Download or read book Hot Carrier Design Considerations for MOS Devices and Circuits written by Cheng Wang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Download or read book Electrical Characterization of Silicon on Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 1995-06-30 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Download or read book Istfa 98 written by ASM International and published by ASM International. This book was released on 1998-01-01 with total page 453 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selected Semiconductor Research written by Ming Fu Li and published by World Scientific. This book was released on 2011-02-28 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering./a
Download or read book Linear CMOS RF Power Amplifiers written by Hector Solar Ruiz and published by Springer Science & Business Media. This book was released on 2013-09-14 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor’s geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides different techniques and architectures that allow for optimization.
Download or read book Physical and Technical Problems of SOI Structures and Devices written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by M. Jamal Deen and published by The Electrochemical Society. This book was released on 1997 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Quality and Reliability of Technical Systems written by Alessandro Birolini and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt: High reliability, maintainability, and safety are expected from complex equipment and systems. To build these characteristics into an item, failure rate and failure mode analyses have to be performed early in the design phase, starting at the com ponent level, and have to be supported by a set of design guidelines for reliability and maintainability as well as by extensive design reviews. Before production, qualification tests of prototypes must ensure that quality and reliability targets have been reached. In the production phase, processes and procedures have to be selec ted and monitored to assure the required quality level. For many systems, availabi lity requirements must also be satisfied. In these cases, stochastic processes can be used to investigate and optimize availability, including logistical support. This book presents the state of the art of the methods and procedures necessary for a cost and time effective quality and reliability assurance during the design and production of equipment and systems. It takes into consideration that: 1. Quality and reliability assurance of complex equipment and systems requires that all engineers involved in a project undertake a set of specific activities from the definition to the operating phase, which are performed concurrently to achieve the best performance, quality, and reliability for given cost and time schedule targets.
Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
Download or read book Flash Memories written by Paulo Cappelletti and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
Download or read book Thin Film Transistor Technologies TFTT VII written by Yue Kuo and published by The Electrochemical Society. This book was released on 2005 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability Engineering written by Elsayed A. Elsayed and published by John Wiley & Sons. This book was released on 2021-01-07 with total page 930 pages. Available in PDF, EPUB and Kindle. Book excerpt: Get a firm handle on the engineering reliability process with this insightful and complete resource Named one of the Best Industrial Management eBooks of All Time by BookAuthority As featured on CNN, Forbes and Inc – BookAuthority identifies and rates the best books in the world, based on recommendations by thought leaders and experts The newly and thoroughly revised 3rd Edition of Reliability Engineering delivers a comprehensive and insightful analysis of this crucial field. Accomplished author, professor, and engineer, Elsayed. A. Elsayed includes new examples and end-of-chapter problems to illustrate concepts, new chapters on resilience and the physics of failure, revised chapters on reliability and hazard functions, and more case studies illustrating the approaches and methodologies described within. The book combines analyses of system reliability estimation for time independent and time dependent models with the construction of the likelihood function and its use in estimating the parameters of failure time distribution. It concludes by addressing the physics of failures, mechanical reliability, and system resilience, along with an explanation of how to ensure reliability objectives by providing preventive and scheduled maintenance and warranty policies. This new edition of Reliability Engineering covers a wide range of topics, including: Reliability and hazard functions, like the Weibull Model, the Exponential Model, the Gamma Model, and the Log-Logistic Model, among others System reliability evaluations, including parallel-series, series-parallel, and mixed parallel systems The concepts of time- and failure-dependent reliability within both repairable and non-repairable systems Parametric reliability models, including types of censoring, and the Exponential, Weibull, Lognormal, Gamma, Extreme Value, Half-Logistic, and Rayleigh Distributions Perfect for first-year graduate students in industrial and systems engineering, Reliability Engineering, 3rd Edition also belongs on the bookshelves of practicing professionals in research laboratories and defense industries. The book offers a practical and approachable treatment of a complex area, combining the most crucial foundational knowledge with necessary and advanced topics.
Download or read book Hot Carrier Reliability of MOS VLSI Circuits written by Yusuf Leblebici and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Download or read book Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Vikram J. Kapoor and published by The Electrochemical Society. This book was released on 1994 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Integrated Reliability Workshop Final Report written by and published by . This book was released on 2005 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 2003 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Performance Digital VLSI Circuit Design written by Richard X. Gu and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-Performance Digital VLSI Circuit Design is the first book devoted entirely to the design of digital high-performance VLSI circuits. CMOS, BiCMOS and bipolar ciruits are covered in depth, including state-of-the-art circuit structures. Recent advances in both the computer and telecommunications industries demand high-performance VLSI digital circuits. Digital processing of signals demands high-speed circuit techniques for the GHz range. The design of such circuits represents a great challenge; one that is amplified when the power supply is scaled down to 3.3 V. Moreover, the requirements of low-power/high-performance circuits adds an extra dimension to the design of such circuits. High-Performance Digital VLSI Circuit Design is a self-contained text, introducing the subject of high-performance VLSI circuit design and explaining the speed/power tradeoffs. The first few chapters of the book discuss the necessary background material in the area of device design and device modeling, respectively. High-performance CMOS circuits are then covered, especially the new all-N-logic dynamic circuits. Propagation delay times of high-speed bipolar CML and ECL are developed analytically to give a thorough understanding of various interacting process, device and circuit parameters. High-current phenomena of bipolar devices are also addressed as these devices typically operate at maximum currents for limited device area. Different, new, high-performance BiCMOS circuits are presented and compared to their conventional counterparts. These new circuits find direct applications in the areas of high-speed adders, frequency dividers, sense amplifiers, level-shifters, input/output clock buffers and PLLs. The book concludes with a few system application examples of digital high-performance VLSI circuits. Audience: A vital reference for practicing IC designers. Can be used as a text for graduate and senior undergraduate students in the area.
