Download or read book ETUDE PHYSIQUE ET REALISATION D HETEROSTRUCTURES GAINAS GAAS GAALAS SUR SUBSTRATS GAAS written by XAVIER.. MARCADET and published by . This book was released on 1996 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: CE MEMOIRE PRESENTE UNE ETUDE DE LA CROISSANCE PAR EPITAXIE PAR JETS MOLECULAIRES ET DES PROPRIETES DES HETEROSTRUCTURES GAINAS/GAAS/GAALAS EPITAXIEES SUR DES SUBSTRATS DE GAAS D'AXE POLAIRE . NOUS AVONS DETERMINE PAR RHEED LES DIAGRAMMES DE RECONSTRUCTIONS DE SURFACE EN COURS DE CROISSANCE ET STATIQUES, PUIS NOUS LES AVONS UTILISE POUR LOCALISER LES CONDITIONS DE CROISSANCE OPTIMALES POUR LES HETEROSTRUCTURES EPITAXIEES SUR DES SUBSTRATS GAAS (). LA COMPARAISON ENTRE LES MORPHOLOGIES DE SURFACE DES FILMS DE GAAS (MICROSCOPIE A FORCE ATOMIQUE) EPITAXIES SUR DES SUBSTRATS GAAS () VICINAUX DESORIENTES VERS DES DIRECTIONS DIFFERENTES MONTRE QUE LES MARCHES LES PLUS STABLES SONT LES MARCHES DESCENDANT VERS LES DIRECTIONS EQUIVALENTES 2, 2 ET 2. UNE EXPLICATION EST DONNEE POUR TOUTES LES MORPHOLOGIES DE SURFACE OBSERVEES SUR DES COUCHES TAMPON DE GAAS (MICROSCOPIE OPTIQUE NOMARSKI), LAQUELLE EST BASEE SUR LA LONGUEUR DE DIFFUSION DU GALLIUM ET SUR L'EQUILIBRE LOCAL DES MARCHES. EN RESUME, AFIN D'OBTENIR DES SURFACES D'ASPECT MIROIR, UN MODE DE CROISSANCE PAR AVANCEE DE MARCHES EST NECESSAIRE POUR LES SUBSTRATS DESORIENTES VERS 2, ALORS QU'UN MODE DE CROISSANCE PAR NUCLEATION D'ILOTS EST NECESSAIRE POUR LES SUBSTRATS DESORIENTES DANS LA DIRECTION OPPOSEE 11. NOUS AVONS EFFECTUE UNE ETUDE SYSTEMATIQUE DE L'INFLUENCE DE LA TEMPERATURE DE CROISSANCE SUR LA LARGEUR DES PICS DE PHOTOLUMINESCENCE DE PUITS QUANTIQUES GAINAS/GAAS. LES MEILLEURS RESULTATS (E2MEV) ONT ETE OBTENUS SUR DES SUBSTRATS DESORIENTES DE 2 VERS 2 AVEC UNE SURFACE STATIQUE SITUEE DANS LA ZONE DE TRANSITION ENTRE LES RECONSTRUCTIONS DE SURFACE (2X2) ET (19X19)R23.4. LA REEVAPORATION DE L'INDIUM EN FONCTION DE LA TEMPERATURE A ETE DETERMINEE QUANTITATIVEMENT A PARTIR DE LA POSITION DES PICS PL. NOUS TROUVONS QU'ELLE EST COMPARABLE AVEC CELLE OBTENUE SUR DES PUITS QUANTIQUES EPITAXIES SIMULTANEMENT SUR DES SUBSTRATS (100). LE PROFIL GRADUEL DE COMPOSITION EN INDIUM DANS LES PUITS QUANTIQUES GAINAS/GAAS(), INDUIT PAR LA SEGREGATION DE L'IN DURANT LA CROISSANCE, EST DECRIT QUANTITATIVEMENT A PARTIR D'UN MODELE PHENOMENOLOGIQUE SIMPLE ASSOCIE A DES MESURES IN SITU DE SPECTROSCOPIE DE PHOTOEMISSION X. L'ETAT DE DEFORMATION DES PUITS QUANTIQUES ET DES SUPERRESEAUX GAINAS/GAAS() EST ETUDIE AU MOUYEN DE LA PHOTOLUMINESCENCE ET DE LA DOUBLE DIFFRACTION DE RAYONS X. NOUS MONTRONS QU'IL EST POSSIBLE D'INCORPORER PLUS D'INDIUM DANS UN PUITS GAINAS () QUE DANS UN PUITS (100) AVANT QU'UNE DEGRADATION DES INTERFACES APPARAISSE. LE CHAMP PIEZO-ELECTRIQUE DANS LES PUITS CONTRAINTS GA#0#.#8IN AS/GAAS(111) EST DETERMINE A PARTIR DE MESURES DE PHOTOREFLECTANCE ET LES VALEURS EXPERIMENTALES SE SITUENT ENTRE 110 ET 150 KV/CM. ENFIN, NOUS AVONS FABRIQUE AVEC SUCCES UN LASER A PUITS QUANTIQUE GAINAS CONTRAINT ET A GRADIENT D'INDICES AVEC UN RENDEMENT QUANTIQUE INTERNE ATTEIGNANT 95%

Download or read book Optical Properties of Semiconductor Nanostructures written by Marcin L. Sadowski and published by Springer Science & Business Media. This book was released on 2000-06-30 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical methods for investigating semiconductors and the theoretical description of optical processes have always been an important part of semiconductor physics. Only the emphasis placed on different materials changes with time. Here, a large number of papers are devoted to quantum dots, presenting the theory, spectroscopic investigation and methods of producing such structures. Another major part of the book reflects the growing interest in diluted semiconductors and II-IV nanosystems in general. There are also discussions of the fascinating field of photonic crystals. `Classical' low dimensional systems, such as GsAs/GaAlAs quantum wells and heterostructures, still make up a significant part of the results presented, and they also serve as model systems for new phenomena. New materials are being sought, and new experimental techniques are coming on stream, in particular the combination of different spectroscopic modalities.

Download or read book Molecular Beam Epitaxy written by John Wilfred Orton and published by . This book was released on 2015 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.

Download or read book Semiconductor Optoelectronic Devices written by Joachim Piprek and published by Elsevier. This book was released on 2013-10-22 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics has become an important part of our lives. Wherever light is used to transmit information, tiny semiconductor devices are needed to transfer electrical current into optical signals and vice versa. Examples include light emitting diodes in radios and other appliances, photodetectors in elevator doors and digital cameras, and laser diodes that transmit phone calls through glass fibers. Such optoelectronic devices take advantage of sophisticated interactions between electrons and light. Nanometer scale semiconductor structures are often at the heart of modern optoelectronic devices. Their shrinking size and increasing complexity make computer simulation an important tool to design better devices that meet ever rising perfomance requirements. The current need to apply advanced design software in optoelectronics follows the trend observed in the 1980's with simulation software for silicon devices. Today, software for technology computer-aided design (TCAD) and electronic design automation (EDA) represents a fundamental part of the silicon industry. In optoelectronics, advanced commercial device software has emerged recently and it is expected to play an increasingly important role in the near future. This book will enable students, device engineers, and researchers to more effectively use advanced design software in optoelectronics. - Provides fundamental knowledge in semiconductor physics and in electromagnetics, while helping to understand and use advanced device simulation software - Demonstrates the combination of measurements and simulations in order to obtain realistic results and provides data on all required material parameters - Gives deep insight into the physics of state-of-the-art devices and helps to design and analyze of modern optoelectronic devices

Download or read book The Physics and Fabrication of Microstructures and Microdevices written by Michael J. Kelly and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: les Houches This Winter School on "The Physics and Fabrication of Microstructures" originated with a European industrial decision to investigate in some detail the potential of custom-designed microstructures for new devices. Beginning in 1985, GEC and THOMSON started a collaboration on these subjects, supported by an ESPRIT grant from the Commission of the European Com munity. To the outside observer of the whole field, it appears clear that the world effort is very largely based in the United States and Japan. It also appears that cooperation and dissemination of results are very well organised outside Europe and act as a major influence on the development of new concepts and devices. In Japan, a main research programme of the Research and Development for Basic Technology for Future Industries is focused on "Future Electron Devices". In Japan and in the United States, many workshops are organised annually in order to bring together the major specialists in industry and academia, allowing fast dissemination of advances and contacts for setting up cooperative efforts.

Download or read book Semiconductor Device Reliability written by A. Christou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 571 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.

Download or read book X Ray and Neutron Dynamical Diffraction written by André Authier and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects the proceedings of the 23rd International Course of Crystallography, entitled "X-ray and Neutron Dynamical Diffraction, Theory and Applications," which took place in the fascinating setting of Erice in Sicily, Italy. It was run as a NATO Advanced Studies Institute with A. Authier (France) and S. Lagomarsino (Italy) as codirectors, and L. Riva di Sanseverino and P. Spadon (Italy) as local organizers, R. Colella (USA) and B. K. Tanner (UK) being the two other members of the organizing committee. It was attended by about one hundred participants from twenty four different countries. Two basic theories may be used to describe the diffraction of radiation by crystalline matter. The first one, the so-called geometrical, or kinematical theory, is approximate and is applicable to small, highly imperfect crystals. It is used for the determination of crystal structures and describes the diffraction of powders and polycrystalline materials. The other one, the so-called dynamical theory, is applicable to perfect or nearly perfect crystals. For that reason, dynamical diffraction of X-rays and neutrons constitutes the theoretical basis of a great variety of applications such as: • the techniques used for the characterization of nearly perfect high technology materials, semiconductors, piezoelectric, electrooptic, ferroelectric, magnetic crystals, • the X-ray optical devices used in all modem applications of Synchrotron Radiation (EXAFS, High Resolution X-ray Diffractometry, magnetic and nuclear resonant scattering, topography, etc. ), and • X-ray and neutron interferometry.

Download or read book Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems written by Bekkay Hajji and published by Springer Nature. This book was released on 2020-08-14 with total page 858 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book includes papers presented at the Second International Conference on Electronic Engineering and Renewable Energy (ICEERE 2020), which focus on the application of artificial intelligence techniques, emerging technology and the Internet of things in electrical and renewable energy systems, including hybrid systems, micro-grids, networking, smart health applications, smart grid, mechatronics and electric vehicles. It particularly focuses on new renewable energy technologies for agricultural and rural areas to promote the development of the Euro-Mediterranean region. Given its scope, the book is of interest to graduate students, researchers and practicing engineers working in the fields of electronic engineering and renewable energy.

Download or read book ICREEC 2019 written by Ahmed Belasri and published by Springer Nature. This book was released on 2020-06-10 with total page 659 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights peer reviewed articles from the 1st International Conference on Renewable Energy and Energy Conversion, ICREEC 2019, held at Oran in Algeria. It presents recent advances, brings together researchers and professionals in the area and presents a platform to exchange ideas and establish opportunities for a sustainable future. Topics covered in this proceedings, but not limited to, are photovoltaic systems, bioenergy, laser and plasma technology, fluid and flow for energy, software for energy and impact of energy on the environment.

Download or read book Long Wavelength Semiconductor Lasers written by Govind Agrawal and published by Springer. This book was released on 2012-06-12 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ILm. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8--0. 9 ILm, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage of low losses in silica fibers occurring around 1. 3 and 1. 55 ILm, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.

Download or read book Single Charge Tunneling written by Hermann Grabert and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of single charge tunneling comprises of phenomena where the tunneling of a microscopic charge, usually carried by an electron or a Cooper pair, leads to macro scopically observable effects. The first conference entirely devoted to this new field was the NATO Advanced Study Institute on Single Charge Tunneling held in Les Hauches, France, March 5-15, 1991. This book contains a series of tutorial articles based on lectures presented at the meeting. It was intended to provide both an introduction for nonexperts and a valuable reference summarizing the state of the art of single charge tun neling. A complementary publication with contributions by participants of the NATO Advanced Study Institute is the Special Issue on Single Charge Tunneling of Zeitschrift für Physik B, Vol. 85, pp. 317-468 (1991 ). That issue with original papers provides a snapshot af the leading edge of current research in the field. The success of the meeting and the publicatian of this volume was made possible through the generaus support af the NATO Scientific A:ffairs Division, Brussels, Belgium. The Centre de Physique des Hauches has provided a superbly situated conference site and took care af many lacal arrangements. Both far the preparation of the conference and the handling af some manuscripts the suppart af the Centre d 'Etudes de Saclay was essential. The editing of the proceedings volume would not have been passible without the dedicated efforts of Dr. G. -1. Ingald, who tailared a 1\.

Download or read book Solid State Mid Infrared Laser Sources written by Irina T. Sorokina and published by Springer Science & Business Media. This book was released on 2003-07-10 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book describes the most advanced techniques for generating coherent light in the mid-infrared region of the spectrum. These techniques represent diverse areas of photonics and include heterojunction semiconductor lasers, quantum cascade lasers, tunable crystalline lasers, fiber lasers, Raman lasers, and optical parametric laser sources. Offering authoritative reviews by internationally recognized experts, the book provides a wealth of information on the essential principles and methods of the generation of coherent mid-infrared light and on some of its applications. The instructive nature of the book makes it an excellent text for physicists and practicing engineers who want to use mid-infrared laser sources in spectroscopy, medicine, remote sensing and other fields, and for researchers in various disciplines requiring a broad introduction to the subject.

Download or read book Nonlinear Optical Effects in Organic Polymers written by J. Messier and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 393 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photonics, the counterpart of electronics, involves the usage of Photons instead of electrons to process information and perform various switching operations. Photonics is projected to be the technology of the future because of the gain in speed, processing and interconnectivity of network. Nonlinear optical processes will play the key role in photonics Where they can be used for frequency conversion, optical switching and modulation. Organic molecules and polymers have emerged as a new class of highly promising nonlinear optical materials Which has captured the attention of scientists world wide. The organic systems offer the advantage of large nonresonant nonlinearities derived from the 1T electrons contribution, femtosecond response time and the flexibility to modify their molecular structures. In addition, organic polymers can easily be fabricated in various device structures compatible with the fiber-optics communication system. The area of nonlinear optics of organic molecules and polymers offers exciting opportunities for both fundamental research and technologic development. It is truly an interdisciplinary area. This proceeding is the outcome of the first NATO Advanced Research WOrkshop in this highly important area. The objective of the workshop was to provide a forum for scientists of varying background from both universities and industries to come together and interface their expertize. The scope of the workshop was multidisciplinary with active participations from Chemists, physicists, engineers and materials scientists from many countries.

Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

Download or read book III Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Download or read book Ultrafast Optics V written by Shuntaro Watanabe and published by Springer. This book was released on 2014-11-22 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together in a single volume the most up-to-date results in the field presented at Ultrafast Optics and Applications of High Field and Short Wavelength Sources 2005. The volume contains keynote and invited contributions together with carefully selected regular contributions. The book aims at the highest level of presentation to make it useful as a reference for those working in the field.

Download or read book Quantum Well Lasers written by Peter S. Zory Jr. and published by Elsevier. This book was released on 2012-12-02 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment of quantum well laser basics* Covers strained quantum well lasers* Explores the different state-of-the-art quantum well laser types* Provides key information on future laser technologies