Download or read book Hot electron Effects in Si MOSFETs written by Simon Mun-Kong Tam and published by . This book was released on 1984 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot electron Effects in VLSI MOSFET S written by Tung-yi Philip Chan and published by . This book was released on 1987 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comparison of Hot Electron Effects in MOSFETs with Silicon Dioxide and Thermally Nitrided Gate Dielectrics written by Abhijit Gupta and published by . This book was released on 1988 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot electron Effects in MOSFETs written by Ping Keung Ko and published by . This book was released on 1982 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Electron Effects in N channel MOSFET s written by Siu-shun Burnette Or and published by . This book was released on 1991 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation is a function of the AC average substrate current under the various AC stress conditions but not a function of frequency or waveforms or different measurement configurations. An empirical model is constructed for circuit applications. It is verified that the self-limiting in drain current is due to the thermal re-emission of a trapped-hot-electron in the oxide. Results show that self-heating during AC stress releases trapped electrons, which in turn limits the maximum amount of drain current degradation. Moreover, tunneling to and from traps model is employed to visualize the internal mechanism of thermal recovery of electrons under different bias conditions. Although the LDD device structure can reduce the hot electron effect, various processing technologies can also affect the device reliability. A carbon doped LDD device with the first and the second level metal and passivation layer but without any final anneal shows that a significant reduction in the shifts of the threshold voltage of MOSFETs with time can be achieved. However, the long-term reliability projection of nMOSFETs based on DC stress tests alone is shown to be overly pessimistic.
Download or read book A Simplified Calculation of Hot electron Effects in MOSFETs written by Katherine Anne Vavrina and published by . This book was released on 1989 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot carrier Effects in P MOSFETs written by Tong-Chern Ong and published by . This book was released on 1988 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Electron Effects in N channel MOSFETs Operating at 77K written by John Anthony Bracchitta and published by . This book was released on 1984 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Effects in MOS Devices written by Eiji Takeda and published by Academic Press. This book was released on 1995 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Download or read book Degradations of MOSFETs from High Temperature Radiation and Hot Electron Effects written by Cheng-Fuh Jeffrey Tang and published by . This book was released on 1987 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling of hot electron effects in si mos devices written by Peter Elias and published by . This book was released on 1993 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Electron Effects written by Mark Stephen Musrock and published by . This book was released on 1997 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Hot Electron Effect in Mosfet Devices at Low Temperature written by Hai Wang and published by . This book was released on 1987 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Effects in MOS Devices written by Eiji Takeda and published by Elsevier. This book was released on 1995-11-28 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Download or read book Hot Electrons in Semiconductors written by N. Balkan and published by . This book was released on 1998 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
Download or read book Silicon RF Power MOSFETS written by B. Jayant Baliga and published by World Scientific. This book was released on 2005 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks."--BOOK JACKET.Title Summary field provided by Blackwell North America, Inc. All Rights Reserved
Download or read book Comparison and Analysis of Hot Electron Injection Effects on Short Channel MOSFETs written by Idawati Hartana and published by . This book was released on 1992 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
