Download or read book GaN heterostructure field effect transistors written by and published by . This book was released on 1910 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and SiC substrates are presented. High total power have been demonstrated by these devices at microwave frequencies. The prospects of utilizing the devices for high power integrated amplifiers are excellent although the issue of thermal management will need to be addressed especially for devices and circuits on sapphire.

Download or read book Process Development and Characterization of A1GaN GaN Heterostructure Field effect Transistors written by Andrew Taiann Ping and published by . This book was released on 1999 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ambient Temperature Effects on the Performance of A1GaN GaN Heterostructure Field effect Transistors written by Yang-An Tan and published by . This book was released on 2007 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Current Collapse and Device Degradation in AlGaN GaN Heterostructure Field Effect Transistors written by Daniel Balaz and published by . This book was released on 2010 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of Temperature Field in a GaN Heterostructure Field Effect Transistor written by Mirza Arif Baig and published by . This book was released on 2002 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book An Experimental Study of AlGaN GaN Heterostructure Field effect Transistors HFETs written by Wei San Tan and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaN based Heterostructure Field Effect Transistors and MMICs for High Frequency Applications written by Sanghyun Seo and published by . This book was released on 2009 with total page 165 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development of N channel and P channel AlGaN GaN Heterostructure Field Effect Transistors written by and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book AlGaN GaN heterostructure field effect transistors written by and published by . This book was released on 1910 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A brief overview of materials. Processing, technologies, and performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) are presented. Sate-of-the-art results on the dc, microwave, power, and noise characteristics of these devices on sapphire and SiC substrates are discussed. It is evident that AlGaN/GaN HFETs will be used for high power applications at microwave frequencies in the future. It is also possible that these devices will find applications for low noise amplifiers.

Download or read book Self aligned gate AlGaN GaN Heterostructure Field effect Transistor with Titanium Nitride Gate written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technology and Characterization of GaN based Heterostructure Field Effect Transistors HFETs written by Michael Fieger and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Process Development and Characterization of AlGaN GaN Heterostructure Field Effect Transistors written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Implementation of Heterostructure Field Effect Transistor on AlGaN GaN written by Adi Horn and published by . This book was released on 2004 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaN based Heterostructure Field Effect Transistors with Ternary and Quaternary InAl Ga N Barrier Layers written by Nico Ketteniß and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thermal Analysis of AlGaN GaN Heterostructure Field Effect Transistors Using Nematic Liquid Crystals and In house Codes written by Dimitri Kakovitch and published by . This book was released on 2003 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of III N Heterostructure Field Effect Transistors written by Bravishma Narayan and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis describes the design, fabrication and characterization of AlGaN/GaN Heterostructure Field E ect Transistors (HFETs) grown by a Metal Organic Chemical Vapor Deposition (MOCVD) on sapphire substrates. The objective of this research is to develop AlGaN/GaN power devices with high breakdown voltage (greater than 1 kV) and low turn-on resistance. Various characteristics such as current drive (Idss), transconductance (gm) and threshold voltage (Vth) have also been measured and the results have been discussed. Two major challenges with the development of high breakdown voltage AlGaN/GaN HFETs in the past have been high material defect density and non-optimized fabrication technologies which gives rise to bu er leakage and surface leakage, respectively. In this thesis, mesa isolation, ohmic and gate metal contacts, and passivation techniques, have been discussed to improve the performance of these power transistors in terms of low contact resistance and low gate leakage. The relationship between breakdown voltage and Rds(ON)A with respect to the gate-drain length (Lgd) is also discussed. First, unit cell devices were designed (two-fingered cells with Wg = 100, 300, 400 m) and characterized, and then they were extended to form large area devices (upto Wg = 40 mm). The design goals were classied into three parts: : - High Breakdown Voltage: This was achieved by designing devices with variations in Lgd,

Download or read book The Epitaxial Growth of GaN and A1GaN GaN Heterostructure Field Effect Transistors HFET on Lithium Gallate LiGaO2 Substrates written by Sangbeom Kang and published by . This book was released on 2002 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: