Download or read book High Power Microwave Field Effect Transistor Development written by M. C. Driver and published by . This book was released on 1975 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: Work is concentrating on gallium arsenide devices rather than silicon to take advantage of the higher mobility. Two fabrication techniques are being used to construct arrays of unit cells on GaAs wafers. The first technique requires realignment of multiple photomasks and has given the best performance but is more costly. The second technique uses only one photomask and the gate is self-aligned between the source and drain metalization. Both unit cells are designed for approximately one watt. The realigned cell has an active length of 1500 microns, and measures about 8 mils by 12 mils. This cell was tested at 3.5 GHz with .6 watts output, 18 db of gain, and 15% efficiency. The efficiency would be much improved in a better test fixture. The self-aligned gate cell has an active length of 2500 microns and measures 12.5 mils by 17 mils. This cell was tested at 4 GHz with one watt of power output, 6 db of gain and 39% drain efficiency or 34.7% overall efficiency.
Download or read book Microwave Field Effect Transistor Development written by Herbert Goronkin and published by . This book was released on 1974 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of the program was to fabricate a 10-watt F-Band field effect transistor. Two approaches were taken. The multiple mask approach was found to be cumbersome and generally difficult to execute for a 2.5 micron geometry device. Rather than pursue this approach, a second design was initiated which involved self-registration of the source and drain with respect to the gate by means of a selective epitaxial region which comprises the electrical channel. Due to several unanticipated process difficulties (for which solutions have been identified) time did not allow for completion of the fabrication portion of the FET-11 effort. Preliminary findings indicate that the approach is feasible and should be expected to yield microwave power field effect transistors. (Author).
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microwave Field effect Transistors written by Raymond Sydney Pengelly and published by Wiley-Blackwell. This book was released on 1986 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microwave Field effect Transistors written by Raymond S. Pengelly and published by John Wiley & Sons. This book was released on 1982 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1976 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Download or read book Modulation doped Field Effect Transistors for High power Microwave Applications written by Ronald Waldo Grundbacher and published by . This book was released on 1997 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Download or read book Solid State Technology written by and published by . This book was released on 1977 with total page 1076 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials Research written by and published by Allied Publishers. This book was released on 2003 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed articles with reference to India.
Download or read book An Introductory Guide to EC Competition Law and Practice written by Valentine Korah and published by . This book was released on 1994 with total page 2354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Generation and Application of High Power Microwaves written by R.A Cairns and published by CRC Press. This book was released on 2020-08-18 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written at the graduate level, Generation and Application of High Power Microwaves discusses the basic physics of the generation of microwave and radiofrequency waves in the megawatt power range and the application of these ideas to a range of devices such as klystrons, gyrotrons, and free electron lasers. The book also contains chapters covering the transmission of the power through waveguides and the problems associated with mode conversion in transmission lines. The main application area covered is the heating and current drive in tokamaks and other devices for research into controlled nuclear fusion. Other applications of high power microwave technology are not neglected, and among those discussed are multiple charged ion and soft x-ray sources, electron spin resonance spectroscopy, advanced materials processing, millimeter wave radar, and supercolliders.
Download or read book Ferroelectric Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer Nature. This book was released on 2020-03-23 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Download or read book Microwave Journal written by and published by . This book was released on 1989 with total page 1358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
