Download or read book Fabrication Process Assessment and Negative Bias Illumination Stress Study of IGZO and ZTO TFTs written by Ken Hoshino and published by . This book was released on 2012 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs, significantly improving the NBIS stability. NBIS instabilities in unpassivated TFTs are attributed to an NBIS-induced desorption of chemisorbed oxygen from the channel layer top surface, exposing surface oxygen vacancies. A ZTSO layer protects the channel layer top surface from adsorbed gas interactions and also appears to reduce the density of oxygen vacancies. The best device architectures investigated with respect to TFT electrical performance are found to be staggered with aluminum electrodes for unpassivated TFTs and coplanar with ITO electrodes for ZTSO-passivated TFTs. Annealing in wet-O2 is not found to be effective for improving the performance of IGZO or ZTO TFTs or for reducing the post-deposition annealing temperature.
Download or read book Instability and Temperature dependence Assessment of IGZO TFTs written by Ken Hoshino and published by . This book was released on 2009 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO-based TFTs processed at temperatures between 200 °C and 300 °C. TFTs tested exhibit an almost rigid shift in log10(I[subscript D]) - V[subscript GS] transfer curves in which the turn-on voltage, V[subscript ON], moves to a more positive gate voltage with increasing stress time during constant-voltage bias-stress testing of IGZO TFTs. TFT stability is improved as the post-deposition annealing temperature increases over the temperature range of 200 - 300 °C. The turn-on voltage shift induced by constant-voltage bias-stressing is at least partially reversible; V[subscript ON] tends to recover towards its initial value of V[subscript ON] if the TFT is left unbiased in the dark for a prolonged period of time and better recovery is observed for a longer recovery period. V[subscript ON] for a TFT can be set equal to zero after bias-stress testing if the TFT electrodes are grounded and the TFT is maintained in the dark for a prolonged period of time. Attempts to accelerate the recovery process by application of a negative gate bias at elevated temperature (i.e., 100 °C) were unsuccessful, resulting in severely degraded subthreshold swing. An almost rigid log10 (I[subscript D]) -V[subscript GS] transfer curve shift to a lower (more negative) V[subscript ON] with increasing temperature is observed in the range of -50 °C to +50 °C, except for a TFT with an initial V[subscript ON] equal to zero, in which case the log10(ID) - V[subscript GS] transfer curve is temperature-independent. A more detailed temperature-dependence assessment, however, indicates that the log10(I[subscript D]) - V[subscript GS] transfer curve shift is not exactly rigid since the mobility is found to increase slightly with increasing temperature. A noticeable anomaly is observed in certain log10(I[subscript D]) - VGS transfer curves, especially when obtained at elevated temperature (e.g., 30 and 50 °C), in which I[subscript D] decreases precipitously near zero volts in the positive gate voltage sweep. This anomaly is attributed to a gate-voltage-step-involved detrapping and subsequent retrapping of electrons in the accumulation channel and/or channel/gate insulator interface. In fact, all IGZO TFT stability and temperature-dependence trends are attributed to channel interface and/or channel bulk trapping/detrapping.
Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-17 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.
Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
Download or read book Physics and Technology of Crystalline Oxide Semiconductor CAAC IGZO written by Shunpei Yamazaki and published by John Wiley & Sons. This book was released on 2016-12-27 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: • Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. • Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. • Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.
Download or read book Oxide Semiconductors Volume 1633 written by Steve Durbin and published by Materials Research Society. This book was released on 2014-07-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Symposium R, "Oxide Semiconductors" was held December 1-6 at the 2013 MRS Fall Meeting in Boston, Massachusetts. Oxide semiconductors are poised to take a more active role in modern electronics, particularly in the field of thin film transistors. While many advances have been made in terms of our understanding of fundamental optical and electronic characteristics, there remain many questions in terms of defects, doping, and optimal growth/synthesis conditions. This symposium proceedings volume represents recent advances in growth and characterization of a number of different oxide semiconductors, as well as device fabrication.
Download or read book Transparent Electronics written by Elvira Fortunato and published by . This book was released on with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technology and Applications of Amorphous Silicon written by Robert A. Street and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives the first systematic and complete survey of technology and application of amorphous silicon, a material with a huge potential in electronic applications. The book features contributions by world-wide leading researchers in this field.
Download or read book Chemically Deposited Nanocrystalline Metal Oxide Thin Films written by Fabian I. Ezema and published by Springer Nature. This book was released on 2021-06-26 with total page 926 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book guides beginners in the areas of thin film preparation, characterization, and device making, while providing insight into these areas for experts. As chemically deposited metal oxides are currently gaining attention in development of devices such as solar cells, supercapacitors, batteries, sensors, etc., the book illustrates how the chemical deposition route is emerging as a relatively inexpensive, simple, and convenient solution for large area deposition. The advancement in the nanostructured materials for the development of devices is fully discussed.
Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.
Download or read book Transparent Electronics written by John F. Wager and published by Springer Science & Business Media. This book was released on 2007-11-20 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first roadmap for transparent electronics. It defines and assesses what and where the field is, where it is going, and what needs to happen to get it there. Although the central focus of this monograph involves transparent electronics, many of the materials, devices, circuits, and process integration strategies discussed will be of great interest to researchers working in other emerging fields, including printed electronics, large-area electronics, low-cost electronics, and disposable electronics.
Download or read book Advances in Solid State Circuit Technologies written by Paul Chu and published by BoD – Books on Demand. This book was released on 2010-04-01 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields.
Download or read book Organic and Amorphous Metal Oxide Flexible Analogue Electronics written by Vincenzo Pecunia and published by Cambridge University Press. This book was released on 2018-05-17 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have witnessed significant research efforts in flexible organic and amorphous-metal-oxide analogue electronics, in view of its formidable potential for applications such as smart sensor systems. This Element provides a comprehensive overview of this growing research area. After discussing the properties of organic and amorphous-metal-oxide technologies relevant to analogue circuits, this Element focuses on their application to two key circuit blocks: amplifiers and analogue-to-digital converters. The Element thus provides a fresh look at the evolution and immediate opportunities of the field, and identifies the remaining challenges for these technologies to become the platform of choice for flexible analogue electronics.
Download or read book Ferroelectrics written by Mickaël Lallart and published by BoD – Books on Demand. This book was released on 2011-08-23 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.
Download or read book Advanced Display Technology written by In Byeong Kang and published by Springer Nature. This book was released on 2021-05-20 with total page 331 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive and up-to-date guide to the AMOLED technologies and applications which have become industry standard in a range of devices, from small mobile displays to large televisions. Unlike other books on the topic, which cover the fundamentals, materials, processing, and manufacturing of OLEDs, this one-stop book discusses the core components, such as TFT backplanes, OLED materials and devices, and driving schematics together in one volume with chapters written by experts from leading international companies in the field of OLED materials and OLED TVs. It also examines emerging areas, such as micro-LEDs, displays using quantum dots, and AR & VR displays. Presenting the latest research trends as well as the basic principles of each topic, this book is intended for undergraduate and postgraduate students taking display-related courses, new researchers, and engineers in related fields.
Download or read book Oxide Thin Film Transistors written by K. J. Saji and published by Nova Science Publishers. This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent flexible electronics is an emerging technology which makes use of wide band gap semiconductors that can be processed at low temperatures on glass or plastic substrates. Electronic systems that cover large area and curved surfaces together with transparency bring the possibility of numerous applications that are outside the scope of rigid wafer based electronics. Flexible electronics, electronic textiles, a wearable wellness system, and sensory skin are some of the applications of flexible electronics. The key factor in the realization of transparent electronics is the development of high performance fully transparent thin film transistors. Thin film transistors (TFTs) based on transparent conducting amorphous oxide semiconductors (TAOS) such as InGaZnO (IGZO), zinc tin oxide (ZTO), zinc indium tin oxide (ZITO), etc. provide additional functionalities like transparency, high field effect mobility and potential for room temperature processing. The performance of these TAOS based TFTs are superior to their silicon (a-Si:H TFTs) and organic TFTs. Though there are monographs and books on a-Si:H TFTs and organic TFTs, a book on TAOS based TFTs is rare. This book introduces the graduate students and beginners to the field of amorphous semiconductors. The mass production of this kind of TFTs on large area substrates involves the complications associated with controlling the composition of oxide compound semiconductor thin film material. Pulsed laser deposition allows for the growth of an oxide semiconductor in a very high oxygen rich environment while co-sputtering is an effective technique for the growth of a multicomponent film and to control the film chemical composition in a systematic and easy way. These manufacturing aspects will be of interest to those working in the industry. The review on the n channel, p channel TFTs, and the detailed description on the extraction of various TFT parameters like the threshold voltage, field effect mobility, sub threshold slope and on-off ratio etc. will be ready reckoner to those working in the field of transparent electronics.
Download or read book ZnO Thin Film Transistors for Cost Efficient Flexible Electronics written by Fábio Fedrizzi Vidor and published by Springer. This book was released on 2017-12-28 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the integration, characterization and analysis of cost-efficient thin-film transistors (TFTs), applying zinc oxide as active semiconductors. The authors discuss soluble gate dielectrics, ZnO precursors, and dispersions containing nanostructures of the material, while different transistor configurations are analyzed with respect to their integration, compatibility, and device performance. Additionally, simple circuits (inverters and ring oscillators) and a complementary design employing (in)organic semiconducting materials are presented and discussed. Readers will benefit from concise information on cost-efficient materials and processes, applied in flexible and transparent electronic technology, such as the use of solution-based materials and dispersion containing nanostructures, as well as discussion of the physical fundamentals responsible for the operation of the thin-film transistors and the non-idealities of the device.
