Download or read book Field effect Transistor Noise at Low Temperatures written by Richard Alan Spaulding and published by . This book was released on 1969 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature noise measurements on junction field-effect transistors tend to substantiate a theory of low frequency field-effect transistor noise based on the presence of generation centers in the gate-channel depletion region. Measurements of device noise voltage versus temperature reveal pronounced maxima and minima over the temperature range of 300° K to 77° K. Analysis of the maxima can yield information on time constants, capture cross-sections and energy levels of generation centers in the depletion region. The pertinent theories of junction FET noise are reviewed with regard to temperature-dependent phenomena. Contributions due to thermal noise, shot noise, induced gate noise, surface leakage and generation centers are considered. Techniques for measuring the temperature dependence of FET noise are discussed, and a practical approach is described. Measurements are made in a typical circuit configuration in order that the results may be directly related to device applications. Measured data on the temperature dependence of noise in the 300° K to 77°K range is presented for 14 n- and p-channel FET's. Salient features of the data are analyzed and correlated with theoretical predictions.
Download or read book Investigations of Field Effect Transistors at Cryogenic Temperatures written by George B. Craig and published by . This book was released on 1970 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Various JFET and MOSFET devices have been studied at LN and L He temperatures. A strong increase in transconductance and decrease in equivalent input noise is registered when the ambient temperature changed from 300K to 77K. A very small change in electrical parameters of the device was noticed when the environment temperature was further lowered to 4.2K. Transient and steady state heating of the devices at 4.7K is investigated and it is found that the active part of the device heats up typically to a steady state value of 40 - 60K. In most of the devices this agrees with the thermal noise observed. A transient and steady state device heating model is constructed and the results are found to be in good agreement with the measured temperatures and measured heating transients. The equivalent input noise studies for a germanium FET device have shown a strong 1/F-noise for frequencies up to approximately 100 kHz and thermal noise for higher frequencies. At cryogenic temperatures JFET devices show a slight decrease in noise spectrum. The noise spectrum of the MOSFET devices in most cases is by an order of magnitude larger than that of the JFET device. Some of the MOSFET devices show a substantial increase in noise at lower frequencies when the environment temperature is lowered to a cryogenic level. (Author).
Download or read book Low Temperature Electronics written by Edmundo A. Gutierrez-D. and published by Academic Press. This book was released on 2001 with total page 985 pages. Available in PDF, EPUB and Kindle. Book excerpt: Summarizes the advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. This book provides an exploration of the theory, research, and technologies related to cryoelectronics.
Download or read book Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1995 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Performance of Field Effect Transistors written by Wei Zhu and published by . This book was released on 1994 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature static characteristics of silicon junction field-effect transistors (JFETs) have been investigated and analysed. The following changes were observed after cooling down the transistors: pinch-off voltage and transconductance increases; and drain current is changed as a function of the drain-source voltage. It was found that there was an increase in the amplifying properties and a reduction in noise voltage of cooled transistors. In addition, the temperature and voltage dependence of leakage current have been studied. Temperatures below 77K are of interest in evaluating effects of impurity freezeout and temperature above 77K are important since actual device temperature will be about the ambient. Operation of FET circuits at liquid nitrogen temperature has been suggested as a means of improving circuit and system performance.
Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-01-25 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Download or read book Advances in Cryogenic Engineering written by K.D. Timmerhaus and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1985 joint Cryogenic Engineering/International Cryogenic Materi als Conference was held on the campus of the Massachusetts Institute of Technology, Cambridge, Massachusetts. About 350 papers were presented at the joint conference on a wide variety of topics in cryogenic science and engineering. This volume of Advances in cryogenic Eogineerlng, the thirty-first in the series which began in 1954, contains most of the papers which were presented at the 1985 Cryogenic Engineering Conference. Each paper was rigorously peer reviewed to maintain the international reputation of Advances as the premier archival publication in the field of cryoscience, engineering, and technology. All the papers published in Volume 31 contain an abstract. A copy of the book will be sent to all maj or abstracting services, which should improve retrieval of the information contained in the published papers. I would like to thank the authors and those who served as reviewers. I especially appreciate the assistance of my colleague M. E. Stone who edited some of the papers for this volume. Terry Gutierrez was invaluable in preparing the manuscripts for publication, and I thank her. xvii DEDICATION Dr. Samuel C. Collins, Professor Emeritus of the Massachusetts Institute of Technology, internationally known as the father of practical helium liquefiers and founder of the MIT Cryogenic Engineering Laboratory, died on June 19, 1984, in George Washington University Hospital, Washington, DC.
Download or read book NIST Technical Note written by and published by . This book was released on 1991 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low temperature Electronics written by Randall K. Kirschman and published by . This book was released on 1986 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Detectors for Neutrinos and Dark Matter III written by L. Brogiato and published by Atlantica Séguier Frontières. This book was released on 1990 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise of Field effect Transistors and the Effect of Varying Temperature written by Lawrence I. Harzstark and published by . This book was released on 1971 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Issues in General Physics Research 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 8864 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in General Physics Research / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about General Physics Research. The editors have built Issues in General Physics Research: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about General Physics Research in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in General Physics Research: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Download or read book Low Temperature Detectors for Neutrinos and Dark Matter II written by Luis Gonzalez-Mestres and published by Atlantica Séguier Frontières. This book was released on 1988 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Art of Cryogenics written by Guglielmo Ventura and published by Elsevier. This book was released on 2010-07-07 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cryogenics is the study of low temperature interactions - temperatures well below those existing in the natural universe. The book covers a large spectrum of experimental cases, including basic vacuum techniques, indispensable in cryogenics. Guidance in solving experimental problems and numerous numerical examples are given, as are examples of the applications of cryogenics in such areas as underground detectors and space applications. Updated tables of low-temperature data on materials are also presented, and the book is supplemented with a rich bibliography. Researchers (graduate and above) in the fields of physics, engineering and chemistry with an interest in the technology and applications of low-temperature measurements, will find this book invaluable. - Experiments described in technical detail - Description of newest cryogenic apparatus - Applications in multidisciplinary areas - Data on cryogenic properties of new materials - Current reference review
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
