Download or read book GaAsSb InGaAs Type II Quantum Wells for Long wavelength Lasers on GaAs Substrates written by and published by . This book was released on 2000 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecule beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer, strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 [mu]m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb vs GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in non-ideal interfaces under certain growth conditions. At low injection currents, double heterostructure lasers with GaAsSb/InGaAs bilayer quantum well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities as low as 120 A/cm2 at 1.17 [mu]m, and 2.1 kA/cm2 at 1.21 [mu]m.
Download or read book Antimonide Based Long Wavelength Lasers on GaAs Substrates written by and published by . This book was released on 2000 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3 [mu]m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34 [mu]m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275 [mu]m with a room-temperature threshold current density as low as 535 A/cm2. Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17 [mu]m have been obtained with room-temperature threshold current densities of 120 A/cm2, and devices operating at 1.29 [mu]m have displayed thresholds as low as 375 A/cm2. Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.
Download or read book Long Wavelength GaAsSb Quantum Well Lasers on GaAs Substrates Grown by MOVPE written by 王義欣 and published by . This book was released on 2007 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Type II W Quantum Wells for Mid infrared Emission written by Juno Yu-Ting Huang and published by . This book was released on 2008 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Novel Quantum wells GaAs based Lasers for All Transmission Windows in Optical Communication written by Nelson Tansu and published by . This book was released on 2003 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Speed Compound Semiconductor Devices for Wireless Applications and State of the Art Program on Compound Semiconductors XXXIII written by A. G. Baca and published by The Electrochemical Society. This book was released on 2000 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR
Download or read book Handbook of Optoelectronic Device Modeling and Simulation written by Joachim Piprek and published by CRC Press. This book was released on 2017-10-10 with total page 835 pages. Available in PDF, EPUB and Kindle. Book excerpt: • Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.
Download or read book Quantum Dot Lasers written by Victor Mikhailovich Ustinov and published by . This book was released on 2003 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.
Download or read book Physics and Simulation of Optoelectronic Devices written by and published by . This book was released on 2000 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Journal of the Korean Physical Society written by and published by . This book was released on 2007 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Meeting Abstracts written by Electrochemical Society. Meeting and published by . This book was released on 1999 with total page 1220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Download or read book State of the Art Program on Compound Semiconductors XXXVII SOTAPOCS XXXVII and Narrow Bandgap Optoelectronic Materials and Devices written by P. C. Chang and published by The Electrochemical Society. This book was released on 2002 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Fiber Telecommunications VIA written by Julie Sheridan Eng and published by Elsevier Inc. Chapters. This book was released on 2013-05-03 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vertical Cavity Surface Emitting Laser (VCSEL)-based data links are attractive due to their low-power dissipation and low-cost manufacturability. This chapter reviews the foundations for this technology, as well as the device and module design challenges of extending the data rate beyond the current level. We begin with a review of data communications from the business perspective, and continue with a brief discussion of the current and future standards. This is followed by a survey of recent advances in VCSELs, including data links operating at 28Gb/s. We review the recent efforts on ultra-fast data links and discuss the advantages of the different approaches. We also examine key design aspects of optical transceiver modules and we focus our discussion on novel applications in high-performance computing using both multi-mode and single-mode fiber optics. We highlight the importance of the device/component-level and system-level modeling and show some modeling examples with comparison to measured data. We conclude with a comparison of the VCSEL-based data links with other competing technologies, including silicon photonics and short-cavity edge emitting lasers.
Download or read book JJAP written by and published by . This book was released on 2007 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book InGaAs InA1As Quantum Wells for 1 3 mu m Electro absorption Modulators on GaAs Substrates written by Lei Shen and published by . This book was released on 1997 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
