Download or read book High Performance Thin Film Transistors Using Ni Silicide for Liquid Crystal Displays written by Jin Jang and published by . This book was released on 2000 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Ni-silicide of a sheet resistance of 7 Omega/square can be formed at 230 deg C on n(+) a-Si:H and thus can be applied to gate and source/drain contacts for high performance TFTs. Because of its low resistance it is possible to make a self-alignment between gate and source/drain which lead to a coplanar a-Si:H TFT having a low parasitic capacitance between them. The NiSi2 precipitates can be formed on a-Si:H at around 350 deg C and needlelike Si crystallites are grown as a result of the migration of the NiSi2 precipitates though a-Si:H network. Amorphous silicon can be crystallized at 500 deg C in 10 minutes in a modest electric field. The low temperature poly-Si TFT with a field effect mobility of 120 sq cm/Vs has been demonstrated using the low temperature poly-Si.
Download or read book Thin Film Transistors written by Cherie R. Kagan and published by CRC Press. This book was released on 2003-02-25 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt: A single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays.
Download or read book Amorphous Silicon Thin film Transistor Active matrix for Reflective Cholesteric Liquid Crystal Displays written by Jeong-Yeop Nahm and published by . This book was released on 2000 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Third Symposium on Thin Film Transistor Technologies written by Yue Kuo and published by The Electrochemical Society. This book was released on 1997 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Symposium on Thin Film Transistor Technologies written by and published by . This book was released on 1992 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Planarization of Amorphous Silicon Thin film Transistors for High aperture ratio and Large area Active matrix Liquid crystal Displays written by Je-Hsiung Lan and published by . This book was released on 1998 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin film transistors 1 Amorphous silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book Thin Film Transistors Polycrystalline silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book Instabilities in Amorphous Silicon Thin Film Transistors for Liquid Crystal Displays written by Wayne Allen Fowler and published by . This book was released on 1990 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book JJAP written by and published by . This book was released on 2006 with total page 878 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicide Thin Films Volume 402 written by Raymond T. Tung and published by . This book was released on 1996 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous advances have been made in the use of silicides as contacts and interconnects in micro-electronic devices and as active layers in sensors. A flourish of novel fabrication concepts and characterization techniques has led to high-quality silicide devices and a better understanding of the electronic and micrometallurgical properties of their interfaces. However, the shrinking physical dimensions of ULSI devices beyond the deep submicron regime now poses new and serious materials challenges for the development of manufacturable silicide processes. Scientists and engineers from materials science, physics, chemistry, device, processing and other disciplines come together in this book to examine the current issues facing silicide thin-film applications. Topics include: silicide fundamentals - energetics and kinetics; processing of silicide thin films; ULSI issues; CVD silicides; semiconducting silicides; processing of germano-silicide thin films; silicides and analogs for IR detection; interfaces, surfaces and epitaxy; novel structures and techniques and properties of silicide thin films.
Download or read book Frontiers In Electronics From Materials To Systems 1999 Workshop On Frontiers In Electronics written by Serge Luryi and published by World Scientific. This book was released on 2000-08-07 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapid pace of the electronic technology evolution compels a merger of technical areas such as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology. The 1999 Workshop on Frontiers in Electronics gathered experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms. The proceedings addresses controversial issues, provocative views, and visionary outlooks. Also included are discussions on the future trends, the directions of electronics technology and the market pulls, as well as the necessary policy and infrastructure changes.
Download or read book Thin Film Amorphous Silicon Transistors for Liquid Crystal Displays written by Steven Craig Anderson and published by . This book was released on 1988 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Polycrystalline Silicon Thin Film Transistors for Active Matrix Guest host Liquid Crystal Displays written by Roberto Enrique Proaño and published by . This book was released on 1990 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanocrystalline Silicon Thin Film Transistor written by Mohammad-Reza Esmaeili-Rad and published by . This book was released on 2008 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) has been used in active matrix liquid crystal displays (LCDs) and medical x-ray imagers, in which the TFT acts as pixel switches. However, instability of a-Si:H TFT is a major issue in applications where TFTs are also required to function as analogue circuit elements, such as in emerging organic light emitting diode (OLED) displays. It is known that a-Si:H TFT shows drain current degradation under electrical operation, due to two instability mechanisms: (i) defect creation in the a-Si:H active layer, and (ii) charge trapping in the gate dielectric. Nanocrystalline silicon (nc-Si) TFT has been proposed as a high performance alternative. Therefore, this thesis focuses on the design of nc-Si TFT and its outstanding issues, in the industry standard bottom-gate structure. The key for obtaining a stable TFT lies in developing a highly crystalline nc-Si active layer, without the so-called amorphous incubation layer. Therefore, processing of nc-Si by plasma enhanced chemical vapor deposition (PECVD) is studied and PECVD parameters are optimized.
Download or read book Thin Film Transistors Using Nanocrystalline Silicon from Metal Induced Growth written by Xueli Hao and published by . This book was released on 2012 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film transistors (TFTs) have been well developed in over six decades. Nowadays, hydrogenated amorphous silicon (a-Si:H) has been largely used for active matrix liquid crystal display (AMLCD) in the industrial field. At the same time, nanocrystalline silicon (nc-Si) TFT has attracted more attention due to its better quality than a-Si and low costs. This thesis focused on the fabrication of nc-Si TFTs using metal-induced growth (MIG), which has been utilized in solar cell fabrication and nanowire growth. The 500 ©5 thickness palladium (Pd) was evaporated as the metal catalyst on the silicon substrate covered with silicon dioxide. The nc-Si films were deposited using two-step DC sputtering at 625 °C. The Pd was consumed to form Pd2Si at 50 W low power step, which provides the nucleation sites for nc-Si growth. Then, nc-Si films can be grown at a high deposition rate which was obtained in the 150 W high power step.^As a result, the nc-Si with around 1000 nm thickness was deposited as the active channel of the TFTs by 45 min low power and 30 min high power sputtering. The output and transfer characteristics of the TFTs were illustrated in the thesis. The field effect mobility and the threshold voltage were calculated. The performance was difficult to get saturation due to the high leakage current. The field effect mobility values were 0. 3 to 0. 6 cm2/V. s, which were relatively low. The main reasons are the existence of the grain boundaries and the intragrain defects in the channel, the metal contamination introduced by MIG, and the thick channel layer. The threshold voltage values varied from 1. 3 V to 1. 9 V, which were partially affected by the short length effect (L= 5, 10 ℗æm). In addition, the total resistances of semiconductor and metal-semiconductor contact were measured using the transmission line method (TLM).^The linear TLM and the circular TLM were both used to calculate the contact resistance, transfer length, and the specific contact resistance. The results of three kinds of samples, MIG with anneal, MIG without anneal, and non MIG, are presented and compared. The MIG with anneal samples show much lower contact resistance than that of MIG without anneal samples. The quality of the nc-Si and the ohmic contact of the junction are improved after annealing at 700 °C for 2 hours in forming gas (15% H2 and 85% N2).
Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
