Download or read book Heterojunction and Dielectrically Insulated Gate InP Field Effect Transistors written by Cynthia Marie Hanson and published by . This book was released on 1988 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book InGaAs InAlAs Lattice mismatched Heterojunction Insulated gate Field Effect Transistors Grown on GaAs written by Peter Chu and published by . This book was released on 1990 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technical Reports Awareness Circular TRAC written by and published by . This book was released on 1988-06 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1988 with total page 1132 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Official Gazette of the United States Patent and Trademark Office written by and published by . This book was released on 1998 with total page 1114 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Chemistry of III V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Download or read book Integration of PIN Photodetectors and FETs in InGaAs InAlAs InP written by Qi Fan and published by . This book was released on 1989 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metallurgical Coatings 1987 written by R. C. Krutenat and published by . This book was released on 1987 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Seventh Annual Conference on the Physics of Compound Semiconductor Interfaces written by Robert S. Bauer and published by . This book was released on 1980 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Speed Heterostructure Devices written by and published by Academic Press. This book was released on 1994-07-06 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. - The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed - Offers a complete, three-chapter review of resonant tunneling - Provides an emphasis on circuits as well as devices

Download or read book Fundamentals of Tunnel Field Effect Transistors written by Sneh Saurabh and published by CRC Press. This book was released on 2016-10-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.

Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optoelectronic Integration Physics Technology and Applications written by Osamu Wada and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: As we approach the end of the present century, the elementary particles of light (photons) are seen to be competing increasingly with the elementary particles of charge (electrons/holes) in the task of transmitting and processing the insatiable amounts of infonnation needed by society. The massive enhancements in electronic signal processing that have taken place since the discovery of the transistor, elegantly demonstrate how we have learned to make use of the strong interactions that exist between assemblages of electrons and holes, disposed in suitably designed geometries, and replicated on an increasingly fine scale. On the other hand, photons interact extremely weakly amongst themselves and all-photonic active circuit elements, where photons control photons, are presently very difficult to realise, particularly in small volumes. Fortunately rapid developments in the design and understanding of semiconductor injection lasers coupled with newly recognized quantum phenomena, that arise when device dimensions become comparable with electronic wavelengths, have clearly demonstrated how efficient and fast the interaction between electrons and photons can be. This latter situation has therefore provided a strong incentive to devise and study monolithic integrated circuits which involve both electrons and photons in their operation. As chapter I notes, it is barely fifteen years ago since the first demonstration of simple optoelectronic integrated circuits were realised using m-V compound semiconductors; these combined either a laser/driver or photodetector/preamplifier combination.

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Germanium written by Raminderpal Singh and published by John Wiley & Sons. This book was released on 2004-03-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM