Download or read book Fabrication and Characterization of N silicon Metal insulator semiconductor Diodes Containing a Photoanodically Grown Insulating Layer written by Mark Douglas Rosenblum and published by . This book was released on 1988 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1989 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Annual Commencement written by Stanford University and published by . This book was released on 1987 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nitride Based Metal Insulator Semiconductor Heterostructure Material and Device Design and Characterization written by Jiechen Wu and published by . This book was released on 2014 with total page 87 pages. Available in PDF, EPUB and Kindle. Book excerpt: Al2O3/AlGaN/GaN metal-insulator-semiconductor-heterostructures (MISH) were designed, fabricated and characterized. The effects of different dielectric deposition techniques, surface treatments and post deposition treatments were investigated by comprehensive material and electrical characterization to understand the Al2O3 dielectric and Al2O3/AlGaN interfacial properties. Thermal ALD and PEALD Al2O3 thin films were successfully deposited on MBE grown AlGaN/GaN layers. An XPS study reveals the band offset of Al2O3/AlGaN interface. In addition, pre-deposition treatments show a reduction of Ga-O bonds at the interface after ALD growth. The fabrication of Al2O3/AlGaN/GaN MISH diodes were achieved with deposition of Ti/Al/Ni/Au ohmic contacts and Ni/Au gate contacts. C-V characterization of MISH diodes was applied to evaluate Al2O3/AlGaN interface states. Traps with different energy levels were differentiated by C-V hysteresis curves and multi-frequency C-V. C-V analysis suggests that PEALD provides better film quality with lower defect densities than thermal ALD. The implementation of NH3 and N2 pre-deposition surface plasma treatment and N2 post-deposition annealing can also improve interfacial properties. Al2O3 dielectric thin film leakage current and conduction mechanisms were also studied by I-V characterization. PEALD Al2O3 thin films exhibit better leakage current suppression compared to thermal ALD films. Temperature dependent I-V characterization shows that Poole-Frenkel emission dominates in dielectric current transport at medium electric fields, while at high electric fields, Fowler-Nordheim tunneling and trap-assisted tunneling dominate at low and high temperatures, respectively. Various dielectric reliability tests were employed on Al2O3 thin films. The results of time dependent dielectric breakdown (TDDB) test can be fit into 1/E field dependent model and a Weibull slope of 2.87 is extracted for PEALD Al2O3 thin films. The dielectric breakdown field distribution statistics show that PEALD Al2O3 films have a larger average dielectric breakdown field than thermal ALD films, and the plasma N2O post deposition annealing improves the average breakdown field. The improvements from integration of pre-deposition and post deposition treatments may offer a better device performance and reliability in MIS-HEMTs, and enable further progress and development of nitride based power electronics.
Download or read book Electrical Characterization of Silicon on Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Download or read book Science and Technology of Semiconductor On Insulator Structures and Devices Operating in a Harsh Environment written by Denis Flandre and published by Springer Science & Business Media. This book was released on 2006-05-06 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.
Download or read book Metal insulator semiconductor Structures and AlGaN GaN Hetero junctions Based on Cubic Group III Nitrides written by Alexander Zado and published by . This book was released on 2015 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cubic AlGaN/GaN hetero-junction field effect transistor structures were fabricated by plasma assisted molecular beam epitaxy on 3C-SiC (001) substrates. The structural quality of the layers was controlled in-situ by reflection high energy electron diffraction and ex-situ by high resolution x-ray diffraction, atomic force microscopy and time of flight secondary ion mass spectroscopy. Metal-Insulator-Semiconductor structures were realized using plasma assisted molecular beam epitaxy and plasma enhanced chemical vapour deposition. The characterization of the structures was performed using electrical techniques like capacitance-voltage-, current-voltage-, Hall effect-measurements and admittance spectroscopy.To improve the gate characteristics an insulating layer is required. Insulating SiO2 and Si3N4 layers were produced using plasma enhanced chemical vapour deposition. An in-situ method of deposition of Si3N4 directly inside the molecular beam epitaxy chamber is discussed. The metal-insulator-hetero-junction-semiconductor-structures were characterized by capacitance-voltage- and admittance-spectroscopy-measurements.Several techniques were analysed to electrically isolate the conductive substrate from the active transistor device. For the free standing high conductive 3C-SiC substrate to drop the conductivity of the cubic GaN buffer layer carbon doping was used. Due to a large conduction band offset between cubic GaN and cubic AlN asymmetric multi quantum well structures were grown to prohibit current flow towards the substrate. Using several assembly techniques transistor devices were fabricated. A cubic GaN field effect transistor operation is presented. Metal-insulator-semiconductor-hetero-junction field effect transistors with normally-on and normally-off characteristic were realized. ; eng
Download or read book Design Fabrication and Characterization of Gated Silicon Field Emission Devices written by Johann Thomas Trujillo and published by . This book was released on 1999 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Insulating Films on Semiconductors written by M. Schulz and published by Springer. This book was released on 1981-09 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham. INFOS 81 attracted 170 participants from universities, research institutes and industry. Attendants were registered from 15 nations. The biannual topical conference series will be continued by INFOS 83 to be held in Eindhoven, The Netherlands, in April 1983. The conference proceedings include all the invited (Y) and contrlDUtea (42) papers presented at the meeting. The topics range from the basic physical understanding of the properties of insulating films and their interface to semiconductors to the discussion of stability and dielectric strength as well as growing and deposition techniques which are relevant for technical applications. Strong emphasis was given to the semiconductor silicon and its native oxide; however, sessions on compound semiconductors and other insulating films also raised strong interest. The proceedings survey the present state of our understanding of the system of insulating films on semiconductors. As a new aspect of the topic, the properties of semiconductors deposited and laser processed on insulating films was in cluded for the first time.
Download or read book The Fabrication and Experimental Analysis of Metal Insulator Semiconductor Devices for Radiation Vulnerability Studies written by T. A. Williamson and published by . This book was released on 1971 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report discusses the following: The insulated gate field effect transistor (IGFET); Nuclear radiation effects on the IGFET; The fabrication of metal-insulator-silicon (MIS) capacitors; Analysis of the MIS capacitor; Testing of experimental devices, and Analysis of the experimental data.
Download or read book Fully Depleted Silicon On Insulator written by Sorin Cristoloveanu and published by Elsevier. This book was released on 2021-08-06 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices." In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator "It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan "FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France "This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." --Professor Alexander Zaslavsky, Brown University, USA "A superbly written book on SOI technology by a master in the field." --Professor Yuan Taur, University of California, San Diego, USA "The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author "It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book." Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices Discusses FD-SOI's most promising device structures for memory, sensing and emerging applications
Download or read book Metal insulator semiconductor Structures and AlGaN GaN Hetero junctions Based on Cubic Group III Nitrides written by Alexander Zado and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Two Dimensional Materials written by Rafik Addou and published by Elsevier. This book was released on 2022-02-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Two-Dimensional Materials addresses the fundamental physics and chemistry of defects in 2D materials and their effects on physical, electrical and optical properties. The book explores 2D materials such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMD). This knowledge will enable scientists and engineers to tune 2D materials properties to meet specific application requirements. The book reviews the techniques to characterize 2D material defects and compares the defects present in the various 2D materials (e.g. graphene, h-BN, TMDs, phosphorene, silicene, etc.). As two-dimensional materials research and development is a fast-growing field that could lead to many industrial applications, the primary objective of this book is to review, discuss and present opportunities in controlling defects in these materials to improve device performance in general or use the defects in a controlled way for novel applications. Presents the theory, physics and chemistry of 2D materials Catalogues defects of 2D materials and their impacts on materials properties and performance Reviews methods to characterize, control and engineer defects in 2D materials
