Download or read book Heterostructure Epitaxy and Devices HEAD 97 written by Peter Kordos and published by Springer Science & Business Media. This book was released on 1998-03-31 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.
Download or read book Heterostructure Epitaxy and Devices HEAD 97 written by Peter Kordos and published by Springer. This book was released on 1998-04-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.
Download or read book Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2004-01-22 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.
Download or read book American Book Publishing Record Cumulative 1998 written by R R Bowker Publishing and published by . This book was released on 1999-03 with total page 1312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heterostructure Epitaxy and Devices written by Josef Novák and published by Springer. This book was released on 1996-04-30 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterostructure Epitaxy and Devices contains a selection of the papers contributed to the NATO Advanced Research Workshop of the same name, held near Bratislava in October 1995. Some of the leading research teams in the world present their latest findings, which are grouped under five headings: Epitaxial growth; Heterostructures; Composite systems; Characterization; and Devices.
Download or read book The British National Bibliography written by Arthur James Wells and published by . This book was released on 1999 with total page 1778 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Index of Conference Proceedings written by British Library. Document Supply Centre and published by . This book was released on 1998 with total page 890 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Download or read book ICONO 2001 written by and published by SPIE-International Society for Optical Engineering. This book was released on 2002 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume examines fundamental aspects of laser-matter interaction and physics of nanostructures.
Download or read book EDMO written by and published by . This book was released on 2002 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductors written by and published by . This book was released on 2004 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Cumulated Index to the Books written by and published by . This book was released on 1999 with total page 1132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heterostructure Devices and Epitaxial Growth Techniques written by Satoshi Hiyamizu and published by . This book was released on 1994 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book South African Journal of Science written by and published by . This book was released on 2002 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Book Review Index written by and published by . This book was released on 2003 with total page 1520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vols. 8-10 of the 1965-1984 master cumulation constitute a title index.
Download or read book International Workshop on Heterostructure Epitaxy and Devices written by NATO. and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by John Wilfred Orton and published by . This book was released on 2015 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
