Download or read book Fabrication of Beta Silicon Carbide SIC Diodes Using Proton Isolation written by Coleman Jerome C. and published by . This book was released on 1995 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication of Beta Silicon Carbide beta SIC Diodes Using Proton Isolation written by Coleman Jerome C. and published by . This book was released on 1995 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide Semiconductor Device Fabrication and Characterization written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-11 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-20 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Download or read book Fabrication and Characterization of Beta Silicon Carbide Discrete Devices and Integrated Circuit written by Kobchat Wongchotigul and published by . This book was released on 1992 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III Nitride SiC and Diamond Materials for Electronic Devices Volume 423 written by D. Kurt Gaskill and published by . This book was released on 1996-11-15 with total page 824 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book differs from previous volumes on wide bandgap semiconductors in that the emphasis is specifically on materials aspects related to electronic properties and devices. Solid advances are reported in the growth techniques of all three materials groups. In particular, the critical importance of surfaces, interfaces, doping, defects and impurities is demonstrated. Potential device applications ranging from new high-frequency, high-power all-solid-state devices to unique cold-cathode electronic devices are presented. Whilst the results demonstrate real promise for a wide range of new solid-state devices that are not feasible with current production materials, it is also evident that substantial progress in materials research is needed to fulfill the real potential of these applications. Critical issues related to the electronic potential of all three materials are addressed. Topics include: device technologies - devices, metallizations, etching, and implantation; bulk and bulk-like crystal growth; film growth; defects and structural properties; doping and electrical properties and optical and field-emission properties.
Download or read book Ion Implantation Annealing and Simple Device Fabrication in Monocrystalline Beta silicon Carbide Thin Films written by John Adam Edmond and published by . This book was released on 1987 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamental Studies and Device Development in Beta Silicon Carbide written by Robert F. Davis and published by . This book was released on 1990 with total page 77 pages. Available in PDF, EPUB and Kindle. Book excerpt: The dependence of growth rate of alpha-SiC on alpha-Silicon Carbide substrates and surface morphology on temperature, source gas/carrier gas flow rate ratios, and the degree of off-axis tilt have been investigated. Theoretical and experimental studies of Aluminum and Nitrogen incorporation into 6 Hydrogen-Silicon Carbide films during deposition have also been studied. Device research has involved studies of suitable ohmic and rectifying contacts, and the fabrication and characterization of Schottky and p-n junction diodes as well as Metal-Semiconductor field effect transistors, Metal-oxide-semiconductor field effect transistor and Impact Avalanche transit-time diodes. Alpha silicon carbide, Semi-conductors, Growth rate, Aluminum dopant, Nitrogen dopant, Ohmic contacts, Schottky contacts, MESFET, MOSFET, IMPATT. (jg).
Download or read book Silicon Carbide Semiconductor Device Fabrication and Characterization written by and published by . This book was released on 1990 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of basic building blocks i.e. rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films have been fabricated and characterized. Gold forms a rectifying contact of beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it has been possible to utilize Au contact diodes for electrically characterizing SiC films.
Download or read book Synthesis and Characterization of P n Junction Diodes in Beta silicon Carbide Grown on Titanium Carbide written by Jin Wu and published by . This book was released on 1994 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Sintering of Boron carbon Doped Beta Silicon Carbide written by Wayne David Pasco and published by . This book was released on 1976 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth of Single Crystal Beta Silicon Carbide written by and published by . This book was released on 1992 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beta-SiC is a promising, wide bandgap material for high power electronic devices capable of operation at high temperatures. Its high saturation velocity, high breakdown electric field, and high thermal conductivity point to superior performance for high frequency applications. The successful fabrication of Beta-SiC devices requires high quality films to be epitaxially grown on lattice-matched substrate materials. Single crystals of Beta-SiC offer the optimum substrate material for lattice matching. The major problem to be overcome in the growth of large single crystals of Beta-SiC is polytype alpha-SiC formation. Cubic Beta-SiC crystallizes only below 2000 deg C. Above this temperature, SiC undergoes a phase transformation from the Beta-to the alpha-phase. In Phase I, we investigated two crystal growth techniques: sublimation and gas-vapor transport. We were able to grow small 3C-SiC crystals by both methods.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties and Applications of Silicon Carbide written by Rosario Gerhardt and published by BoD – Books on Demand. This book was released on 2011-04-04 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion solid Interactions written by Walter M. Gibson and published by . This book was released on 1980 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Japanese Science and Technology 1983 1984 written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch and published by . This book was released on 1985 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt:
