Download or read book Experimental Studies of Plasma Etch Processes written by Jarad Daniels and published by . This book was released on 1998 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Etching Processes for Sub quarter Micron Devices written by G. S. Mathad and published by The Electrochemical Society. This book was released on 2000 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Processing written by R. G. Frieser and published by . This book was released on 1981 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Processing of Materials written by National Research Council and published by National Academies Press. This book was released on 1991-02-01 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma processing of materials is a critical technology to several of the largest manufacturing industries in the worldâ€"electronics, aerospace, automotive, steel, biomedical, and toxic waste management. This book describes the relationship between plasma processes and the many industrial applications, examines in detail plasma processing in the electronics industry, highlights the scientific foundation underlying this technology, and discusses education issues in this multidisciplinary field. The committee recommends a coordinated, focused, and well-funded research program in this area that involves the university, federal laboratory, and industrial sectors of the community. It also points out that because plasma processing is an integral part of the infrastructure of so many American industries, it is important for both the economy and the national security that America maintain a strong leadership role in this technology.

Download or read book Combined Experimental and Modeling Studies of Spatial Effects in CF4 based Plasma Etching of Silicon written by Manoj Dalvie and published by . This book was released on 1989 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Etching Processes for Interconnect Realization in VLSI written by Nicolas Posseme and published by Elsevier. This book was released on 2015-04-14 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions.This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits Focused on plasma-dielectric surface interaction Helps you further reduce the dielectric constant for the future technological nodes

Download or read book Plasma Etching Processes for CMOS Devices Realization written by Nicolas Posseme and published by Elsevier. This book was released on 2017-01-25 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm

Download or read book Plasma Processes for Semiconductor Fabrication written by W. N. G. Hitchon and published by Cambridge University Press. This book was released on 1999-01-28 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

Download or read book Modeling Simulation and Experimental Studies of Plasma Processing written by Christer Hedlund and published by . This book was released on 1997 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Symposium on Plasma Processing written by and published by . This book was released on 1992 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Surface Interactions and Processing of Materials written by O. Auciello and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: An understanding of the processes involved in the basic and applied physics and chemistry of the interaction of plasmas with materials is vital to the evolution of technologies such as those relevant to microelectronics, fusion and space. The subjects dealt with in the book include: the physics and chemistry of plasmas, plasma diagnostics, physical sputtering and chemical etching, plasma assisted deposition of thin films, ion and electron bombardment, and plasma processing of inorganic and polymeric materials. The book represents a concentration of a substantial amount of knowledge acquired in this area - knowledge which was hitherto widely scattered throughout the literature - and thus establishes a baseline reference work for both established and tyro research workers.

Download or read book Handbook of Advanced Plasma Processing Techniques written by R.J. Shul and published by Springer Science & Business Media. This book was released on 2011-06-28 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.

Download or read book Experimental Investigation of Atomic Fluorine and Oxygen Densities in Plasma Etch Processes written by Sharath Kumar Babu Janarthanaram and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was well known that atomic fluorine and oxygen radicals play a vital role in plasma etching processes. This thesis investigates the density of fluorine and oxygen radical species using different diagnostic techniques in a parallel-plate capacitively coupled reactive ion etching plasma source. The behaviour of absolute atomic fluorine density in SF6/O2/Ar plasma was investigated using appearance potential mass spectrometry as a function of feedstock mixture, gas pressure and applied rf power. Contrary to naive expectations, atomic fluorine density was found to increase with dilution of O2 in SF6 discharge operated at 100 W and reached a peak value at ≈ 20-30% O2 content. This increase in fluorine atom density can be due to decrease in fluorine atom loss rate at walls through surface recombination and production of fluorine atoms through gas- phase reactions involving SFx (where x = 1-5) and atomic oxygen. However, atomic fluorine density was found to decrease with further addition of oxygen to discharge due to decrease in SF6 partial pressure. Absolute fluorine atom density investigated using APMS technique, was found to increase with increase in gas pressure in SF6/O2/Ar discharge (70/26/4 %) operated at 100 W rf power. Increase in fluorine atom density can be mainly due to increase in SF6 partial pressure as electron density was found to be in weak correlation with pressure. A non-invasive, compact and low cost industrial sensor would always be essential to monitor any variations in the plasma. Optical emission spectroscopy was one of such diagnostic tool and using it relative variations in radical density in plasma discharge can be monitored by a popular technique known as actinometry. In this thesis, fluorine actinometry technique was adopted to investigate relative fluorine density variations in capacitively coupled discharge and for validation of fluorine actinometry, relative [F] measurements were compared with APMS measurements. At low pressure conditions, actinometric limitation was violated as relative [F] measured using actinometry had poor correlation with APMS measurements. This could be largely due to additional excitation contribution to fluorine actinometric signal. With negligible changes to discharge characteristics, addition of significant amount of O2 to SF6 discharge could possible suppress additional excitation contribution to fluorine signal as relative [F] measured using actinometry and APMS established good agreement. At higher pressures, fluorine actinometric data was proportional to APMS measurements and thus, fluorine actinometric behaviour was validated. Proportionality constant (K) required for fluorine actinometry, was evaluated and its dependence at different discharge conditions were analysed. Kinetics behaviour of electrons in O2 discharge as a function of gas pressure was investigated using Langmuir probe. Discharge transition in oxygen plasma was investigated from pressure evolution of electron energy probability function (EEPF), electron density and temperature. However, structure was observed in measured EEPF for pressure > 400 mTorr at 200 W rf power and EEPF tail found to enhance which violated inverse proportionality between ionization rate and neutral gas density in accordance to particle balance equation. Such unusual EEPF characteristic was caused mainly due to inadequate rf compensation in the probe and unaccounted variations in plasma potential when probe tip was biased. In addition to this, the behaviour of absolute [O] was investigated as a function of gas pressure using actinometry and Langmuir probe. Good agreement was achieved when relative variations of [O] from actinometry were compared to TALIF measurements under similar experimental conditions. Actinometric technique was successfully validated in monitoring the variations of ground state fluorine and oxygen for discharge pressures ≥ 200 mTorr and can be adopted in industry to monitor radical species in processing plasmas. It should be mentioned that optical emissions lines used in this work to monitor [F] and [O] could have significant dissociative contribution at low pressures.

Download or read book Proceedings of the Eleventh International Symposium on Plasma Processing written by Electrochemical Society. Dielectric Science and Technology Division and published by The Electrochemical Society. This book was released on 1996 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Tenth Symposium on Plasma Processing written by Electrochemical Society. Dielectric Science and Technology Division and published by The Electrochemical Society. This book was released on 1994 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Symposium on Highly Selective Dry Etching and Damage Control written by G. S. Mathad and published by The Electrochemical Society. This book was released on 1993 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book In situ Etch Rate Sensor Arrays for Plasma Etch Processes written by Mason Freed and published by . This book was released on 1999 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: