Download or read book Impact of Ion Implantation on Quantum Dot Heterostructures and Devices written by Arjun Mandal and published by Springer. This book was released on 2017-06-02 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.
Download or read book Advances in Smart Medical IoT Artificial Intelligence written by Mohammed Serrhini and published by Springer Nature. This book was released on with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Micro and Nanotechnologies Based Product Development written by Neelesh Kumar Mehra and published by CRC Press. This book was released on 2021-09-06 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive information of the nanotechnology-based pharmaceutical product development including a diverse range of arenas such as liposomes, nanoparticles, fullerenes, hydrogels, thermally responsive externally activated theranostics (TREAT), hydrogels, microspheres, micro- and nanoemulsions and carbon nanomaterials. It covers the micro- and nanotechnological aspects for pharmaceutical product development with the product development point of view and also covers the industrial aspects, novel technologies, stability studies, validation, safety and toxicity profiles, regulatory perspectives, scale-up technologies and fundamental concept in the development of products. Salient Features: Covers micro- and nanotechnology approaches with current trends with safety and efficacy in product development. Presents an overview of the recent progress of stability testing, reverse engineering, validation and regulatory perspectives as per regulatory requirements. Provides a comprehensive overview of the latest research related to micro- and nanotechnologies including designing, optimisation, validation and scale-up of micro- and nanotechnologies. Is edited by two well-known researchers by contribution of vivid chapters from renowned scientists across the globe in the field of pharmaceutical sciences. Dr. Neelesh Kumar Mehra is working as an Assistant Professor of Pharmaceutics & Biopharmaceutics at the Department of Pharmaceutics, National Institute of Pharmaceutical Education & Research (NIPER), Hyderabad, India. He received ‘TEAM AWARD’ for successful commercialisation of an ophthalmic suspension product. He has authored more than 60 peer-reviewed publications in highly reputed international journals and more than 10 book chapter contributions. He has filed patents on manufacturing process and composition to improved therapeutic efficacy for topical delivery. He guided PhD and MS students for their dissertations/research projects. He has received numerous outstanding awards including Young Scientist Award and Team Award for his research output. He recently published one edited book, ‘Dendrimers in Nanomedicine: Concept, Theory and Regulatory Perspectives’, in CRC Press. Currently, he is editing books on nano drug delivery-based products with Elsevier Pvt Ltd. He has rich research and teaching experience in the formulation and development of complex, innovative ophthalmic and injectable biopharmaceutical products including micro- and nanotechnologies for regulated market. Dr. Arvind Gulbake is working as an Assistant Professor at the Faculty of Pharmacy, School of Pharmaceutical & Population Health Informatics, at DIT University, Dehradun, India. He has authored more than 40 peer-reviewed publications in highly reputed international journals, four book chapters and a patent contribution. He has received outstanding awards including Young Scientist Award and BRG Travel Award for his research. He is an assistant editor for IJAP. He guided PhD and MS students for their dissertations/research projects. He has successfully completed extramural project funded by SERB, New Delhi, Government of India. He has more than 12 years of research and teaching experience in the formulation and development of nanopharmaceuticals.
Download or read book Fabrication and Measurement of Devices in Si SiGe Nanomembranes written by and published by . This book was released on 2014 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon/silicon-germanium (Si/SiGe) heterostructures are useful as hosts for gated quantum dots. The quality of the as-grown Si/SiGe heterostructure has a large impact on the final quality of the quantum dot as a qubit host. For many years, quantum dots have been fab- ricated on strain-graded heterostructures. Commonly used strain-graded heterostructures inevitably develop plastic defects that lead to interface roughness, crosshatch, and mosaic tilt. All of these factors are sources of disorder in Si/SiGe quantum electronics. In this dissertation, I report the fabrication of Hall bars and gated quantum dots on heterostruc- tures grown on fully elastically relaxed SiGe nanomembranes, rather than strain-graded heterostructures. I report measurements of Hall bars demonstrating the creation of two- dimensional electron gases in these structures. I report the fabrication procedures used to create pairs of Hall bars and quantum dots on individual membranes. In addition, I explain a general process flow for the creation of Si/SiGe quantum devices. I focus especially on an ion-implantation technique I implemented for the fabrication of Hall bars and quantum dots in Si/SiGe heterostructures without modulation doping layers.
Download or read book Ion Implantation Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 1994-12-31 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Download or read book Self Assembled InGaAs GaAs Quantum Dots written by and published by Academic Press. This book was released on 1999-03-29 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
Download or read book Quantum Dot Heterostructures written by Dieter Bimberg and published by John Wiley & Sons. This book was released on 1999-03-17 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Da die Nachfrage nach immer schnelleren und kleineren Halbleiterbauelementen stetig wächst, sind Quanten-Dots und -Pyramiden rasant in den Mittelpunkt der Halbleiterforschung gerückt. Dieses Buch vermittelt einen umfassenden Überblick über den aktuellen Forschungsstand auf diesem Gebiet. Behandelt werden u.a. Fragen, wie Strukturen aufgebaut, wie sie charakterisiert werden und wie sie die Leistungsfähigkeit der Bauelemente bestimmen. (11/98)
Download or read book Heterostructures and Quantum Devices written by Norman G. Einspruch and published by Elsevier. This book was released on 2014-06-28 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.
Download or read book Ion Implantation written by Ishaq Ahmad and published by BoD – Books on Demand. This book was released on 2017-06-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.
Download or read book Semiconductor Physical Electronics written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2007-01-16 with total page 708 pages. Available in PDF, EPUB and Kindle. Book excerpt: The updated edition of this book provides comprehensive coverage of fundamental semiconductor physics. This subject is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. It has been revised to reflect advances in semiconductor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace.
Download or read book Influence of Quantum Dot Structure on the Optical Properties of Group IV Materials Fabricated by Ion Implantation written by Eric G. Barbagiovanni and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In nanostructures (NSs), to acquire a fundamental understanding of the electronic states by studying the optical properties is inherently complicated. A widely used simplification to this problem comes about by developing a model for a small scale representation of types of NSs and applying it to a hierarchy of fabrication methods. However, this methodology fails to account for structural differences incurred by the fabrication method that lead to differences in the optical properties. Proper modelling is realized by first considering the proper range of experimental parameters individually as inputs to a theoretical model and applying the correct parameters to the corresponding fabrication method. This thesis studies the connection between the structural and optical properties of NSs as a function of the fabrication method, using, principally, x-ray photoemission, Rutherford backscattering, photoluminesence, and Raman spectroscopy. Ion implanted Si and Ge quantum dots (QDs) in dielectric matrix were prepared to study the optical and structural properties, and compared against several other preparation methods. Ge QDs are known to exhibit a high concentration of defect states. The cause of these states was studied for QDs in a sapphire matrix and attributed to diffusion and desorption of Ge during annealing. Optical studies of Si QDs fabricated using an implantation mask revealed that state-filling and excitation transfer are important parameters in densely packed QD arrays. Structural analysis of Si QDs in silica revealed a well defined interface composed of Si$_2$O$_3$ and no stress was detected. Furthermore, the valence level was pinned at its bulk position possibly due to interface states. This information was used to refine our theoretical model of QDs and then compared with a range of crystalline and amorphous Si and Ge NSs. Stronger confinement effects were observed in amorphous Si and Ge NSs, possibly due to the nature of the interface or re-normalization of the effective mass as a function of NS size. These results establish a framework for proper parameter control in theoretical modelling.
Download or read book Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics written by Mohamed Henini and published by Elsevier. This book was released on 2011-07-28 with total page 862 pages. Available in PDF, EPUB and Kindle. Book excerpt: The self-assembled nanostructured materials described in this book offer a number of advantages over conventional material technologies in a wide range of sectors. World leaders in the field of self-organisation of nanostructures review the current status of research and development in the field, and give an account of the formation, properties, and self-organisation of semiconductor nanostructures. Chapters on structural, electronic and optical properties, and devices based on self-organised nanostructures are also included. Future research work on self-assembled nanostructures will connect diverse areas of material science, physics, chemistry, electronics and optoelectronics. This book will provide an excellent starting point for workers entering the field and a useful reference to the nanostructured materials research community. It will be useful to any scientist who is involved in nanotechnology and those wishing to gain a view of what is possible with modern fabrication technology. Mohamed Henini is a Professor of Applied Physics at the University of Nottingham. He has authored and co-authored over 750 papers in international journals and conference proceedings and is the founder of two international conferences. He is the Editor-in-Chief of Microelectronics Journal and has edited three previous Elsevier books. Contributors are world leaders in the field Brings together all the factors which are essential in self-organisation of quantum nanostructures Reviews the current status of research and development in self-organised nanostructured materials Provides a ready source of information on a wide range of topics Useful to any scientist who is involved in nanotechnology Excellent starting point for workers entering the field Serves as an excellent reference manual
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book Optical Effects of Ion Implantation written by P. D. Townsend and published by Cambridge University Press. This book was released on 1994-06-23 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to give a detailed description of the factors and processes that govern the optical properties of ion implanted materials, as well as an overview of the variety of devices that can be produced in this way. Beginning with an overview of the basic physics and practical methods involved in ion implantation, the topics of optical absorption and luminescence are then discussed. A chapter on waveguide analysis then provides the background for a description of particular optical devices, such as waveguide lasers, mirrors, and novel nonlinear materials. The book concludes with a survey of the exciting range of potential applications.
Download or read book Physics and Applications of Semiconductor Quantum Structures written by T. Yao and published by CRC Press. This book was released on 2001-01-01 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by international experts, Physics and Applications of Semiconductor Quantum Structures covers the most important recent advances in the field. Beginning with a review of the evolution of semiconductor superlattices and quantum nanostructures, the book explores fabrication and characterization techniques, transport, optical, and spin-depende
Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Download or read book Quantum Dot Devices and Computing written by James Anthony Lott and published by SPIE-International Society for Optical Engineering. This book was released on 2002 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
