Download or read book Hot carrier Degradation of Deep sub Micron MOS Transistors written by Pradeep Garg and published by . This book was released on 2001 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Matching Properties of Deep Sub Micron MOS Transistors written by Jeroen A. Croon and published by Springer Science & Business Media. This book was released on 2006-06-20 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Download or read book Hot Carrier Effects in MOS Devices written by Eiji Takeda and published by Academic Press. This book was released on 1995 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject

Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Download or read book Hot Carrier Effect on LDMOS Transistors written by Liangjun Jiang and published by . This book was released on 2007 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by providing a smooth junction transition instead of an abrupt one. Therefore, the amount of hot carrier generation for a given supply voltage and the influence of a certain physical damage on the electrical characteristics is decreased dramatically. A complete understanding of the hot carrier degradation problem in sub-micron 0.25um LD MOSFETs is presented in this work. First we discuss the degradation mechanisms observed under, for circuit operation, somewhat artificial but well-controlled uniform-substrate hot electron and substrate hot-hole injection conditions. Then the more realistic case of static channel hot carrier degradation is treated, and some important process-related effects are illustrated, followed by the behavior under the most relevant case for real operation, namely dynamic degradation. An Accurate and practical parameter extraction is used to obtain the LD MOSFETs model parameters, with the experiment verification. Good agreement between the model simulation and experiment is achieved. The gate charge transfer performance is examined to demonstrate the hot carrier effect. Furthermore, In order to understand the dynamic stress on the LD MOSFET and its effect on RF circuit, the hot-carrier injection experiment in which dynamic stress with different duty cycle applied to a LD MOS transistor is presented. A Class-C power amplifier is used to as an example to demonstrate the effect of dynamic stress on RF circuit performance. Finally, the strategy for improving hot carrier reliability and a forecast of the hot carrier reliability problem for nano-technologies are discussed. The main contribution of this work is, it systemically research the hot carrier reliability issue on the sub-micron lateral doped drain MOSFETs, which is induced by static and dynamic voltage stress; The stress condition mimics the typical application scenarios of LD MOSFET. Model parameters extraction technique is introduced with the aid of the current device modeling tools, the performance degradation model can be easily implement into the existing computer-aided tools. Therefore, circuit performance degradation can be accurately estimated in the design stage. CMOS technologies are constantly scaled down. The production on 65 nm is on the market. With the reduction in geometries, the devices become more vulnerable to hot carrier injection (HCI). HCI reliability is a must for designs implemented with new processes. Reliability simulation needs to be implemented in PDK libraries located on the modeling stage. The use of professional tools is a prerequisite to develop accurate device models, from DC to GHz, including noise modeling and nonlinear HF effects, within a reasonable time. Designers need to learn to design for reliability and they should be educated on additional reliability analyses. The value is the reduction of failure and redesign costs.

Download or read book Hot Carrier Reliability of MOS VLSI Circuits written by Yusuf Leblebici and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.

Download or read book Hot Carrier Degradation of Sub micron N channel MOSFETs Subject to Static Stress written by Payman G. Aminzadeh and published by . This book was released on 1993 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage for maximum degradation is found to be different than the gate voltage for which the substrate current is maximum; this is in contrast to the results of previous workers who found degradation and substrate current to be strongly correlated. However, under normal operating conditions, degradation and substrate current are found to be correlated. Furthermore, through the use of charge pumping measurements it is shown that two primary mechanisms are accountable for the degradation of these devices at small and large gate voltages. First, at large gate voltages there is an increase in the degradation which is predominantly due to electron injection and trapping in the oxide. An alternating static injection experiment shows that this type of electron trapping degradation is recoverable. Second, at small gate voltages degradation is mainly related to interface state generation near the drain LDD region. Floating gate measurements demonstrate that electron and hole injection occurs at large and small gate voltages, respectively. It is also shown that maximum interface state creation occurs when electron and hole injection happens simultaneously.

Download or read book Hot Carrier Design Considerations for MOS Devices and Circuits written by Cheng Wang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.

Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.

Download or read book Modeling and Simulation OfpMOSFET Hot carrier Degradation in Very Large CMOS Circuits written by Weishi Sun and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The goals of the research work presented in this thesis are to model submicron pMOS transistor hot-carrier degradation and to develop a fast reliability simulation tool for hot-carrier reliability analysis of CMOS VLSI circuits. This simulator should be able to handle very large submicrometer circuits accurately and efficiently. As device sizes shrink into the submicron region, pMOS transistor hot-carrier degradation becomes increasingly more important. There has not, however, been a widely accepted model for pMOS transistor hot-carrier degradation unlike that for nMOS transistors. Existing reliability simulations tools are primarily based on transistor level simulation and, therefore, can not handle large circuits efficiently. Using the fast-timing-based reliability simulator, ILLIADS-R, and the empirical model developed based on our experimental results, hot-carrier reliability can be well predicted. ILLIADS-R also serves as an integral part of the hierarchical design-for-reliability system. A new hot-carrier degradation model is developed for submicron pMOS transistors. Using this model, the pMOS transistor hot-carrier degradation can be predicted based on the total injected charge into the gate oxide region and the initial gate current under normal operating condition. This model is integrated into the fast-timing-based reliability simulation tool, ILLIADS-R. The simulation results demonstrate that ILLIADS-R outperforms the existing reliability simulator BERT in terms of simulation speed with a comparable accuracy. Also studied are the pMOS transistor subthreshold leakage characteristics as a function of hot-carrier stress conditions. It is shown that subthreshold leakage current is a future limit to the pMOS device lifetime.

Download or read book Low Voltage Hot carrier Issues in Deep sub micron Metal oxide semiconductor Field effect transistors written by Anil Kottantharayil and published by . This book was released on 2002 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization Methods for Submicron Mosfets written by Hisham Haddara and published by . This book was released on 1996-01-31 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject.

Download or read book Characterization of Hot carrier Degradation in Submicrometer MOS Transistors written by Diing Shenp Ang and published by . This book was released on 1997 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book IEEE TENCON 2003 written by and published by Allied Publishers. This book was released on 2003 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.

Download or read book Handbook of Semiconductor Manufacturing Technology written by Yoshio Nishi and published by CRC Press. This book was released on 2017-12-19 with total page 1720 pages. Available in PDF, EPUB and Kindle. Book excerpt: Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.

Download or read book Frontiers In Electronics With Cd rom Proceedings Of The Wofe 04 written by Michael S Shur and published by World Scientific. This book was released on 2006-08-10 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.