Download or read book Growth and Characterization of Silicon Based Optoelectronic Devices written by Adam A. Filios and published by . This book was released on 1999 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Photonics, a blending of optics and electronics, has emerged as one of the world's most rapidly developing fields. Along with microelectronics, they constitute the core technologies of the information industry, and their advances are complementing each other in the tasks of the acquisition, transmission, storage, and processing of increasing amounts of information. Microelectronic device integration has progressed to the point that complete "systems-on-the-chip" have been realized. Photonic materials need to be integrated with standard electronic circuits for the implementation of the next generation optoelectronic "super-chip" where both electrons and photons participate in the transmission and processing of information. Silicon is the cornerstone material in conventional VLSI systems. However, having a relatively small and indirect fundamental energy band-gap, silicon is an inefficient light-emitter. On the other hand, direct integration of III-V photonic materials on a silicon chip is still very problematic. Squeezing light out of silicon itself appears to be an attractive alternative. Light emission from silicon is an important fundamental issue with enormous technological implications, In this work we explore several strategies towards developing silicon based optoelectronic devices. Porous silicon, a material produced by electrochemically etching silicon in aqueous hydrofluoric acid solutions, generated great interest in the early 1990s when it was shown to exhibit relatively bright, room temperature, visible photoluminescence. However, having a poor surface morphology, the material is fragile and chemically unstable leading to degradation of light emission and preventing integration with silicon processing technology. With the development of the epitaxially grown crystalline-SI/O superlattice, we attempt to overcome the morphological problems of porous silicon, retaining its light emission characteristics. Our multi-layer c-Si/O device consists of thin silicon layers sandwiched between monolayers of oxygen. The key for its fabrication is that epitaxial growth of silicon may be continued beyond the interruption with exposure to oxygen. Prepared by an Ultra High Vacuum (UHV), Molecular Beam Epitaxial (MBE) technique, the multi-layer device is extremely stable and robust, and can be readily integrated with conventional silicon VLSI processing. In addition, it exhibits bright, room temperature, visible photoluminescent and electroluminescent emission, at least as strong as that of porous silicon. With its efficient light emission, robustness and stability, the c-Si/O superlattice may hold the promise of a truly integrated silicon-based optoelectronic device.

Download or read book The Growth and Characterization of Silicon germanium Devices for Optoelectronic Applications written by Nathan Anthony Sustersic and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices fabricated for optoelectronic applications based on group IV semiconductors have become an important field of study, specifically in the terahertz (THz) region of the electromagnetic spectrum. Silicon Germanium (SiGe) optoelectronic devices are attractive because of possible compatibility with existing silicon based devices and fabrication techniques. Silicon based optoelectronic devices for use in the THz range also exhibit lower free-carrier and reststrahlen-band absorption than in typical III-V compound semiconductors. This thesis reports resonant state devices grown on varying substrates by Molecular Beam Epitaxy (MBE) and Chemical Vapor Deposition (CVD). The control of beam fluxes and growth conditions make MBE an attractive method for growing high quality SiGe epitaxial layers. Low Temperature Epitaxy (LTE) by CVD, using a process chamber held at ultra-high vacuum (UHV) conditions, is also an attractive method for growth of SiGe layers. LTE exhibits precise control over film thickness, composition, and concentration profiles while the whole concentration range (0% to 100%) of Ge in SiGe is accessible. The design and fabrication of these resonant state devices by MBE and CVD will be outlined. (Abstract shortened by UMI.).

Download or read book The Design Fabrication and Characterization of Silicon germanium Optoelectronic Devices Grown by Molecular Beam Epitaxy written by Nathan Anthony Sustersic and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, Ge and SiGe devices have been actively investigated for potential optoelectronic applications such as germanium solar cells for long wavelength absorption, quantum-dot intermediate band solar cells (IBSCs), quantum-dot infrared photodetectors (QDIPs) and germanium light-emitting diodes (LEDs). Current research into SiGe based optoelectronic devices is heavily based on nanostructures which employ quantum confinement and is at a stage where basic properties are being studied in order to optimize growth conditions necessary for incorporation into future devices. Ge and SiGe based devices are especially attractive due to ease of monolithic integration with current Si-based CMOS processing technology, longer carrier lifetime, and reduced phonon scattering. Defect formation and transformation was studied in SiGe layers grown on Si and Ge (100) substrates. The epitaxial layers were grown with molecular beam epitaxy (MBE) and characterized by X-ray measurements in order to study the accommodation of elastic strain energy in the layers. The accommodation of elastic strain energy specifies the amount of point defects created on the growth surface which may transform into extended crystalline defects in the volume of the layers. An understanding of crystalline defects in high lattice mismatched epitaxial structures is critical in order to optimize growth procedures so that epitaxial structures can be optimized for specific devices such as Ge based solar cells. Considering the optimization of epitaxial layers based on the structural transformation of point defects, Ge solar cells were fabricated and investigated using current-voltage measurements and quantum efficiency data. These Ge solar cells, optimized for long wavelength absorption, were fabricated to be employed in a bonded Ge/Si solar cell device. The doping of self-assembled Ge quantum dot structures grown on Si (100) was investigated using atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. This is of special interest for Ge quantum dots employed in active device structures where the effect of Ge dot and Si buffer layer doping on structural and luminescence properties must be well understood. Large Ge islands known as "superdomes" were fabricated by MBE and characterized by scanning electron microscopy (SEM), AFM, and Raman spectroscopy. These Ge nanostructures have the potential to become a direct material through band-structure modification by introducing moderate tensile strain into the Ge layer and band-filling. The results of this research on the growth, fabrication, and characterization of SiGe materials, structures, and devices may be useful for applications in the fields of energy, communication, computation, and remote sensing.

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Download or read book Porous Silicon Based Optoelectronics written by Siddhartha P. Dutta Gupta and published by . This book was released on 1998 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Low dimensional Structures for Optoelectronic Device Applications written by Latha Nataraj and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-dimensional structures can be defined as structures and components with novel and improved physical, chemical, and biological properties that result in new phenomena and processes due to their nanoscale size. This work, discusses the fabrication and characterization of low-dimensional structures such as Germanium-rich islands on Silicon, Germanium nanocrystals, Silicon nanomembranes, and quantum dot and quantum well structures made from III-V compounds, that have applications in on-chip and inter-chip optical interconnects, novel photovoltaic devices, and other optoelectronic devices. Silicon-Germanium quantum dots have been receiving considerable attention lately as a means to achieve high-performance hybrid photonics circuitry within CMOS platforms. Strain in Silicon-Germanium heterostructures has shown increased carrier mobility that leads to better performance. Moderate tensile strains in combination with heavy n-type doping have proven to favor direct band-to-band radiative recombination in Germanium, at optical telecommunication wavelengths. Self-assembled doped Germanium islands on Silicon have shown improved light-emission properties at telecommunication wavelengths with higher activation energies and improved ratio of radiative to non-radiative recombination. It is well known that the Stranski-Krastinov growth mode of these islands by molecular-beam-epitaxy is based on the strain due to the 4.2% lattice mismatch between the Germanium and Silicon atoms. Therefore it is extremely important to understand the strain in these structures and their influence on the optical properties of the islands, using various characterization techniques such as Raman spectroscopy, absorption measurements, photoluminescence spectroscopy, temperature-dependent, excitation-intensity-dependent, and time-resolved photoluminescence and spectroscopy. Band-engineered Germanium nanocrystals are considered to be highly promising for Silicon photonics integration due the near-direct band structure of the material. Germanium is fully-compatible with CMOS and the nanocrystals provide stronger confinement than Silicon nanocrystals due to the higher dielectric constant and larger Bohr-radius. In addition, large Germanium nanocrystals provide efficient emission, at room temperature, in the spectral range suitable for optical telecommunications. Fabrication of free-standing Germanium nanocrystals has been successful using a simple and inexpensive process. Their excellent light-emission properties, simple fabrication, and compatibility with standard microelectronic processes make them highly attractive for Silicon photonics integration and it is essential to understand their structural and optical properties. Raman spectroscopy, high-resolution-transmission-electron-microscopy, excitation-intensity-dependent photoluminescence spectroscopy, and time-resolved photoluminescence spectroscopy are used to gain insight into the structural properties, strain, photo-emission and recombination mechanisms in these structures. Thin, flexible semiconductor nanoscale membranes are superior platforms for high-performance flexible optoelectronic devices and high-efficiency flexible solar cell designs. Existing processes are extremely complicated and expensive. We develop a simple and inexpensive process for the fabrication of Silicon thin films for application in flexible solar cells. The structural properties are studied with techniques such as surface-enhanced Raman spectroscopy. Further characterization of optical properties and strain are being contemplated using x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy techniques. In addition, this work will discuss the optical characterization of various III-V materials systems such as Gallium-Arsenide/Gallium-Arsenide-Antimonide and Indium-Gallium-Arsenide/Gallium-Arsenide to study effects of surface passivation using Antimony and delta doping in these structures. These structures are of great interest for lasers and photodetectors in the long wavelength range and novel photovoltaic devices such as intermediate band solar cells. Room temperature photoluminescence spectroscopy and variations such as excitation-intensity dependent and temperature-dependent spectroscopy techniques have been used to determine emission properties and sub-band level occupancies and other structural characteristics such as defect densities and crystal quality.

Download or read book Coatings to Improve Optoelectronic Devices written by Selected Articles Published by MDPI and published by MDPI. This book was released on 2020-04-09 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: This selection is focused on coatings and films with applications in optoelectronics, such as photovoltaics, photocatalysis, and light-based sensors and phenomena. The studies investigate the optimal composition, crystalline structure, and morphology to deliver the different functionalities sought. Obtaining transparent p-type electrodes is challenging but extremely relevant in optoelectronics. Electric conduction mechanisms and the correlations with structure and doping are discussed. The important issue of the degradation pathways in perovskite-based solar cells and the possibilities offered by different types of coatings to encapsulate the devices as well as the beneficial effect of silica coating as an antireflection and antisoiling layer on well-established solar cells are discussed. New designs of nanoplasmonic films for chemical and biological molecule sensing are reviewed, such as the combination of metallic nanoparticles and nanostructured semiconductors and dispersing metallic or bi-metallic nanoparticles in CuO films. The impacts of structure, defects, and morphology on the photoactivated properties of WO3 films and on the shape memory behavior in Cu–Al–Ni thin films are discussed. Aggregated TiO2 nanoparticles on TiO2 layers are shown to enhance optical transmittance and confer a superhydrophilic characteristic. Finally, aspects of the fundamental characterization of thin films, Drude damping in thin films, and laser-induced deflection technique are discussed.

Download or read book Handbook of Compound Semiconductors written by Paul H. Holloway and published by Cambridge University Press. This book was released on 2008-10-19 with total page 937 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

Download or read book Characterization and Modeling of Nanostructured Silicon Thin film Optoelectronic Devices written by Vladislav Jovanov and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Rare Earth Implanted MOS Devices for Silicon Photonics written by Lars Rebohle and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications.

Download or read book Materials for Optoelectronic Devices OEICs and Photonics written by H. Schlötterer and published by Elsevier. This book was released on 1991-10-08 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.

Download or read book Development and Characterization of Novel Optoelectronic Devices Based on Composite Nanomaterials written by Dali Shao and published by . This book was released on 2013 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Heteroepitaxy Growth Characterization And Device Applications written by B Gil and published by World Scientific. This book was released on 1995-12-15 with total page 714 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the mathematics of differential geometry in a way more intelligible to physicists and other scientists interested in this field. This book is basically divided into 3 levels; level 0, the nearest to intuition and geometrical experience, is a short summary of the theory of curves and surfaces; level 1 repeats, comments and develops upon the traditional methods of tensor algebra analysis and level 2 is an introduction to the language of modern differential geometry. A final chapter (chapter IV) is devoted to fibre bundles and their applications to physics. Exercises are provided to amplify the text material.

Download or read book GaN based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1998 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reliability of Semiconductor Lasers and Optoelectronic Devices written by Robert Herrick and published by Woodhead Publishing. This book was released on 2021-03-06 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies. This book is suitable for new entrants to the field of optoelectronics working in R&D. • Includes case studies and numerous examples showing best practices and common mistakes affecting optoelectronics reliability written by experts working in the industry • Features the first wide-ranging and comprehensive overview of fiber optics reliability engineering, covering all elements of the practice from building a reliability laboratory, qualifying new products, to improving reliability on mature products. • Provides a look at the reliability issues and failure mechanisms for silicon photonics, VCSELs, InGaN LEDs and lasers, AIGaN LEDs, and more.

Download or read book Porous Silicon Fabrication Based Optoelectronic Device written by Mehdi Qasim Zayer and published by LAP Lambert Academic Publishing. This book was released on 2013 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this work to study the porous silicon and fabricate optical sensor based on optimum parameters of PS, chapter one explan the history of PS, chapter two displayed the physical properties of PS and study the Electrochemical etching of porous silicon, Electrical and Photoelectrical Properties, Rapid Thermal Annealing techniques process, and Applications of Porous Silicon. chapter three explain the sample preparation and experiment methodology. chapter four was the characterization of PS using FESEM, AFM, XRD, and Photoluminescence studies before and after annealing, finally PS device fabrication and characterization based on time response and I-V characteristic.