Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Download or read book Solutions to Defect Related Problems in Implanted Silicon by Controlled Injection of Vacancies by High Energy Ion Irradiation written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Pre-amorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an attempt to reduce or eliminate this interfacial defect band. High-energy, ion implantation is known to inject a vacancy excess in this region. Vacancies were implanted at a concentration coincident with the excess interstitials below the a-c interface to promote recombination between the two defect species. Preliminary results indicate that a critical fluence, i.e., a sufficient vacancy concentration, will eliminate the interstitial defects. The effect of the reduction or elimination of these interfacial defects upon TED of boron will be discussed. Rutherford backscattering/channeling and cross section transmission electron microscopy analyses were used to characterize the defect structure within the implanted layer. Secondary ion mass spectroscopy was used to profile the dopant distributions.

Download or read book INFLUENCE OF DEFECTS INDUCED BY LOW ENERGY PROTONS ON DIFFUSION LENGTH OF MINORITY CARRIERS IN P TYPE SILICON written by G. M. Grigoreva and published by . This book was released on 1970 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors describe the results of investigations into the effect of irradiation by protons with energies E equals 1-6 MeV on electron diffusion length in p-type silicons. Two types of silicon were investigated: silicon obtained by melt extrusion and doped with boron at a given concentration, and noncrucible, vacuum-grown silicon doped with aluminum in a given concentration. Analysis of the spectral characteristics of n-p-structures revealed variations in the diffusion length of minority current carriers in p-type silicon due to defects induced by proton bombardment. The anomalous results for electron diffusion length after irradiation by 1 and 2 MeV protons is attributed to the diffusion length measurement method. Discrepancy between experimental and theoretical curves for electron diffusion length changes following irradiation by protons with energies E equals 4-6 MeV is attributed to defect annealing. (Author).

Download or read book Physics and Modeling of Ion Implantation Induced Transient Enhanced Diffusion in Silicon written by Henry Shaw Chao and published by . This book was released on 1997 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors written by Diane P. Hickey and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Damage in Si and Ge was produced by Si implantation at 40 keV to a dose of 1 x 1014 cm−2 and 1 x 1015 cm−2, and amorphizing damage in diamond was produced by Si implantation at 1 MeV to a dose of 3 and 7 x 1015 cm−2. All implants were carried out at room temperature. For non-amorphizing implants (1014 Si+ cm−2) into Ge, dot-like defects formed immediately upon implantation and were stable up to temperatures of 650 °C. The activation energy of these defects was determined to be approximately 0.2 " 0.1 eV. For amorphizing implants (1015 Si+ cm−2) into Ge and upon solid-phase epitaxial regrowth, the same types of defects seen in Si were also seen in Ge. However, in Ge, the end-of-range defects were the least stable, dissolving at temperatures around 650 °C. The activation energy for the dissolution of end-of-range defects in Ge is approximately 0.4 " 0.1 eV. For diamond, non-amorphizing Si+ implantation (

Download or read book Implantation Processing of Si written by and published by . This book was released on 1997 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are shown to inject vacancies into a boron implanted region resulting in suppression of transient enhanced diffusion of the dopant.

Download or read book The Electrical Activity of Implantation induced Defects in Silicon written by Brian Holm and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Gettering of Metals in Silicon to Defects Induced by Ion Implantation written by Yin-Yin Jennifer Wong Leung and published by . This book was released on 1997 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion and Defect Data written by and published by . This book was released on 2004 with total page 1264 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Power Devices written by Josef Lutz and published by Springer. This book was released on 2018-02-16 with total page 723 pages. Available in PDF, EPUB and Kindle. Book excerpt: Halbleiter-Leistungsbauelemente sind das Kernstück der Leistungselektronik. Sie bestimmen die Leistungsfähigkeit und machen neuartige und verlustarme Schaltungen erst möglich. In dem Band wird neben den Halbleiter-Leistungsbauelementen selbst auch die Aufbau- und Verbindungstechnik behandelt: von den physikalischen Grundlagen und der Herstellungstechnologie über einzelne Bauelemente bis zu thermomechanischen Problemen, Zerstörungsmechanismen und Störungseffekten. Die 2., überarbeitete Auflage berücksichtigt technische Neuerungen und Entwicklungen.

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1264 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Crystal Growth and Evaluation of Silicon for VLSI and ULSI written by Golla Eranna and published by CRC Press. This book was released on 2014-12-08 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemical

Download or read book INIS Atomindex written by and published by . This book was released on 1988 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt: