Download or read book Physics of Hot Electron Transport in Semiconductors written by Chin Sen Ting and published by World Scientific. This book was released on 1992 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
Download or read book Digital Integrated Circuits written by Jan M. Rabaey and published by . This book was released on 1996 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beginning with discussions on the operation of electronic devices and analysis of the nucleus of digital design, the text addresses: the impact of interconnect, design for low power, issues in timing and clocking, design methodologies, and the effect of design automation on the digital design perspective.
Download or read book Hot Electrons in Semiconductors written by N. Balkan and published by . This book was released on 1998 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Download or read book Hot electron Effects in Si MOSFETs written by Simon Mun-Kong Tam and published by . This book was released on 1984 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Electron Effects in SCL Diodes and Mosfets written by Mona Mahmoud Abdel-Rahman and published by . This book was released on 1972 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Kappa Distributions written by George Livadiotis and published by Elsevier. This book was released on 2017-04-19 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: Kappa Distributions: Theory and Applications in Plasmas presents the theoretical developments of kappa distributions, their applications in plasmas, and how they affect the underpinnings of our understanding of space and plasma physics, astrophysics, and statistical mechanics/thermodynamics. Separated into three major parts, the book covers theoretical methods, analytical methods in plasmas, and applications in space plasmas. The first part of the book focuses on basic aspects of the statistical theory of kappa distributions, beginning with their connection to the solid backgrounds of non-extensive statistical mechanics. The book then moves on to plasma physics, and is devoted to analytical methods related to kappa distributions on various basic plasma topics, spanning linear/nonlinear plasma waves, solitons, shockwaves, and dusty plasmas. The final part of the book deals with applications in space plasmas, focusing on applications of theoretical and analytical developments in space plasmas from the heliosphere and beyond, in other astrophysical plasmas. Kappa Distributions is ideal for space, plasma, and statistical physicists; geophysicists, especially of the upper atmosphere; Earth and planetary scientists; and astrophysicists. - Answers important questions, such as how plasma waves are affected by kappa distributions and how solar wind, magnetospheres, and other geophysical, space, and astrophysical plasmas can be modeled using kappa distributions - Presents the features of kappa distributions in the context of plasmas, including how kappa indices, temperatures, and densities vary among the species populations in different plasmas - Provides readers with the information they need to decide which specific formula of kappa distribution should be used for a certain occasion and system (toolbox)
Download or read book Hot Electron Transport in Semiconductors written by L. Reggiani and published by Springer Science & Business Media. This book was released on 2006-01-20 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hot-Electron Transport in Semiconductors (Topics in Applied Physics).
Download or read book Cadmium Telluride Quantum Dots written by John Donegan and published by CRC Press. This book was released on 2013-12-03 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last two decades, semiconductor quantum dots—small colloidal nanoparticles—have garnered a great deal of scientific interest because of their unique properties. Among nanomaterials, CdTe holds special technological importance as the only known II–VI material that can form conventional p–n junctions. This makes CdTe very important for the development of novel optoelectronic devices such as light-emitting diodes, solar cells, and lasers. Moreover, the demand for water-compatible light emitters and the most common biological buffers give CdTe quantum dots fields a veritable edge in biolabeling and bioimaging. Cadmium Telluride Quantum Dots: Advances and Applications focuses on CdTe quantum dots and addresses their synthesis, assembly, optical properties, and applications in biology and medicine. It makes for a very informative reading for anyone involved in nanotechnology and will also benefit those scientists who are looking for a comprehensive account on the current state of quantum dot–related research.
Download or read book Hot Carrier Effects in MOS Devices written by Eiji Takeda and published by Elsevier. This book was released on 1995-11-28 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. - Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book - The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field - The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions - Provides the most complete review of device degradation mechanisms as well as drain engineering methods - Contains the most extensive reference list on the subject
Download or read book Nanostructured Materials for Solar Energy Conversion written by Tetsuo Soga and published by Elsevier. This book was released on 2006-12-14 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured Materials for Solar Energy Conversion covers a wide variety of materials and device types from inorganic materials to organic materials. This book deals with basic semiconductor physics, modelling of nanostructured solar cell, nanostructure of conventional solar cells such as silicon, CIS and CdTe, dye-sensitized solar cell, organic solar cell, photosynthetic materials, fullerene, extremely thin absorber (ETA) solar cell, quantum structured solar cell, intermediate band solar cell, carbon nanotube, etc. including basic principle and the latest results. There are many books written on conventional p-n junction solar cells, but few books focus on new concepts in this area.* Focuses on the use of nanostructured materials for solar energy* Looks at a wide variety of materials and device types* Covers both organic and inorganic materials
Download or read book Noble Metal Metal Oxide Hybrid Nanoparticles written by Satyabrata Mohapatra and published by Elsevier. This book was released on 2018-10-11 with total page 675 pages. Available in PDF, EPUB and Kindle. Book excerpt: Noble Metal-Metal Oxide Hybrid Nanoparticles: Fundamentals and Applications sets out concepts and emerging applications of hybrid nanoparticles in biomedicine, antibacterial, energy storage and electronics. The hybridization of noble metals (Gold, Silver, Palladium and Platinum) with metal-oxide nanoparticles exhibits superior features when compared to individual nanoparticles. In some cases, metal oxides act as semiconductors, such as nano zinc oxide or titanium oxide nanoparticles, where their hybridization with silver nanoparticles, enhanced significantly their photocatalytic efficiency. The book highlights how such nanomaterials are used for practical applications. - Examines the properties of metal-metal oxide hybrid nanoparticles that make them so adaptable - Explores the mechanisms by which nanoparticles interact with each other, showing how these can be exploited for practical applications - Shows how metal oxide hybrid nanomaterials are used in a range of industry sectors, including energy, the environment and healthcare
Download or read book High Speed Electronics written by Bengt Källbäck and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 239 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past, a number of Satellite Conferences have been held in con nection with the International Conference on Physics of Semiconductors, covering selected fields of interest. In 1986, when the main conference was held in Stockholm, Sweden, new. phenomena had to be discussed: super lattices, hot 'electron phenomena and new device structures for high-speed applications. The aim was to select topics which would be of interest to physicists as well as to electronics engineers. Therefore a Satellite Con ference on H!gh-Speed Electronics, Basic Physical Phenomena and Device Principles, was arranged at Saltjobaden, a coastal resort near Stockholm. An organizing committee was established after the first suggestion made by Professor Grimmeiss from the University of Lund, Sweden, and some preliminary discussions on the Conference format. A Program Committee was established to be responsible for the further selection of the invited talks, the regular papers and poster presentation. The aim was to have a broad spectrum of contributions to attract physicists as well as device oriented engineers and to stimulate discussions among the participants. These Proceedings contain all oral and poster presentations, with em phasis on the invited talks, which give a competent overview of the field. The fast publication by Springer-Verlag has permitted the presentation of an up-to-date survey of the principles of high-speed electronics. Incorpo ration in the Springer Series in Electronics and Photonics will enable the book to be distributed worldwide and to reach all interested scientists.
Download or read book Germanium Based Technologies written by Cor Claeys and published by Elsevier. This book was released on 2011-07-28 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. - State-of-the-art information available for the first time as an all-in-source - Extensive reference list making it an indispensable reference book - Broad coverage from fundamental aspects up to industrial applications
Download or read book Advanced Theory of Semiconductor Devices written by Karl Hess and published by Wiley-IEEE Press. This book was released on 2000 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical Engineering Advanced Theory of Semiconductor Devices Semiconductor devices are ubiquitous in today’s world and are found increasingly in cars, kitchens and electronic door locks, attesting to their presence in our daily lives. This comprehensive book provides the fundamentals of semiconductor device theory from basic quantum physics to computer-aided design. Advanced Theory of Semiconductor Devices will improve your understanding of computer simulation of devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III–V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p—n junction diodes. Close attention is also given to innovative treatments of quantum-well laser diodes and hot electron effects in silicon technology. This in-depth book is written for engineers, graduate students, and research scientists in solid-state electronics who want to gain a better understanding of the principles underlying semiconductor devices.
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Download or read book The Effects of Hot electron Injection Cathodes on the Performance of Gallium Arsenide Vertical Field effect Transistors written by Joel Robert Wendt and published by . This book was released on 1988 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
