presenting sometimes unfamiliar material in a very clear manner. This book is also valuable as a teaching tool. It has become an instant classic and far surpasses others in the EUVL field. --Dr. Akira Endo, Chief Development Manager, Gigaphoton Inc. Description Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This comprehensive volume is comprised of contributions from the world's leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. About the editor of EUV Lithography Dr. Vivek Bakshi previously served as a senior member of the technical staff at SEMATECH; he is now president of EUV Litho, Inc., in Austin, Texas.

Download or read book Characterization of Amorphous and Crystalline Rough Surface Principles and Applications written by and published by Elsevier. This book was released on 2000-10-23 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: The structure of a growth or an etch front on a surface is not only a subject of great interest from the practical point of view but also is of fundamental scientific interest. Very often surfaces are created under non-equilibrium conditions such that the morphology is not always smooth. In addition to a detailed description of the characteristics of random rough surfaces, Experimental Methods in the Physical Sciences, Volume 37, Characterization of Amorphous and Crystalline Rough Surface-Principles and Applications will focus on the basic principles of real and diffraction techniques for quantitative characterization of the rough surfaces. The book thus includes the latest development on the characterization and measurements of a wide variety of rough surfaces. The complementary nature of the real space and diffraction techniques is fully displayed.Key Features* An accessible description of quantitative characterization of random rough surfaces and growth/etch fronts* A detailed description of the principles, experimentation, and limitations of advanced real-space imaging techniques (such as atomic force microscopy) and diffraction techniques (such as light scattering, X-ray diffraction, and electron diffraction)* Characterization of a variety of rough surfaces (e.g., self-affine, mounded, anisotropic, and two-level surfaces) accompanied by quantitative examples to illustrate the essence of the principles* An insightful description of how rough surfaces are formed* Presentation of the most recent examples of the applications of rough surfaces in various areas

Download or read book Light Scattering by Ice Crystals written by Kuo-Nan Liou and published by Cambridge University Press. This book was released on 2016-10-06 with total page 461 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume outlines the fundamentals and applications of light scattering, absorption and polarization processes involving ice crystals.