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Book Formation of Silicide Contacts Using Codeposited Refractory Metals Alloy Films

Download or read book Formation of Silicide Contacts Using Codeposited Refractory Metals Alloy Films written by M. Eizenberg and published by . This book was released on 1984 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contact reactions of a Si substrate and thin films of co-deposited two refractory metals have been studied. Three systems have been chosen Ta-V, Ta-W and Ti-V. As reference also two bilayer structures for each system have been studied (e.g. Ta/W/Si and W/Ta/Si for the Ta-W system). In each system the dependence of the interaction with Si on annealing temperature and on alloy composition is investigated. The interdiffusion and silicide formation have been analyzed by Auger electron spectroscopy and X-Ray diffraction. (Author).

Book Materials and Process Characterization

Download or read book Materials and Process Characterization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.

Book Research in Progress

Download or read book Research in Progress written by and published by . This book was released on 1988 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1984 with total page 1278 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Silicides for VLSI Applications

Download or read book Silicides for VLSI Applications written by Shyam P. Murarka and published by Academic Press. This book was released on 2012-12-02 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the subject matter of this book has previously been available only in the form of research papers and review articles. I have not attempted to refer to all the published papers. The reader may find it advantageous to refer to the references listed.

Book Research in Progress

Download or read book Research in Progress written by United States. Army Research Office and published by . This book was released on 1984 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vols. for 1977- consist of two parts: Chemistry, biological sciences, engineering sciences, metallurgy and materials science (issued in the spring); and Physics, electronics, mathematics, geosciences (issued in the fall).

Book VLSI Electronics  Materials and process characterization

Download or read book VLSI Electronics Materials and process characterization written by Norman G. Einspruch and published by . This book was released on 1981 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Preparation and Properties of Thin Films

Download or read book Preparation and Properties of Thin Films written by K. N. Tu and published by Elsevier. This book was released on 2013-10-22 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properties of thin films on substrates. The ion beam modification of thin film; the use of thin alloy films for metallization in microelectronic devices; and the fabrication and physical properties of ultrasmall structures are also encompassed. Materials scientists and materials engineers will find the book invaluable.

Book Formation of Metal Silicide and Metal Germanosilicide Contacts to Si sub 1 x subscript Ge  subscript  Alloys

Download or read book Formation of Metal Silicide and Metal Germanosilicide Contacts to Si sub 1 x subscript Ge subscript Alloys written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The goals of this research were to study the phase stability and formation of Ti-Si[subscript 1-x]Ge[subscript x] and Co-Si[subscript 1-x]Ge[subscript x] thin film reactions. The Ti-Si[subscript 1-x]Ge[subscript x] and Co-Si[subscript 1-x]Ge[subscript x] solid phase reactions result in the formation of precipitates within the grain boundaries of the films thus formed. The precipitates are either Ge or a Si-Ge compound, depending on the type of metal used in the reaction. The formation of Ti(Si[subscript 1-y]Ge[subscript y])2 thin films on Si[subscript 1-x]Ge[subscript x] has been examined. It has been found that the generation of Ge-rich Si-Ge precipitates which form in the Ti-Si[subscript 1-x]Ge[subscript x] solid phase reaction could be reduced or eliminated by the insertion of an amorphous Si layer before the metallization step. A Gibbs free energy model, which was parameterized in terms of Ge concentration by atomic percentage was used to determine stability between the Ti(Si[subscript 1-y]Ge[subscript y])2 layer and the Si[subscript 1-x] Ge[subscript x] substrate. The films in this study were characterized using x-ray diffraction (XRD) to investigate phase formation, stability, and the composition of the Ti(Si[subscript 1-y]Ge[subscript y])2 layer. Scanning electron microscopy (SEM) was used to determine the surface morphology and phase stability. It was found that amorphous Si layers of a certain thickness could prevent precipitate formation, depending on the composition of the underlying Si[subscript 1-x] Ge[subscript x] layer. The formation of CoSi2 on Si[subscript 1-x]Ge[subscript x] was also examined. The solid phase reaction of Co and Si[subscript 1-x]Ge[subscript x] results in the formation of a poly-crystalline CoSi2 layer, and the occurrence of a Ge precipitate. The TIME (Titanium Interlayer Mediated Epitaxy) process has been used in the formation of epitaxial CoSi2 on Si (100). A Ti layer of varying thicknesses, whi.

Book Government Reports Announcements   Index

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1984-10 with total page 1112 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metal     Semiconductor Contacts and Devices

Download or read book Metal Semiconductor Contacts and Devices written by Simon S. Cohen and published by Academic Press. This book was released on 2014-12-01 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.

Book VLSI Science and Technology 1984

Download or read book VLSI Science and Technology 1984 written by Kenneth E. Bean and published by . This book was released on 1984 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Handbook of Semiconductor Manufacturing Technology

Download or read book Handbook of Semiconductor Manufacturing Technology written by Yoshio Nishi and published by CRC Press. This book was released on 2000-08-09 with total page 1186 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Semiconductor Manufacturing Technology describes the individual processes and manufacturing control, support, and infrastructure technologies of silicon-based integrated-circuit manufacturing, many of which are also applicable for building devices on other semiconductor substrates. Discussing ion implantation, rapid thermal processing, photomask fabrication, chip testing, and plasma etching, the editors explore current and anticipated equipment, devices, materials, and practices of silicon-based manufacturing. The book includes a foreword by Jack S. Kilby, cowinner of the Nobel Prize in Physics 2000 "for his part in the invention of the integrated circuit."

Book VLSI Science and Technology

Download or read book VLSI Science and Technology written by and published by . This book was released on 1984 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metals Abstracts Index

Download or read book Metals Abstracts Index written by and published by . This book was released on 1984 with total page 1034 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Silicide Technology for Integrated Circuits

Download or read book Silicide Technology for Integrated Circuits written by Institution of Electrical Engineers and published by IET. This book was released on 2004-12-21 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to provide guidance on the development and application of metal silicide technology as it emerges from the scientific to the prototype and manufacturing stages. Other key topics covered are fundamentals, present and future silicide technology for Si-based devices, and characterisation methods. Suitable for engineers and students in microelectronics.

Book Concise Encyclopedia of Semiconducting Materials   Related Technologies

Download or read book Concise Encyclopedia of Semiconducting Materials Related Technologies written by S. Mahajan and published by Elsevier. This book was released on 2013-10-22 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.