Download or read book High Voltage Buried Junction Vertical Silicon Carbide Field Effect Transitors written by Praveen Muraleedharan and published by . This book was released on 1997 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Silicon Carbide Buried Gate Junction Field Effect Transistor and Related Devices for High Temperature Applications written by Lisa V. Rozario and published by . This book was released on 1997 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide Vertical junction Field effect Transistors written by Kiyoshi Tone and published by . This book was released on 2002 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of a High Voltage Heterojunction Gate Silicon Carbide Vertical Field Effect Transistor written by Vijay Bantval and published by . This book was released on 1996 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Download or read book Electrical Characterizations of Silicon Carbide SiC Static Induction Transistors SITs and Vertical Channel Junction Field Effect Transistors VJFETs written by Sharmila Devi Magan Lal and published by . This book was released on 2004 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modern Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2023-09-18 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.
Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific Publishing Company. This book was released on 2016-12-12 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Download or read book Sic Materials And Devices Volume 2 written by Michael S Shur and published by World Scientific. This book was released on 2007-01-19 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Download or read book Process Technology for Silicon Carbide Devices written by Carl-Mikael Zetterling and published by IET. This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.
Download or read book 4h Sic Schottky Barrier Diodes and Junction Field Effect Transistors written by Denis Perrone and published by LAP Lambert Academic Publishing. This book was released on 2010-07 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs.
Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-03 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by . This book was released on 2004 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2003-10-08 with total page 938 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Download or read book CVD Diamond for Electronic Devices and Sensors written by Ricardo S. Sussmann and published by John Wiley & Sons. This book was released on 2009-01-09 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Synthetic diamond is diamond produced by using chemical or physical processes. Like naturally occurring diamond it is composed of a three-dimensional carbon crystal. Due to its extreme physical properties, synthetic diamond is used in many industrial applications, such as drill bits and scratch-proof coatings, and has the potential to be used in many new application areas A brand new title from the respected Wiley Materials for Electronic and Optoelectronic Applications series, this title is the most up-to-date resource for diamond specialists. Beginning with an introduction to the properties of diamond, defects, impurities and the growth of CVD diamond with its imminent commercial impact, the remainder of the book comprises six sections: introduction, radiation sensors, active electronic devices, biosensors, MEMs and electrochemistry. Subsequent chapters cover the diverse areas in which diamond applications are having an impact including electronics, sensors and actuators and medicine.
Download or read book Compact Modeling of Silicon Carbide SiC Vertical Junction Field Effect Transistor VJFET in PSpice Using Angelov Model and PSpice Simulation of Analog Circuit Building Blocks Using SiC VJFET Model written by Siddharth Purohit and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the development of compact model of novel silicon carbide (SiC) Vertical Junction Field Effect Transistor (VJFET) for high-power circuit simulation. An empirical Angelov model is developed for SiC VJFET in PSpice. The model is capable of accurately replicating the device behavior for the DC and Transient conditions. The model was validated against measured data obtained from devices developed by Mississippi Center for Advanced Semiconductor Prototyping at MSU and SemiSouth Laboratories. The modeling approach is based on extracting Angelov Equations Coefficients from experimental device characteristics using non linear fitting. The coefficients are extracted for different parameters (temperature, width, etc). Multi-Dimensional Interpolation Technique is used to incorporate the effect of more than one parameter. The models developed in this research are expected to be valuable tools for electronic designers in the future. The developed model was applied for investigating the characteristics of a few standard analog circuit blocks using SiC VJFET and Si JFET in order to demonstrate the capabilities of the model to reveal the relative advantages of one over the other. The selected circuits of interest were Voltage Follower, Common Source Amplifier, Current Source and Differential Amplifier. Simulations of analog circuit building blocks incorporating SiC VJFET showed better circuit functionality compared to their Si counterparts.
Download or read book Characterization and Modeling of High Voltage 4H SiC Junction Field effect Transistors written by Yi Wang and published by . This book was released on 2006 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt:
