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Book High Field Effects in Indium Antimonide

Download or read book High Field Effects in Indium Antimonide written by Stuart Pollard Jackson and published by . This book was released on 1960 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Magnetic Field Effects on the High Frequency Resistivity in Indium Antimonide

Download or read book Magnetic Field Effects on the High Frequency Resistivity in Indium Antimonide written by Paul Gilbert Burgan and published by . This book was released on 1969 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Relaxation Phenomena on Indium Antimonide Surfaces at High Electric Fields

Download or read book Relaxation Phenomena on Indium Antimonide Surfaces at High Electric Fields written by Howard R. Huff and published by . This book was released on 1968 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: High voltage pulsed field effect experiments were performed on two surfaces of n-type InSb which were previously exposed to a mixture of chlorine and air. The observed relaxation phenomena were attributed to an emission of electrons from a 'slow' surface state into the conduction band. These phenomena were adequately described by a quantum mechanical tunnel equation. A 'slow' surface state was located approximately 0.04 eV below the conduction band edge on both surfaces. High voltage alternating current field effect experiments were concurrently performed on the same surfaces. (Author).

Book Relaxation Phenomena at High Electric Field on the Surfaces of Indium Antimonide

Download or read book Relaxation Phenomena at High Electric Field on the Surfaces of Indium Antimonide written by Howard Huff and published by . This book was released on 1966 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was found that high transverse pulsed electric fields applied to indium antimonide surfaces brought about tunneling currents which are extracted through a surface film to the semiconductor bulk. A slow surface state has been located approximately 0.06 eV below the conduction band edge on the (111) A surface of n-InSb. (Author).

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 988 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Noise Emission from Indium Antimonide

Download or read book Noise Emission from Indium Antimonide written by Arthur Howard Thompson and published by . This book was released on 1969 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Advanced Indium Arsenide Based HEMT Architectures for Terahertz Applications

Download or read book Advanced Indium Arsenide Based HEMT Architectures for Terahertz Applications written by N. Mohankumar and published by CRC Press. This book was released on 2021-09-29 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.

Book Electric Field Effect on the Magnetoresistance of Indium Arsenide Surfaces in High Magnetic Fields

Download or read book Electric Field Effect on the Magnetoresistance of Indium Arsenide Surfaces in High Magnetic Fields written by Shinji Kawaji and published by . This book was released on 1967 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Electric field effect on the electrical resistance of the surfaces of p-type indium arsenide was studied at 4.2 and 77K in magnetic fields ranging up to 110 koe. In the absence of a magnetic field such surfaces (prepared by crystallographic cleavage or by etching) were found to be n-type. Their field effect mobility was found to be independent of temperature. In high magnetic fields, the electrons introduced by the capacitively applied electric field increased only slightly the electrical conduction of the etched surfaces at both temperatures and that of the cleaved surfaces at 77K; but they caused nearly no change in the electrical conduction of the cleaved surfaces at 4.2K. It was concluded that in the surface conducting layer the electrons are degenerate and their kinetic energy of the motion perpendicular to the surface corresponds to the lowest quantized level in the narrow surface charge potential well. In high magnetic fields, at 4.2K, the results with the cleaved surfaces were attributed to a 'freeze out' of the carriers (whose momentum perpendicular to the surface is quantized in the surface potential well) due to the quantization of the momentum in the orbital parallel to the surface. The lack of complete 'freeze out' in the etched surfaces was attributed to the microscopic two-dimensional heterogeneities in the surface potential structure. (Author).

Book The Field Effect in Vacuum Deposited Indium Antimonide Thin Films and the Effects of Residual Gases During Deposition and Annealing

Download or read book The Field Effect in Vacuum Deposited Indium Antimonide Thin Films and the Effects of Residual Gases During Deposition and Annealing written by Richard Holmes Hartley and published by . This book was released on 1970 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book High Field Resistivity of Indium Antimonide

Download or read book High Field Resistivity of Indium Antimonide written by Robert L. Gentry and published by . This book was released on 1968 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Surface States on the  lll  Surface of Indium Antimonide

Download or read book Surface States on the lll Surface of Indium Antimonide written by John Litchfield Davis and published by . This book was released on 1965 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Measurements of the conductivity, photoconductivity and high frequency field effect mobility have been made on the surface of indium antimonide as a function of the charge applied to a field electrode adjacent to the sample. Using the theory of the surface space charge region and the experimental data, values of trapped charge as a function of surface potential were obtained. The data indicates two surface states, one near the valence band edge and one near the conduction band edge. Further measurements gave information on the capture probabilities of the states. A model of the surface states is proposed on the basis of the data. (Author).

Book Nuclear Science Abstracts

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Handbook of Thin Films  Five Volume Set

Download or read book Handbook of Thin Films Five Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-11-17 with total page 3451 pages. Available in PDF, EPUB and Kindle. Book excerpt: This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.

Book Growth of Crystals

    Book Details:
  • Author : Kh.S. Bagdasarov
  • Publisher : Springer Science & Business Media
  • Release : 2012-12-06
  • ISBN : 1461536626
  • Pages : 271 pages

Download or read book Growth of Crystals written by Kh.S. Bagdasarov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Papers from the Sixth All-Union Conference on Growth of Crystals comprise Volume 16 of this series. The articles were chosen with a view to more fully elucidate the basic problems of crystal growth as reflected in domestic and foreign reviews and in original studies. This volume consists of six parts. Part I is devoted to mechanisms of crystal growth that are important for production of materials with given properties. This part examines the temporal evolution of an inhomogeneous state and the array of semicellular and eutectic structures during microstructure formation, the effect of impurity on the nonequi librium vacancy concentration in a growing crystal, and the role of soluble and insoluble impurities in the birth and growth of crystals. Part II deals with the synthesis and electrophysical properties of novel solid electrolytes that are promis ing for practical use, analysis and correlation of the large amount of data on growth by the Bridgman-Stockbar ger method of single crystals of fluorite phases far from stoichiometry, and the hydrothermal chemistry and growth of hexagonal germanium dioxide.

Book Canadian Journal of Physics

Download or read book Canadian Journal of Physics written by and published by . This book was released on 1963-05 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Large Order Behaviour of Perturbation Theory

Download or read book Large Order Behaviour of Perturbation Theory written by J.C. Le Guillou and published by Elsevier. This book was released on 2012-12-02 with total page 595 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is concerned with the determination of the behaviour of perturbation theory at large orders in quantum mechanics and quantum field theory, and its application to the problem of summation of perturbation series. Perturbation series in quantum field theory and in many quantum mechanics models are only asymptotic and thus diverge for all values of the expansion parameter. Their behaviour at large orders provides information about whether they define the theory uniquely (the problem of Borel summability). It suggests methods to extract numerical information from the series when the expansion parameter is not small. The articles reprinted here deal with the explicit evaluation of large-order behaviour in many quantum mechanics and field theory models. The large-order behaviour is related to barrier penetration effects for unphysical values of the expansion parameter, which can be calculated by WKB or instanton methods. The calculation of critical exponents of &fgr;4 field theory is presented as a practical application.