Download or read book Highly Selective Reactive Ion Etching of Polysilicon with Bromine Plasma written by Ali M. El-Husseini and published by . This book was released on 1991 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Symposium on Highly Selective Dry Etching and Damage Control written by G. S. Mathad and published by The Electrochemical Society. This book was released on 1993 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Etching and Reactive Ion Etching written by J. W. Coburn and published by . This book was released on 1982 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advanced Silicon Semiconducting Silicon Alloy Based Materials Devices written by Jo Nijs and published by CRC Press. This book was released on 2021-05-30 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.

Download or read book Reactive Ion Etching of Photoresist masked N Polysilicon Surface Features in a Molecular Chlorine oxygen Plasma written by Stephanie Nadine Chanat and published by . This book was released on 1995 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Processing written by R. G. Frieser and published by . This book was released on 1981 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book IBM Journal of Research and Development written by and published by . This book was released on 1999 with total page 958 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanotechnology and Nanoelectronics written by Wolfgang Fahrner and published by Springer Science & Business Media. This book was released on 2005-12-05 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Split a human hair thirty thousand times, and you have the equivalent of a nanometer. The aim of this work is to provide an introduction into nanotechnology for the s- entifically interested. However, such an enterprise requires a balance between comprehensibility and scientific accuracy. In case of doubt, preference is given to the latter. Much more than in microtechnology – whose fundamentals we assume to be known – a certain range of engineering and natural sciences are interwoven in nanotechnology. For instance, newly developed tools from mechanical engine- ing are essential in the production of nanoelectronic structures. Vice versa, - chanical shifts in the nanometer range demand piezoelectric-operated actuators. Therefore, special attention is given to a comprehensive presentation of the matter. In our time, it is no longer sufficient to simply explain how an electronic device operates; the materials and procedures used for its production and the measuring instruments used for its characterization are equally important. The main chapters as well as several important sections in this book end in an evaluation of future prospects. Unfortunately, this way of separating coherent - scription from reflection and speculation could not be strictly maintained. So- times, the complete description of a device calls for discussion of its inherent - tential; the hasty reader in search of the general perspective is therefore advised to study this work’s technical chapters as well.

Download or read book Reactive Ion Etching of Indium Phosphide based Heterostructures and Field effect Transistors Using Hydrogen Bromide Plasma written by Sambhulal Agarwala and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$sb2$O$sb3$. Selective HBr etching has been applied as the gate-recess process in the fabrication of InAlAs/InGaAs heterostructure FETs. Since less RIE-induced damage was observed in delta-doped structures, delta-doping was employed in all InP-based HFETs. The dc and rf device parameters of a typical 0.75-$mu$m gate-length transistor compare favorably with those of a corresponding device gate-recessed with a selective wet-etching technique. An extrinsic current-gain cutoff frequency of 150 GHz is obtained for a typical 0.2 $mu$m gate-length HFET device that was fabricated using selective HBr gate recess process. RIE-induced damage is characterized extensively using a variety of techniques such as AES, XPS, and SIMS analyses, Raman scattering, Hall measurements and Schottky characteristics. No significant degradation in surface properties is observed. The lattice damage in layer structures with 2DEG depth of greater than 20 nm was minimal. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs increases faster than the rate of introduction of damage. An exponential distribution of damage with 1/e penetration depth of about 7.8 nm has been obtained. The exponential distribution of defects suggests that either ion channeling or diffusion is the possible mechanism of defect production in regions deeper than the projected range.

Download or read book Extended Abstracts written by Electrochemical Society and published by . This book was released on 1992 with total page 918 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dry Etching Technology for Semiconductors written by Kazuo Nojiri and published by Springer. This book was released on 2014-10-25 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.

Download or read book Proceedings of the 9th International Symposium on the Physical Failure Analysis of Integrated Circuits written by and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 2002 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Processing of Semiconductors written by P.F. Williams and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.

Download or read book Proceedings of the International Symposium on the Physical Failure Analysis of Integrated Circuits written by and published by . This book was released on 2002 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microelectronics Technology and Devices SBMICRO 2003 written by J. A. Martino and published by The Electrochemical Society. This book was released on 2003 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Reactive Ion Etching in Silicon Tetrachloride silicon Tetrafluoride Plasmas for Gate Recess in Gallium Arsenide based MODFET Fabrication written by Daniel Gerard Ballegeer and published by . This book was released on 1992 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Inductively Coupled Plasma Reactive Ion Etching ICP RIE Nanofabrication Tool for High Resolution Pattern Transfer written by and published by . This book was released on 2001 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: High resolution lithography and directional ion etching are increasingly important for the fabrication of nanostructures. As part of this equipment proposal, a reactive ion etching system was purchased from Oxford Instruments for $305,000. The Army Research Office provided $274,000, and Caltech cost share amounted to $31,500. This instrument was connected and etching conditions were optimized for the fabrication of nanostructures in silicon, silicon dioxide and gallium arsenide. In this final progress report, we will present some examples of functional devices which have been defined by using this very capable ion etching system.