Download or read book Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self aligned Gate Process written by Sungkee Han and published by . This book was released on 2003 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: device integration, metal gate electrode, high K dielectric, non-self aligned gate process.
Download or read book Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self Aligned Gate Process written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In order to improve MOSFET transistor performance, aggressive scaling of devices has continued. As lateral device dimensions continue to scale down, gate oxide thicknesses must also be scaled down. According to the 2001 International Technology Roadmap for Semiconductor (ITRS) for sub-micron technology, an equivalent oxide thickness (EOT) less than 1.0 nm is required for high performance devices. However, at this thickness SiO2 has reached its scaling limit due to the high tunneling current, especially in low power devcies. The use of high K dielectrics may circumvent this impediment since physically thicker dielectrics can be used to reduce gate leakage while maintaining the same level of inversion charge. In this study, we used an alternative, non self-aligned gate process to fabricate both NMOS and PMOS devices with a variety of high K gate dielectric and metal gate electrode materials; finally their electrical properties were characterized. Most high K gate dielectric and gate metal candidates have limited thermal stability. As a result, conventional transistor fabrication process flows cannot be used. Here we developed a non self-aligned gate process, which reverses the order of the junction and the gate stack formation steps and thus allow the use of dielectrics and electrode materials that are not able to sustain high junction activation temperatures. A new mask set, ERC-6, was designed to facilitate the non-self aligned gate process. Wet and dry etching process for alternative high K gate dielectrics (HfO2, ZrO2, La2O3, Y2O3) and metal gate electrodes (Pt, Ru, RuO2, Ta, TaN) were studied. Wet etching of Pt and TaN required periodic re-baking of the photoresist to re-establish adhesion to the substrate. Reactive ion etch (RIE) processes were developed for RuO2, Ru/W, Ta/W gate electrodes. A mixture of oxygen and fluorine plasma was effective in patterning RuO2 electrodes. However, for Ru gate electrodes, e.
Download or read book Device Fabrication and Characterization for Alternative Gate Stack Devices written by Indong Kim and published by . This book was released on 2003 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: MOSFET, Scaling, High-K, Metal Gate, Silicate, HfO2.
Download or read book Device Fabrication and Characterization for Alternative Gate Stack Devices written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal and Other Short time Processing Technologies II written by Dim-Lee Kwong and published by The Electrochemical Society. This book was released on 2001 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."
Download or read book Rapid Thermal and Other Short time Processing Technologies III written by Paul J. Timans and published by The Electrochemical Society. This book was released on 2002 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 884 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Meeting Abstracts written by Electrochemical Society. Meeting and published by . This book was released on 1999 with total page 1172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Processing XIV written by G. S. Mathad and published by . This book was released on 2002 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization and Metrology for ULSI Technology 2003 written by David G. Seiler and published by American Institute of Physics. This book was released on 2003-10-08 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt: The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Topics include: integrated circuit history, challenges and overviews, front end, lithography, interconnect and back end, and critical analytical techniques. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continue the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The editors believe that this book of collected papers provides a concise and effective portrayal of industry characterization needs and the way they are being addressed by industry, academia, and government to continue the dramatic progress in semiconductor technology. Hopefully, it will also provide a basis for stimulating advances in metrology and new ideas for research and development.
Download or read book Fabless Semiconductor Manufacturing written by Chinmay K. Maiti and published by CRC Press. This book was released on 2022-11-17 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 2006 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Fabrication and Characterization of MOSFETs with Titanium Dioxide and Hafnium Dioxide as Gate Dielectrics written by Tiezhong Ma and published by . This book was released on 2001 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ULSI Process Integration written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2002 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ferroelectric Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer. This book was released on 2016-09-02 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Download or read book The Physics of Submicron Structures written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
