Download or read book Growth and Characterization of Nitride Semiconductors on Chemical Vapor Deposited Diamond written by Raju Ahmed and published by . This book was released on 2018 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III nitride semiconductor-based devices have emerged as the best candidates for handling higher power and frequency in recent years. Performance of various devices such AlGaN/ GaN high electron mobility transistors, GaN lasers and GaN LEDs are often hindered by self-heating of these materials and poor heat removal capabilities of the substrate materials. Chemical vapor deposited (CVD) diamond has demonstrated the best heat removal capability, when employed as the substrate material for GaN based high power devices, due to its high thermal conductivity. Diamond is either grown directly on the backside or bonded with GaN using an adhesion layer to extract excessive heat from the near junction region of these devices. In both cases, thermal resistance associated with the interface of diamond and GaN limits the effectiveness of the diamond layer. In this work, single crystal GaN has been grown using metal organic chemical vapor deposition (MOCVD) directly on chemical vapor deposited diamond without any adhesion layer in a novel way which will mitigate thermal resistance between the near junction region of GaN devices and diamond substrate. The growth of GaN-on-diamond was achieved through a series of experiments and characterizations in various steps of the process.
Download or read book Growth and Characterization of Diamond Thin Films written by Sattar Mirzakuchaki and published by . This book was released on 1996 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical vapor deposited (CVD) diamond thin films grown homoepitaxially as well as on non-diamond substrates have been the subject of intense investigation since the beginning of the last decade. Diamond's remarkable properties such as physical hardness, chemical inertness, high thermal conductivity, high breakdown voltage, and high carrier mobility are the main factors for the attention it has received from many researchers around the world. Although these properties are somewhat degraded in polycrystalline diamond films, they are still superior to many other materials. One of the most potentially useful applications of diamond thin films is in the semiconductor industry. Although a few prototype devices such as field effect transistors and Schottky diodes have been fabricated on diamond, some major obstacles remain to be overcome before full scale commercial applications of diamond as a semiconductor is possible. The high cost of large area monocrystalline diamond substrates has forced researchers to look for alternative substrates for the heteroepitaxial growth of diamond. So far only marginal results have been reported on the growth of highly oriented diamond films and on the heteroepitaxial growth involving substrates that are as costly as diamond. Silicon, as the dominant material in semiconductor industry, has been the subject of much research as a substrate for the growth of polycrystalline diamond. Another problem in development of diamond as a semiconductor is the effective doping of diamond, particularly for n-type conductivity. Although many researchers have studied boron-doped (p-type) diamond thin films in the past several years, there have been few reports on the effects of doping diamond films with phosphorous (n-type). Once these two issues have been solved, other fabrication steps such as oxidation, etching, masking, etc. may be attempted. The present work is a study directed toward solving some of these problems by looking at in-situ doping of n-type hot filament CVD (HFCVD) grown diamond films on silicon substrates. The study includes electrical characterization, stable metallic contacts, effect of silicon substrate surface pretreatment, and selective area deposition. A number of different techniques for inducing diamond nucleation on Si substrates are studied and the resulting diamond films characterized by common techniques such as Raman spectroscopy, X-ray diffraction, optical and scanning electron microscopy, and profilometery. The effect of doping the diamond films with different concentrations of phosphorous as well as calculation of the activation energy by temperature measurement was also carried out in this work. A new technique is presented for the selective deposition of diamond films onto silicon substrates.
Download or read book Growth and Characterization of III V Semiconductors by Metalorganic Chemical Vapor Deposition Using Low Toxicity Tertiarybutylarsine and Tertiarybutylphosphine Precursors written by Michael Patrick Mack and published by . This book was released on 1993 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposited Boron Doped Polycrystalline Diamond Thin Film Growth on Silicon and Sapphire Growth Doping Metallization and Characterization written by Hassan Golestanian and published by . This book was released on 1997 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diamond's unique properties are potentially superior among the existing substrate materials for electronic applications. Among these properties, diamond's physical hardness, molar density, thermal conductivity, and sound velocity are the highest while its thermal expansion coefficient, compressibility, and bulk modules are the lowest. Because of this unique combination of properties, diamond has diverse applications in electronics, optics, and material coatings. Scientists around the world have been studying possible applications of diamond and its synthesis by chemical vapor deposition (CVD) in the semiconductor industry for almost the latter half of this century. The use of bulk crystals severely limits semiconductor applications of diamond due to difficulty in doping, device integration, high cost, and small area of bulk diamond. Therefore, a great deal of effort has been undertaken by researchers around the world on diamond synthesis by chemical vapor deposition (CVD). With some of the same limitations, homoepitaxial growth of diamond is not considered to be a feasible solution. As a result, heteroepitaxial growth of diamond is being considered to be an attractive possibility. Heteroepitaxial diamond growth has been the main subject of research since the first successful growth of diamond thin films on foreign substrates was reported. Polycrystalline and highly oriented diamond thin films grown on various substrates, especially silicon, have been reported over the years. There also have been reports of device fabrication on diamond such as diamond based point contact transistors, Schottky diodes, and field effect transistors at a laboratory level. The technology has been very challenging and there remain many obstacles to overcome before diamond based devices are to become part of the semiconductor industry. For example, epitaxial growth of CVD diamond, selective doping, n-type doping, and metallization of the grown films are not totally understood due to the polycrystalline nature of CVD diamond films. The objective of this work is the study of hot-filament chemical vapor deposited boron doped polycrystalline diamond thin films grown on both silicon and sapphire. A new horizontal gas flow configuration rather than the typical vertical gas flow configuration is utilized to provide larger area and better quality films grown on these substrates. The study includes characterization of grown films using scanning electron microscopy, Raman spectroscopy, X-ray diffraction analysis, and electrical characterization. Two types of contacts to the films grown on silicon substrates are fabricated enabling various electrical measurements. However, on sapphire substrates, low volume resistivity diamond films are grown despite severe adhesion problems. The effects of various substrate pre-treatments, growth conditions, and doping concentrations are presented.
Download or read book Growth and Characterization of Single crystal Chemical Vapor Deposition Diamond for High Resolution Particle Detectors written by María Eugenia Morgada and published by . This book was released on 2006 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Group III Nitride Materials on 0001 Sapphire by Metalorganic Chemical Vapor Deposition written by Junko T. Kobayashi and published by . This book was released on 1998 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Diamond and Diamond like Films by Filament assisted Chemical Vapor Deposition written by Yijian Jin and published by . This book was released on 1993 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal organic Chemical Vapor Deposition Growth and Characterization of Gallium Nitride Nanostructures written by Jie Su and published by . This book was released on 2005 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Power Electronics Device Applications of Diamond Semiconductors written by Satoshi Koizumi and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics
Download or read book Growth and Characterization of Semiconductor Nanostructures for Nanoelectronics written by Jiebin Zhong and published by . This book was released on 2011 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our findings provide an in-depth understanding of semiconductor NW growth via chemical vapor deposition, and the first basis for further investigations on how to achieve controlled growth of individual and arrayed NWs, and novel device applications for switching and computation based on future development of nanoscale specific integrated circuits--NASICs.
Download or read book Growth and Characterization of Large High Quality Single Crystal Diamond Substrates Via Microwave Plasma Assisted Chemical Vapor Deposition written by Shreya Nad and published by . This book was released on 2016 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Plasma Enhanced CVD Processes Volume 165 written by Gerald Lucovsky and published by Mrs Proceedings. This book was released on 1990-09-05 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Deep Level Transient Spectroscopy of Heteroepitaxial Polycrystalline Diamond and Aluminum Nitride written by Hossein Karbasi and published by . This book was released on 1998 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical and optical properties of semiconductors strongly depend on the impurity, which is intentionally or unintentionally introduced to them. Intentional impurities or dopants usually have low activation energy due to their shallow nature. On the other hand unintentional impurities or defects are deeper in the band gap and therefore have higher activation energy. There are different optoelectrical techniques to characterize the impurity levels in semiconductors. Deep level transient spectroscopy is one of the techniques, which enable us to find information about defects that are mostly deep in the band gap and harder to be detected by other techniques. Deep level transient spectroscopy (DLTS) has been used to study the defect levels in two wide band gap semiconductors (polycrystalline hetroepitaxial diamond and aluminum nitride). The properties of diamond, hot filament chemical vapor deposition (HFCVD) of diamond, and diamond characterization are discussed in chapters one through three. Chapter four explains some properties of aluminum nitride as well as the electrical characterization of aluminum nitride. DLTS theory and technique are discussed in chapter five. Experimental results of DLTS on diamond and AlN are given at the end of chapter five from which the deep level energy, defect concentration, and capture cross section of defects can be obtained.
Download or read book Growth and Characterization of III V Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition written by Ryan S. Dowdy and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Planar 110 GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on suspended thin films give insight into the mobility of the seed particle and change in growth direction. Nanowires that were grown on the off-cut sample exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films and show preferential growth at certain temperatures. Envisioned nanowire applications include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.
Download or read book Chemical Vapor Deposition Based Semiconductor Nanowire Growth System Development and the Characterization of Resulting Epitaxial Nanowires written by Kamran Matthew Varahramyan and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Multi length Scale Analysis of Chemical Vapor Deposition CVD of Diamond and Titanium Nitride Films written by Shugang Lai and published by . This book was released on 2000 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:
