Download or read book Fabrication and Characterization of All Oxidep n Junction Diodes written by Lin Zhuang and published by . This book was released on 2007 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have grown ZnO and MgO mixed oxide thin films by pulsed laser deposition. Most other similar work reported in the open literature so far involved preparing wurtzite structured MgxZn1-xO (w-MZO) films on sapphire substrates with x
Download or read book Fabrication and Characterization of Beryllium implanted Vertical 6H SiC P n Junction Diodes written by Yingping Zheng and published by . This book was released on 1997 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of N silicon Metal insulator semiconductor Diodes Containing a Photoanodically Grown Insulating Layer written by Mark Douglas Rosenblum and published by . This book was released on 1988 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transparent Oxide Electronics written by Pedro Barquinha and published by John Wiley & Sons. This book was released on 2012-03-15 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at low-cost, disposable and lightweight devices for the next generation of ergonomic and functional discrete devices. Chapters cover: Properties and applications of n-type oxide semiconductors P-type conductors and semiconductors, including copper oxide and tin monoxide Low-temperature processed dielectrics n and p-type thin film transistors (TFTs) – structure, physics and brief history Paper electronics – Paper transistors, paper memories and paper batteries Applications of oxide TFTs – transparent circuits, active matrices for displays and biosensors Written by a team of renowned world experts, Transparent Oxide Electronics: From Materials to Devices gives an overview of the world of transparent electronics, and showcases groundbreaking work on paper transistors
Download or read book Handbook of Transparent Conductors written by David S. Ginley and published by Springer Science & Business Media. This book was released on 2010-09-11 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent conducting materials are key elements in a wide variety of current technologies including flat panel displays, photovoltaics, organic, low-e windows and electrochromics. The needs for new and improved materials is pressing, because the existing materials do not have the performance levels to meet the ever- increasing demand, and because some of the current materials used may not be viable in the future. In addition, the field of transparent conductors has gone through dramatic changes in the last 5-7 years with new materials being identified, new applications and new people in the field. “Handbook of Transparent Conductors” presents transparent conductors in a historical perspective, provides current applications as well as insights into the future of the devices. It is a comprehensive reference, and represents the most current resource on the subject.
Download or read book Fabrication and Characterization of Ion Implanted N superscript p Greek Letter Pi p superscript Silicon Read IMPATT Diodes written by Aditya Kumar Gupta and published by . This book was released on 1979 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Zinc Oxide Light emitting Diodes Indium Zinc Oxide Thin film Transistors and AlGaN GaN High Electron Mobility Transistor based Biosensors written by Yu-Lin Wang and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Hydrogen effects on the electrical and optical properties of p-i-n ZnO light emitting diodes (LEDs) were investigated. There were no diode characteristics or light emission observed from p-i-n ZnO LEDs unless the LEDs were annealed at 350 °C after fabrication. Annealed diodes showed band-edge electroluminescence at 385nm and a broad defect band with a peak at 930nm at room temperature. The effects of hydrogen plasma, moisture, water, and phosphoric acid solution on the annealed diode characteristics were investigated and significant degradation of electrical and optical properties were observed in all cases. The plasma-enhanced chemical vapor-deposited (PECVD) SiO2 and SiN[subscript x] passivation effects on p-i-n ZnO LEDs were also investigated.
Download or read book Fabrication and Characterization of Polymer Resistors P N and Schottky Junction Diodes by Inkjet Printing Technology written by Rajashekar Sheela and published by . This book was released on 2004 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of III V Metal oxide semiconductor written by Arif Mohammad Sonnet and published by . This book was released on 2010 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Zinc Oxide and Related Materials written by Zhe Chuan Feng and published by Taylor & Francis. This book was released on 2012-09-26 with total page 563 pages. Available in PDF, EPUB and Kindle. Book excerpt: Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a
Download or read book Fabrication and Characterization of Metal insulator metal Diode and Gray Scale Lithography written by Manal Alhazmi and published by . This book was released on 2013 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this thesis is to successfully design, fabricate, and characterize an optimum metal-insulator-metal diode that can be used as a fast switching diode in various applications such as solar energy conversion. The improvements of this type of diode will result in rectification of a wider spectrum of AC signals to usable electricity. In this project, several proposed designs of MIM diodes were successfully fabricated and characterized. Pt-Al2O3-Al metal-insulator-metal diode was fabricated to have high asymmetry in I-V curve. Additionally, in an attempt to study the effect of material properties on MIM diode's performance, four different combinations of MIIIIM diode were compared and discussed. Many processes were involved in the fabrication of these diodes such as E-beam evaporation, photolithography, reactive ion etching RIE, and Atomic Layer Deposition (ALD) technique. The fabricated tunneling diodes are intended to operate in the GHz regime and can also operate at higher frequencies (THz) by changing and scaling the dimensions. In addition to MIM diode work, this project attempted to engineer the contrast curve of polystyrene as a negative resist used for E-beam lithography using multi layer resist stack. If the resist stack has a very high contrast and its sensitivity differs between the various layers, it can be ideal for the fabrication of multi-level zone-plate/Fresnel lens.
Download or read book Fabrication and Characterization of ZnO based Light emitting Diodes written by Chi-man Luk and published by . This book was released on 2012 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the optimized growth parameters, n-ZnO:Al/i-ZnO/p-GaN:Mg heterojunction LEDs were fabricated. The electrical characteristics of the diodes were investigated. The ultraviolet (UV) electroluminescence (EL) from the device was detected at room temperature. The emission is attributed to the electron-hole radiative recombination in the ZnO region and is explained in detail by an energy band diagram. ZnO nanostructures are expected to have improved optical and electronic properties because of the quantum confinement effect. Using low-temperature aqueous chemical method, the ZnO nanorods arrays were grown on the buffer layers prepared at various temperatures. The nanorods were grown along [0001] direction. The PL measurement indicated that the emission spectrum covered a UV peak at ~ 380 nm and a broad visible band at ~ 560 nm. The PL spectra of the ZnO nanorods are independent on the growth temperature of the buffer layer. Moreover, the buffer-layer-thickness-dependent structural and optical properties were studied. The as-grown ZnO nanorods were utilized to fabricate hybrid LED with an organic semiconductor, N, N'-diphenyl-N, N'-bis(1-naphthyl)-1, 1'-biphenyl-4, 4'-diamine (?NPD), which is one of the most widely used hole transport and blue-emitting organic semiconductors. Current-voltage characteristics of the devices exhibited nonlinear rectifying behaviour. The EL spectra of the hybrid LEDs reveal a blue and broad yellowish green emission originated from the?NPD layer and the defect levels of the ZnO respectively. The origin of the emission bands from the hybrid structures will be examined.
Download or read book Metal Oxide Semiconductors written by Zhigang Zang and published by John Wiley & Sons. This book was released on 2023-12-11 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductors Up-to-date resource highlighting highlights emerging applications of metal oxide semiconductors in various areas and current challenges and directions in commercialization Metal Oxide Semiconductors provides a current understanding of oxide semiconductors, covering fundamentals, synthesizing methods, and applications in diodes, thin-film transistors, gas sensors, solar cells, and more. The text presents state-of-the-art information along with fundamental prerequisites for understanding and discusses the current challenges in pursuing commercialization and future directions of this field. Despite rapid advancements in the materials science and device physics of oxide semiconductors over the past decade, the understanding of science and technology in this field remains incomplete due to its relatively short research history; this book aims to bridge the gap between the rapidly advancing research progress in this field and the demand for relevant materials and devices by researchers, engineers, and students. Written by three highly qualified authors, Metal Oxide Semiconductors discusses sample topics such as: Fabrication techniques and principles, covering vacuum-based methods, including sputtering, atomic layer deposition and evaporation, and solution-based methods Fundamentals, progresses, and potentials of p–n heterojunction diodes, Schottky diodes, metal-insulator-semiconductor diodes, and self-switching diodes Applications in thin-film transistors, detailing the current progresses and challenges towards commercialization for n-type TFTs, p-type TFTs, and circuits Detailed discussions on the working mechanisms and representative devices of oxide-based gas sensors, pressure sensors, and PH sensors Applications in optoelectronics, both in solar cells and ultraviolet photodetectors, covering their parameters, materials, and performance Memory applications, including resistive random-access memory, transistor-structured memory devices, transistor-structured artificial synapse, and optical memory transistors A comprehensive monograph covering all aspects of oxide semiconductors, Metal Oxide Semiconductors is an essential resource for materials scientists, electronics engineers, semiconductor physicists, and professionals in the semiconductor and sensor industries who wish to understand all modern developments that have been made in the field.
Download or read book Fabrication and Characterization of Silicon Quantum Confined Diodes written by Amanda Margaret Bowhill and published by . This book was released on 1994 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1977 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Evaluation of MIS Junctions on Zinc Oxide written by Yen Jen Chen and published by . This book was released on 2014 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc oxide (ZnO) is a promising material for optoelectronic devices, with a wide bandgap and large exciton binding energy. Its high transparency in the visible wavelength region makes it an attractive material for visible-blind photodetectors. As a transparent high conducting oxide (TCO), ZnO can be doped with Al to tune its conductivity. Moreover, Al-doped ZnO (AZO) is relatively cheaper and more available compared to other TCO. AZO can form an n-n isotype heterojunction with silicon, which can be used for photodiodes and solar cells. Schottky contacts on ZnO are useful in many applications including photodetectors and metal semiconductor field-effect transistors. Combining a Schottky junction with a heterojunction of AZO/n-Si, photodiodes fabricated give high UV to dark contrast ratios. The study of metal-insulator-semiconductor (MIS) and Schottky ZnO photodiode and double junction photodiode was performed. ZnO films were deposited by RF sputtering, while AZO films were deposited by dual beam sputtering. MIS Schottky contacts were studied with different metals and different contacts. Au and Pd were chosen for their high work function, and Ag diodes gave even better results due to oxidation. Metal contacts were deposited using thermal evaporation and insulating layers Al2O3 and HfO2 deposition were achieved by atomic layer deposition. The oxide thicknesses were varied from 0 to 4 nm. I-V performance of dark, photo and UV illumination and characteristics of MIS Schottky photodiode and double junction were analyzed. For metal contact, Ag diodes gave the best performance, with a barrier height as high as 0. 798 eV and a low dark saturation current of 1. 20x10-7 A/cm2 with hafnium oxide as the insulating layer with a thickness of 2 nm. For oxide, HfO2 with a thickness of 2 nm gave the most optimum performance, with low leakage current and higher turn on voltage, and a good UV response. Ag HfO2 double junction diodes gave an ideality factor of as low as 1. 74, J0 of 2. 79x10-7 A/cm2, and a high barrier height 0. 776 eV. For solar cell results, double junction solar cell gave the performance of VOC of 0. 369 V and JSC of 16. 2 x 10-3 A/cm2.
Download or read book Fabrication and Analysis of Silicon and Germanium P N Junction Alloy Diodes written by and published by . This book was released on 1972 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
