Download or read book Evolution of Silicon Surface Morphologies During Aqueous Fluorine Etching written by Yi-Chiau Huang and published by . This book was released on 2000 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Evolution of the Surface Morphology of Silicon During Aqueous Etching written by Theresa Anne Newton and published by . This book was released on 2000 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Understanding the Morphological Evolution of SI 111 Surfaces During Aqueous Etching written by Jaroslav Flidr and published by . This book was released on 1999 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Aqueous Etching of Silicon 100 written by Ian T. Clark and published by . This book was released on 2008 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: An etchant that produces atomically flat or near-atomically flat Si(100) surfaces has been long been sought by the microelectronics industry; however, no such etchant has yet been demonstrated. In the following I describe a combined spectroscopic and morphological investigation of Si(100) surfaces etched in two aqueous etchants: aqueous ammonium fluoride and pure deoxygenated water. For both of these systems, the etch morphology was determined using ex situ ultrahigh vacuum scanning tunneling microscopy. Information on the chemical nature of the surface species was obtained using Fourier transform infrared absorption spectroscopy in the multiple-internal-reflection geometry. A new deconvolution method, which is described here, was applied to the spectroscopic data to maximize the information extracted from these spectra. The spectroscopic data were used in conjunction with morphological data from STM experiments to determine the atomic-scale structure of the etched surfaces. During ammonium fluoride etching, the Si(100) surface was found to achieve a near-atomically-flat steady-state etch morphology characterized by & sim;200-A-wide terraces populated by alternating rows of unstrained silicon dihydrides within 30 sec. In contrast, during H2O etching, the surface structure was found to evolve over the course days, developing a surprisingly homogeneous 4-fold-symmetric morphology dominated by orthogonally oriented "stripes" running along & lang;011 & rang; directions, atomically flat terraces and several-monolayer-height hillocks. The atomic-scale structure of both etch morphologies is described, and the role of inter-adsorbate strain in the formation of the etch morphologies is discussed. Finally, the development of an organic functionalization chemistry suitable for use in silicon-resonator-based frequency-detected chemical sensing is described. The composition of these organic monolayers were characterized using Fourier transform infrared absorption spectroscopy, and the affect of monolayer surface termination on the mechanical properties of single-crystal-silicon micromechanical resonators was determined.
Download or read book Issues in Applied Physics 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 3912 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Applied Physics / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Applied Physics. The editors have built Issues in Applied Physics: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Applied Physics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Applied Physics: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Download or read book Understanding and Controlling the Step Bunching Instability in Aqueous Silicon Etching written by Hailing Bao and published by . This book was released on 2005 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2007 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrochemistry of Silicon and Its Oxide written by Xiaoge Gregory Zhang and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.
Download or read book Porous Silicon in Practice written by M. J. Sailor and published by John Wiley & Sons. This book was released on 2012-01-09 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: By means of electrochemical treatment, crystalline silicon can be permeated with tiny, nanostructured pores that entirely change the characteristics and properties of the material. One prominent example of this can be seen in the interaction of porous silicon with living cells, which can be totally unwilling to settle on smooth silicon surfaces but readily adhere to porous silicon, giving rise to great hopes for such future applications as programmable drug delivery or advanced, braincontrolled prosthetics. Porous silicon research is active in the fields of sensors, tissue engineering, medical therapeutics and diagnostics, photovoltaics, rechargeable batteries, energetic materials, photonics, and MEMS (Micro Electro Mechanical Systems). Written by an outstanding, well-recognized expert in the field, this book provides detailed, step-by-step instructions to prepare and characterize the major types of porous silicon. It is intended for those new to the fi eld. Sampling of topics covered: * Principles of Etching Porous Silicon * Etch Cell Construction and Considerations * Photonic Crystals, Microcavities, and Bragg Stacks Etched in Silicon * Preparation of Free-standing Films and Particles of Porous Silicon * Preparation of Photoluminescent Nanoparticles from Porous Silicon * Preparation of Silicon Nanowires by Electrochemical Etch of Silicon * Surface Modifi cation Chemistry and Biochemistry * Measurement of Optical Properties * Measurement of Pore Size, Porosity, Thickness, Surface Area The whole is backed by a generous use of color photographs to illustrate the described procedures in detail, plus a bibliography of further literature pertinent to a wide range of application fi elds. For materials scientists, chemists, physicists, optical physicists, biomaterials scientists, neurobiologists, bioengineers, and graduate students in those fields, as well as those working in the semiconductor industry.
Download or read book Surface Kinetics Modeling of Silicon Oxide Etching in Fluorocarbon Plasmas written by Ohseung Kwon and published by . This book was released on 2004 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fluorocarbon plasma for silicon oxide etching is a complicated system involving many ion and neutral species. Depending on the plasma condition, many difficulties arise such as RIE lag, etch stop, and low selectivity to photoresist. For a better understanding of the process it is necessary to have an appropriate physical model to describe the surface kinetics including simultaneous etching and deposition. A novel surface kinetic model, the translating mixed-layer (TML) model, has been developed. ABACUSS II, a modeling environment and simulator was used for solving differential algebraic equations that describes the surface kinetics. In the modeling, the effect of many variables were investigated including neutral and ion fluxes to the surface, sticking probabilities, surface composition, sputter etching reactions, ion enhanced chemical etching reactions and neutral-to-ion flux ratio. The model has been applied to various systems including silicon etching with chlorine chemistry, silicon oxide etching with fluorine chemistry and silicon oxide etching with fluorocarbon plasma. The verification of the model was done using measured etching yield data determined by quartz crystal microbalance (QCM) in conjunction with plasma neutral and ion concentrations/fluxes determined by mass spectrometry. The etching and deposition rates have been measured as functions of ion impinging angle, sample temperature, which are necessary for profile evolution modeling of silicon oxide etching in inductively coupled plasma. Angular dependence of etching yield of oxide in fluorocarbon plasma shows very unique behavior unlike typical ion-induced chemical etching or physical sputtering. Ion-induced deposition model was suggested and tested.
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1999 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Electrochemical Science and Engineering written by and published by John Wiley & Sons. This book was released on 2008-11-21 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: This series, formerly edited by Heinz Gerischer and Charls V. Tobias, now edited by Richard C. Alkire and Dieter M. Kolb, has been warmly welcomed by scientists world-wide which is reflected in the reviews of the previous volumes: "This is an essential book for researchers in electrochemistry; it covers areas of both fundamental and practical importance, with reviews of high quality. The material is very well presented and the choice of topics reflects a balanced editorial policy that is welcomed." —The Analyst "All the contributions in this volume are well up to the standard of this excellent series and will be of great value to electrochemists.... The editors again deserve to be congratulated on this fine collection of reviews." —Journal of Electroanalytical Chemistry and Interfacial Chemistry "...competently and clearly written." —Berichte der Bunsen- Gesellschaft für Physikalische Chemie
Download or read book Directory of Graduate Research written by and published by . This book was released on 2001 with total page 1846 pages. Available in PDF, EPUB and Kindle. Book excerpt: Faculties, publications and doctoral theses in departments or divisions of chemistry, chemical engineering, biochemistry and pharmaceutical and/or medicinal chemistry at universities in the United States and Canada.
Download or read book Anisotropic Etching of Si 100 in Aqueous Solutions written by Ankush Gupta and published by . This book was released on 2011 with total page 201 pages. Available in PDF, EPUB and Kindle. Book excerpt: The microelectronics industry has long sought an aqueous etchant that could produce atomically flat Si(100) surfaces by anisotropic etching. This dissertation shows that near-atomically-flat Si(100) surfaces can be produced by an aqueous silicon etchant - 40% NH4F (aq.). The etching of Si(100) in 40% NH4F (aq.) produced H2 bubbles as a reaction product, which led to significant roughening of the surface if not removed. A near-atomically flat surface was produced if the bubbles were periodically removed from the etching surface. Analysis of the infrared spectrum of the NH4F-etched surface showed that the surface was H-terminated. A new spectral deconvolution technique led to reinterpretation of the spectral bands and revealed the surface structure that is consistent with the STM images of the surface. Investigations of the bubble-induced roughening of Si(100) surface during NH4F etching revealed a new mechanism of {111} microfacet formation on this surface. To understand the etch kinetics that produced the observed morphologies, a fully atomistic kinetic Monte Carlo simulation of Si(100) etching was developed. The simulations showed that previously postulated models of H/Si(100) etching based solely on bond counting or interadsorbate stress cannot explain the experimental etch morphologies. The simulations suggested mechanisms that lead to the formation of flat stripes, hillocks, and rough morphologies observed on etched Si(100) surfaces. The production of long rows observed on the NH4F-etched Si(100) surface could only be explained by the fast etching of dihydrides bonded to monohydrides - termed as "[alpha]-dihydrides". In addition, a comprehensive study of the vibrational spectrum of various Hterminated Si surfaces produced by NH4F (aq.) etching was performed using density functional theory. The simulations predicted stretch mode energies within 2% of the experimentally observed; however, the accuracy of the calculations was strongly affected by interadsorbate strain. Simulation of point defects on H/Si(100) surfaces provided insights into the origin of large heterogeneous broadening observed on NH4F-etched Si(100) surfaces.
Download or read book Electrochemistry of Nanomaterials written by Gary Hodes and published by John Wiley & Sons. This book was released on 2001-05-25 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Engineering of nanophase materials and devices is of vital interest in electronics, semiconductors and optics, catalysis, ceramics and magnetism. Research associated with nanoparticles has widely spread and diffused into every field of scientific research, forming a trend of nanocrystal engineered materials. Electrochemical methods are widely used for the preparation of nanoparticles and the electrochemical properties of such nanomaterials are most relevant for their applications. This comprehensive reference work will appeal to advanced graduate students and researchers in the field specialized in electrochemistry, materials physics and materials science.
Download or read book Crystalline Silicon written by Sukumar Basu and published by BoD – Books on Demand. This book was released on 2011-07-27 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoelectronic material. The further research and development is necessary to find out the treasures hidden within this material. The book presents different forms of silicon material, their preparation and properties. The modern techniques to study the surface and interface defect states, dislocations, and so on, in different crystalline forms have been highlighted in this book. This book presents basic and applied aspects of different crystalline forms of silicon in wide range of information from materials to devices.
