Download or read book High Efficiency Two stage Gan Power Amplifier with Improved Linearity written by Amreen Khan and published by . This book was released on 2013 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trade-off between linearity and efficiency is the key limiting factor to wideband power amplifier design. Current wireless research focuses much of its effort on building power amplifiers with the two aforementioned criteria going hand in hand to build an optimal design. This thesis investigates the sources of nonlinearity associated with GaN high electron mobility transistors (HEMT), and their subsequent effects on the linearity metrics of the power amplifier.

Download or read book AlGaN GaN HEMT power amplifiers with optimized power added efficiency for X band applications written by Jutta Kühn and published by KIT Scientific Publishing. This book was released on 2011 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Download or read book Linearization Techniques for Integrated CMOS Power Amplifiers and a High Efficiency Class F GaN Power Amplifier written by Sangwon Ko and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: My study was on linearization techniques for integrated CMOS power amplifiers and a highefficiency GaN power amplifier. My study proposes two types of predistortion linearizationcircuits compatible with CMOS processes. Dynamic impedance lines of the nonlinearitygeneration circuits of the proposed predistorters were analyzed and the equivalent circuits of thenonlinearity generation circuit were obtained from the large signal simulation. Characteristics of the predistorter circuits were analyzed and compared. The phase distortion characteristic of the cascode CMOS power amplifier was also investigated. The predistorter circuits were fully integrated into CMOS power amplifiers. Three kinds of CMOS power amplifier were fabricated and the small signal characteristics and the large signal characteristics of the CMOS power amplifier were measured. Results showed that the third-order intermodulation distortion of the power amplifier was improved by the integrated predistorters. The developed predistorters can be applied to both the CMOS process and the compound semiconductor process. The predistorters also have low loss and low power consumption characteristics. My study also describes a high efficiency power amplifier using a wide bandgap GaN HEMTdevice. The dc and ac characteristics of GaN HEMT device were measured and modeled using theCurtice cubic model. The GaN HEMT device was mounted on a high dielectric constant substrate and class F configuration was implemented at the output of the GaN HEMT device. Results showed high efficiency operation of the power amplifier using a wide bandgap GaN device at microwave frequency.

Download or read book Efficiency Enhancement of Linear GaN RF power Amplifiers Using the Doherty Technique written by and published by kassel university press GmbH. This book was released on with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Millimeter Wave GaN Power Amplifier Design written by Edmar Camargo and published by Artech House. This book was released on 2022-05-31 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.

Download or read book Development of High Efficiency and High Linearity Power Amplifiers written by Mohamed Magdi Ahmed Darwish and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Power amplifiers typically dominate transmitter and system characteristics. They have the highest DC power consumption, power dissipation, and heat dissipation. Power MMICs have the largest chip area which means higher cost. Modern communication digital modulation techniques require that PAs should have high linear characteristics. On the other hand, PAs are required to be efficient to decrease power consumption and to extend the operation life of battery operated devices. Gallium Nitride PAs became the focus of industry in the last decade. They provide the highest power density among other technologies, as well as providing high efficiency and are suitable for wide bandwidth applications. On the other hand, they suffer from soft compression, AM/AM and AM/PM distortions at higher levels compared to GaAs and Si based devices. Also, since GaN is considered a new technology power gain decreases for mm-wave frequencies. In this Ph.D. research, we address 3 problems: linearity, efficiency and gain of mm-wave power amplifiers. We present 4 contributions; First, we demonstrate the design of a linear and high efficient power amplifier (PA) by using different gate bias voltages for parallelly combined Gallium Nitride (GaN) high electron mobility transistors (HEMTs). The experimental results show that the linearized PA achieves the gain flatness of 0.3 dB over a 35 dB power range and has a measured sharp output power at 1 dB compression point (P1dB) of 38.5 dBm, less than 2 dB below the saturated power (P[subscript SAT]). The measured adjacent channel power ratio (ACPR) of the proposed linearized PA shows up to 8 dB improvements over the PA biased ~ class A (47% Idss) Second, we propose a new modulating load range for a Doherty power amplifier (DPA) that will maintain maximum drain voltage swing and consequently peak efficiency in over 6-dB power back-off (PBO). At 6-dB PBO, the real part of the new modulating load seen by the main amplifier is less than 2*R[subscript opt]. The new load range allows for the design of a compact, low loss output matching and combiner circuit and a simple single drain bias line for the main and auxiliary amplifiers. The proposed 2-stage DPA using the new modulating loads is designed at 15 GHZ in a 0.15 [mu]m enhancement mode (E-mode) Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The proposed DPA achieves a measured P[subscript sat] of 27 dBm, a peak power added efficiency (PAE) of 41% and a PAE of 34% at 6 dB PBO with a gain of 17 dB. Third, we propose an extended range Doherty power amplifier (DPA) to achieve high efficiency at 9-dB power back-off (PBO) using a novel loading impedance range. The proposed loading impedance range enables the auxiliary transistor to deliver more current so that symmetric devices can be used in the DPA and results in a compact and low loss output combining circuit. A 20-Watt DPA using Gallium nitride high electron mobility transistors (GaN HEMTs) at 3.5 GHz has been developed to demonstrate the concept. Measurements show power added efficiency (PAE) of 69% at 42.9 dBm saturation output power, PAE of 55% at 9-dB PBO, and gain of 12 dB. We believe our proposed DPA has the highest 9-dB PBO PAE of 55% among reported GaN DPA’s. Finally, we introduce an inductive feedback technique to enhance the gain of mm-wave power amplifiers. A 3-stage 60 GHz PA was designed with 22 dB gain and output power of almost 1-watt.

Download or read book Adaptive Phase Tuning to Improve the Linearity of Power Amplifiers Under Load Mismatches written by Arvind Keerti and published by . This book was released on 2006 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave High Power High Efficiency GaN Amplifiers for Communication written by Subhash Chandra Bera and published by Springer Nature. This book was released on 2022-11-29 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.

Download or read book Partitioning Design Approach for the Reliable Design of Highly Efficient RF Power Amplifiers written by Roshanak Lehna and published by kassel university press GmbH. This book was released on 2017-11-13 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: The modern wireless communication systems require modulated signals with wide modulation bandwidth. This, in turns, requires signals with very high dynamic range and peak-to-average power ratio (PAPR). This means that the amplifier in the base-station has to work at a power back-off as large as the dynamic range of the signal, so that the amplifier has a high linearity in this region. For the standard single-stage amplifiers, this large power back-off reduces the efficiency dramatically. In this work, a three-way Doherty power amplifier (DPA) aiming at high power efficiency within a dynamic range of 9.5 dB, is designed and fabricated using partitioning design approach. The partitioning design approach decomposes a complex design task into small-sized, well-controllable, and verifiable subcircuits. This advanced straight forward method has shown very promising results. Using this design approach, a three-way DPA has been designed to demonstrate the advantages of this reliable design technique as well. Based on the design of a single-stage power amplifier and proposing a novel output power combiner, a 6 W three-way DPA has been designed which allows the mandatory load modulation principle in three-way DPA structures to be realized with simpler elements, whereas the design of a standard Doherty combiner would have been very challenging and not practical due to the extremely small value of its characteristic line impedance. The proposed combiner is calculated for a three-way DPA with 2-mm AlGaN/GaN-HEMTs. The simulation result shows a very good load modulation for the amplifier, which confirms the theoretical expectation for a three-way DPA. The efficiency of the designed 6 W three-way DPA at large back-off shows very promising values compared to recently reported amplifiers. The measured IMD3 products confirm the good linearity of the amplifier as well. Accordingly, the proposed power combiner and the design strategy are recommended to be used as the preferred option for designing three-way DPA structures with very high output power.

Download or read book Large signal Modeling of GaN HEMTs for Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and published by kassel university press GmbH. This book was released on 2008 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Wideband GaN Microwave Power Amplifiers with Class G Supply Modulation written by Nikolai Wolff and published by Cuvillier Verlag. This book was released on 2019-02-06 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous and rapidly growing demand for mobile communication access led to a major increase in the number of base stations worldwide to provide sufficient coverage and quality of service. As a consequence, mobile communication networks have become a significant contributor to global energy consumption. Several advanced topologies for efficiency improvement of RF power amplifiers have been developed. Modulating the amplifier’s supply voltage according to the variation of the envelope signal is one of the most promising concepts. This topology is investigated here, with an architecture that switches the supply voltage of the power amplifier in discrete levels with a class-G supply modulator. The thesis addresses comprehensively all aspects of class-G supply modulation. Several prototype designs were realized to validate the theory and to gain experience on the influence of the corresponding parameters. These include the discrete supply voltage levels, the switching thresholds, and the interface between the RF PA and the class-G supply modulator. Efforts both on improving the RF power amplifiers and developing several class-G supply modulators were also involved. This work covers the progress up to a PA module that provides an instantaneous modulation bandwidth of 120 MHz and achieves better performance than state-of-the art continuous supply modulation systems. Class-G supply modulated RF power amplifiers based on gallium nitride technology exhibit a strong nonlinear behavior, therefore linearization is required. For this purpose, the linearization with digital predistortion based on behavioral models is optimized for the class-G topology and a novel predistorter model is developed and analyzed.

Download or read book High Efficiency Load Modulation Power Amplifiers for Wireless Communications written by Zhancang Wang and published by Artech House. This book was released on 2017-06-30 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: This cutting-edge resource presents a complete and systematic overview of the practical design considerations of radio frequency (RF) high efficiency load modulation power amplifiers (PA) for modern wireless communications for 4G and beyond. It provides comprehensive insight into all aspects of load modulation PA design and optimization not only covering design approaches specifically for passive and active load modulation operation but also hybrid with dynamic supply modulation and digital signal processing algorithms required for performance enhancement. Passive load impedance tuner design, dynamic load modulation PA, active load modulation PA and Doherty PA design for efficiently enhancement are explained. Readers find practical guidance into load modulation PA design for bandwidth extension, including video bandwidth enhancement techniques, broadband dynamic load amplifiers, topology selection, design procedures, and network output. This book presents the evolution and integration of classical load modulation PA topologies in order to meet new challenges in the field.

Download or read book Switchmode RF and Microwave Power Amplifiers written by Andrei Grebennikov and published by Academic Press. This book was released on 2021-03-19 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt: Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. Provides a complete history of high-efficiency Class E and Class F techniques Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations

Download or read book High Linearity and High Efficiency RF MMIC Power Amplifiers in AlGaN GaN HEMT Technology written by Shouxuan Xie and published by . This book was released on 2004 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern wireless communication systems require high performance RF power amplifiers with high linearity and high efficiency. Class B power amplifiers can achieve relatively high efficiency with good bandwidth, and potentially low distortion.

Download or read book High Efficiency and High Linearity Power Amplifiers for 5G Wireless Communications written by Duy Phuong Nguyen and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: With the increasing demand for higher data rates and the crowding of the cellular bands below 3 GHz, researchers are looking to the millimeter-wave frequency spectrum to define the next generation of mobile broadband communications. One of the biggest challenges in implementing a millimeter-wave solution is the low efficiency of commercially available millimeter-wave power amplifiers. Furthermore, the monolithic millimeter-wave integrated circuit (MMIC) power amplifiers also need to have high power with reasonable gain, good linearity and maintain a compact chip size. In Chapter 1 and Chapter 2 of this dissertation, a compact high efficiency Ka-band power amplifier and a highly linear amplifier using second harmonic injection will be demonstrated. The requirements are even more stringent when the amplifiers are deployed in wireless systems that have high peak to average power ratio (PAPR). Among the most popular solutions to achieve high efficiency at power back-off is the Doherty architecture. Thus far, Doherty power amplifiers have been primarily implemented in the spectrum below 3 GHz for cellular base stations. Very few millimeter-wave Doherty PA’s have been reported to date. The conventional Doherty architecture has several inherent drawbacks that cause low efficiency, occupy large chip size and limit the performance bandwidth. Therefore, in our work, we propose four different Doherty amplifier topologies improve the DPA performance: 1) An ultra-compact Doherty amplifier using 3-dimensional broadside coupler 2) A wideband reconfigurable Doherty amplifier 3) A high power density stacked-FET Doherty power amplifier with asymmetrical gate bias 4) A high efficiency asymmetrical Doherty power amplifier using novel load modulation scheme based on load-pull data. All the proposed DPAs are fabricated in a 0.15-[mu]m enhancement mode (E-mode) Gallium Arsenide (GaAs) process. The proposed techniques and experimental results will be discussed in Chapter 3, 4, 5 and 6.The content of this dissertation is a compilation of 18 manuscripts, all of which I am the author or co-author. The titles, publishers and publication dates of the manuscripts are listed on page xii and xiii in this dissertation.

Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Download or read book A Doherty Power Amplifier with Extended Bandwidth and Reconfigurable Back off Level written by Yu-Ting David Wu and published by . This book was released on 2013 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wireless standards are designed to be spectrally efficient to address the high cost of licensing wireless spectra. Unfortunately, the resulting signals have a high peak-to-average ratio that reduces the base station power amplifier efficiency at the back-off power level. The wasted energy is converted to heat that degrades the device reliability and increases the base-station's carbon footprint and cooling requirements. In addition, these new standards place stringent requirements on the amplifier output power, linearity, efficiency, and bandwidth. To improve the back-off efficiency, a Doherty amplifier, which uses two device in parallel for back-off efficiency enhancement, is deployed in a typical base station. Unfortunately, the conventional Doherty amplifier is narrowband and thus cannot satisfy the bandwidth requirement of the modern base station that needs to support multiple standards and backward compatibility. In this thesis, we begin by studying the class F/F-1 high efficiency mode of operation. To this end, we designed a narrowband, harmonically-tuned 3.3 GHz, 10 W GaN high efficiency amplifier. Next, we investigate how to simultaneously achieve high efficiency and broad bandwidth by harnessing the simplified real frequency technique for the broadband matching network design. A 2 to 3 GHz, 45 W GaN amplifier and a 650 to 1050 MHz, 45 W LDMOS amplifier were designed. Finally, we analyze the conventional Doherty amplifier to determine the cause of its narrow bandwidth. We find that the narrow bandwidth can be attributed to the band-limited quarter-wave transformer as well as the widely adopted traditional design technique. As an original contribution to knowledge, we propose a novel Doherty amplifier configuration with intrinsically broadband characteristics by analyzing the load modulation concept and the conventional Doherty amplifier. The proposed amplifier uses asymmetrical drain voltage biases and symmetrical devices and it does not require a complex mixed-signal setup. To demonstrate the proposed concept in practice, we designed a 700 to 1000 MHz, 90 W GaN broadband Doherty amplifier. Moreover, to show that the proposed concept is applicable to high power designs, we designed a 200 W GaN broadband Doherty amplifier in the same band. In addition, to show that the technique is independent of the device technology, we designed a 700 to 900 MHz, 60 W LDMOS broadband Doherty amplifier. Using digital pre-distortion, the three prototypes were shown to be highly linearizable when driven with wideband 20 MHz LTE and WCDMA modulated signals and achieved excellent back-off efficiency. Lastly, using the insights from the previous analyses, we propose a novel mixed-technology Doherty amplifier with an extended and reconfigurable back-off level as well as an improved power utilization factor. The reconfigurability of the proposed amplifier makes it possible to customize the back-off level to achieve the highest average efficiency for a given modulated signal without redesigning the matching networks. A 790 to 960 MHz, 180 W LDMOS/GaN Doherty amplifier demonstrated the extended bandwidth and reconfigurability of the back-off level. The proposed amplifier addresses the shortcomings of the conventional Doherty amplifier and satisfies the many requirements of a modern base station power amplifier.