Download or read book High frequency Indium Gallium Phosphide gallium Arsenide Heterojunction Bipolar Transistors written by David Abbas Ahmari and published by . This book was released on 1996 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High frequency Indium Phosphide indium Gallium Arsenide Heterojunction Bipolar Transistors written by Michael Thomas Fresina and published by . This book was released on 1993 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Analysis of and Process Development for High frequency Indium Gallium Phosphide gallium Arsenide Heterojunction Bipolar Transistors written by Allen William Hanson and published by . This book was released on 1994 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: The In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs materials system has been investigated for use in heterojunction bipolar transistor applications. This material possesses several properties which make it attractive as a potential replacement for AlGaAs as the wide band gap emitter material. These properties include the availability of highly selective etches, an energy band alignment favorable for high injection efficiency devices, and the absence of DX centers. A comparison of the dc characteristics of MOCVD-grown, Npn In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs single- and double-heterojunction bipolar transistors (SHBTs and DHBTs, respectively) with carbon-doped bases is presented. A base doping level of 2.5 $\times$ 10$\sp{19}$ cm$\sp{-3}$ was employed in both device structures, resulting in a base sheet resistance of 500 $\Omega$/sq. Common-emitter current gains as high as 210 and 150 were measured for the SHBTs and DHBTs respectively. Results of a dc performance optimization study indicate that a 15 to 25 A undoped setback layer at the emitter-base junction provides optimal common-emitter current gain. The DHBTs exhibited a 40% improvement in common-base breakdown voltage compared to SHBTs (25 V versus 18 V), indicating that In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs DHBTs may prove suitable for power device applications. Details concerning the design and development of a high-frequency HBT process utilizing this materials system are also given. A unity current gain cutoff frequency, $f\sb{t}$, of 14.6 GHz was obtained for a double heterojunction In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs HBT. This device featured a 1 $\mu$m In$\rm\sb{0.5}Ga\sb{0.5}$P collector region and exhibited common-base breakdown voltage $BV\sb{CBO}$ of 45 V. The high-frequency device characteristics of the DHBTs are presented, and an estimation of the high-field electron velocity for n-type In$\rm\sb{0.5}Ga\sb{0.5}$P is determined from the results.

Download or read book DESIGN OF GALLIUM ARSENIDE AND INDIUM PHOSPHIDE BASED HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH SPEED PERFORMANCE GALLIUM ARSENIDE INDIUM PHOSPHIDE written by JUNTAO HU and published by . This book was released on 1991 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt: latter devices are 2.17, 1.02 and 1.11 ps, respectively.

Download or read book High Performance Indium Gallium Phosphide gallium Arsenide Heterojunction Bipolar Transistors written by David Abbas Ahmari and published by . This book was released on 1999 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Fabrication of High performance Indium Gallium Phosphide gallium Arsenide Heterojunction Bipolar Transistors written by Michael Thomas Fresina and published by . This book was released on 1996 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: The heterojunction bipolar transistor (HBT) is a device whose time has come. The high gains, linearity, power efficiencies, current handling capabilities, and speeds available with HBT technology make this device attractive for a wide variety of applications from wireless communications to high-speed analog-to-digital converters. Companies across the United States are investing millions of dollars in developing HBT products and manufacturing capabilities. A manufacturable fabrication process for state-of-the-art InGaP/GaAs HBTs has been established. The process features nonalloyed emitter metal, self-aligned emitter and collector etches, self-aligned base metal, mesa isolation, polyimide planarization, and an air bridge metallization. A citric acid-based, selective GaAs etch has been developed for use in the self-aligned emitter etch/base metallization process. The etch has demonstrated excellent control and the uniformity necessary for high-yield wafer processing. The citric acid etch has also been used to implement the selective collector etch which minimizes the base-collector parasitic capacitance. An evaporated gold air bridge process has been developed and replaces a plated gold process, thereby improving yield and quality. State-of-the-art InGaP/GaAs HBTs have been developed. A baseline device structure and the standard fabrication process have consistently produced devices with a common-emitter current gain $beta>50,$ a common-emitter breakdown voltage $BVsb{rm CEO}>10$ V, a current gain cutoff frequency $fsb{rm T}>50$ GHz, and a maximum frequency of oscillation $fsb{rm max}>100$ GHz. Advanced device structures have been investigated for improving device performance and $fsb{rm T}$'s as high as 93 GHz, and $fsb{rm max}$'s as high as 197 GHz have been achieved. For power applications, InGaP/GaAs double heterojunction bipolar transistors (DHBTs) were analyzed and a composite collector structure has been optimized to improve DHBT operating characteristics. Finally, a submicron, self-aligned emitter ledge structure has been demonstrated, which is formed using wet chemical selective etches and does not require additional masking layers as do present ledge fabrication technologies. Presently, the leading HBT material technology is AlGaAs/GaAs. However, the InGaP/GaAs material system offers significant advantages in device performance and manufacturability. The band alignment of InGaP/GaAs improves device performance and the absence of aluminum in the emitter improves noise characteristics and long-term reliability. In addition, the availability of highly selective etch chemistries makes it easier to manufacture InGaP/GaAs HBTs. This work demonstrates the manufacturability and performance potential of InGaP/GaAs HBTs.

Download or read book Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors written by Shahzad Akbar and published by . This book was released on 1989 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Indium Gallium Phosphide Gallium Arsenide Hole Barrier Bipolar Transistors written by Carlos Enrique Saavedra-Munoz and published by . This book was released on 1995 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

Download or read book Experimental Validation of Submicron Scaling of Ultra High Speed Indium Phosphide Indium Gallium Arsenide Single Heterojunction Bipolar Transistors written by Walid Mahmoud Hafez and published by . This book was released on 2003 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Fabrication of Laterally Etched Undercut Indium Gallium Phosphide gallium Arsenide Heterojunction Bipolar Transistors written by Dennis Wayne Scott and published by . This book was released on 1999 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Parameter Extraction of Aluminum Gallium Arsenide Gallium Arsenide Heterojunction Bipolar Transistors written by Seonghearn Lee and published by . This book was released on 1992 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design Rules and HSPICE Thermal Electrical Model of InGaP GaAs HBT for Analog to Digital Conversion Application written by Jinghui Mu and published by . This book was released on 1997 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Submicron Scaling of Indium Phosphide indium Gallium Arsenide Heterojunction Bipolar Transistors Toward Terahertz Bandwidths written by Walid Mahmoud Hafez and published by . This book was released on 2005 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Minority Carrier Properties in Gallium Arsenide Characterized by DC and High Frequency Characteristics of Heterojunction Bipolar Transistors written by Dong Myong Kim and published by . This book was released on 1993 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Submicron Scaling in Indium Phosphide indium Gallium Arsenide Single Heterojunction Bipolar Transistors written by Michael Leonard Hattendorf and published by . This book was released on 2002 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors written by Amish J. Shah and published by . This book was released on 1991 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: