Download or read book Etching Chemistry of III V Semiconductors and the Development of Surface Roughness written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This research addresses the need for fundamental information concerning halogen etching of III-V semiconductors. The reactions of halogens with semiconductor surfaces are the fundamental chemical interactions in processes employed for device manufacture. In this work, the reactions of XeF2, Cl2 and I2 with III-V semiconductor surfaces were investigated with synchrotron-based soft x-ray photoelectron spectroscopy, low energy electron diffraction and scanning tunneling microscopy. Fluorine reaction grows films of group III fluorides, which can be used as dielectric materials. Chlorine is the most widely used halogen for dry etching, while iodine has been proposed for use as a "gentle" etchant. We found that, for all of the halogen reactions, the initial adsorption depends on the surface reconstruction, stoichiometry and condition. Some surfaces passivate, while others spontaneously etch at room temperature. The passivated surfaces are well-ordered and covered with approximately one monolayer of adsorbed halogen. The etched surfaces, on the other hand, are considerably rough and atomically disordered. A microscopic model is proposed which assumes that halogen atoms preferentially adsorb onto a group III atom if the surface is initially well-ordered. This microscopic model can explain why certain surfaces etch, while others form ordered overlayers.
Download or read book Etching of III V Semiconductors written by Peter H. L. Notten and published by Elsevier Science & Technology. This book was released on 1991 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Layer Processing written by Thorsten Lill and published by John Wiley & Sons. This book was released on 2021-06-28 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn about fundamental and advanced topics in etching with this practical guide Atomic Layer Processing: Semiconductor Dry Etching Technology delivers a hands-on, one-stop resource for understanding etching technologies and their applications. The distinguished scientist, executive, and author offers readers in-depth information on the various etching technologies used in the semiconductor industry, including thermal, isotropic atomic layer, radical, ion-assisted, and reactive ion etching. The book begins with a brief history of etching technology and the role it has played in the information technology revolution, along with a collection of commonly used terminology in the industry. It then moves on to discuss a variety of different etching techniques, before concluding with discussions of the fundamentals of etching reactor design and newly emerging topics in the field such as the role played by artificial intelligence in the technology. Atomic Layer Processing includes a wide variety of other topics as well, all of which contribute to the author's goal of providing the reader with an atomic-level understanding of dry etching technology sufficient to develop specific solutions for existing and emerging semiconductor technologies. Readers will benefit from: A complete discussion of the fundamentals of how to remove atoms from various surfaces An examination of emerging etching technologies, including laser and electron beam assisted etching A treatment of process control in etching technology and the role played by artificial intelligence Analyses of a wide variety of etching methods, including thermal or vapor etching, isotropic atomic layer etching, radical etching, directional atomic layer etching, and more Perfect for materials scientists, semiconductor physicists, and surface chemists, Atomic Layer Processing will also earn a place in the libraries of engineering scientists in industry and academia, as well as anyone involved with the manufacture of semiconductor technology. The author's close involvement with corporate research & development and academic research allows the book to offer a uniquely multifaceted approach to the subject.
Download or read book State of the Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2002 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III V Compound Semiconductors and Devices written by Keh Yung Cheng and published by Springer Nature. This book was released on 2020-11-08 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Download or read book Pits and Pores II written by P. Schmuki and published by The Electrochemical Society. This book was released on 2001 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Guide to References on III V Semiconductor Chemical Etching written by A. R. Clawson and published by . This book was released on 2001 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty Third State of the Art Program on Compound Semiconductors SOTAPOCS XXIII written by F. Ren and published by The Electrochemical Society. This book was released on 1995 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Pits and Pores III written by P. Schmuki and published by The Electrochemical Society. This book was released on 2006 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Enhanced Plasma Etching for Group III V Semiconductors written by Alexandros T. Demos and published by . This book was released on 1993 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dry Etching for Microelectronics written by Ronald A. Powell and published by North-Holland. This book was released on 1984 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book is the inclusion of an extensive literature review of dry processing, compiled by search of computerized data bases. A subject index allows ready access to the key points raised in each of the chapters.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductors Dielectrics and Metals for Nanoelectronics 13 written by S. Kar and published by The Electrochemical Society. This book was released on 2015 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science and Technology of Semiconductor Surface Preparation Volume 477 written by Gregg S. Hagashi and published by . This book was released on 1997-09-30 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of semiconductor wafer processing is rapidly changing. Pure device performance is no longer sufficient to ensure a technology's success as IC chips approach 1GB. Yield, reliability, cost and manufacturability are principal drivers of the industry. Great strides have been made in understanding the science and impact of front-end (pre-metal) chemical surface preparations and are beginning to influence the 'real' technology and its evolution. Efforts in understanding particle and metals removal, along with Si surface etching and microroughness are prime examples of areas where work is beginning to pay off together with processes related to the back-end (post-metal). The focus of this book is to report new findings and to discuss surface preparation with an emphasis on gaining a mechanistic understanding of the underlying science upon which the technology is based. Topics include: megasonic cleaning; SC1 technology; surface preparation and gate oxide reliability; CMP/CMP cleaning; post-etch processing; surface microroughness; wet chemical cleaning and gate oxide integrity; analytical studies of surfaces; wet chemical cleaning/etching; dry wafer cleaning; and environmentally friendly processing.
Download or read book Low Damage Etching of III V Semiconductors for the Fabrication of Nanoelectronic Devices written by Erik W. Berg and published by . This book was released on 2000 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanoscaled Films and Layers written by Laszlo Nanai and published by BoD – Books on Demand. This book was released on 2017-05-24 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, scientific investigations and technological developments have resulted in many new results. Direct applications of quantum mechanical laws to system with length scales lower than 100 nm (nano) had opened a way to construction of new equipment in the field f.e. of nano- and optoelectronics. This book fits into this trend summarizing the results related to discoveries and technological applications of nanolayer in different fields of material science and even life science. The chapters are organized into three subfields: 1) Preparation and fabrications of nanolayers with different methods. 2) Description of recent achievements related to very important III-V heterostructures. 3) Descriptions of mechanical, thermal, optoelectronic, photocatalytic, and tribological properties of nanolayered structures. Some environmentally friendly applications are also treated in this book. The presented book provides a description of specific and original results obtained by authors. We hope that the volume will be of interest for a wide range of readers working in the field of material science.
Download or read book Inductively Coupled Plasma Etching of III V Semiconductors in BCl 3 Based Chemistries written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A parametric study of etch rates and surface morphologies of In-containing compound semiconductors (InP, InGaAs, InGaAsP, InAs and AlInAs) obtained by BClj-based Inductively Coupled Plasmas is reported. Etch rates in the range 1,500-3,000 & min. are obtained for all the materials at moderate source powers (500 W), with the rates being a strong function of discharge composition, rf chuck power and pressure. Typical root-mean-square surface roughness of-5 nm were obtained for InP, which is worse than the values obtained for Ga-based materials under the same conditions ( -1 run). The near surface of etched samples is typically slightly deficient in the group V element, but the depth of this deficiency is small (a few tens of angstroms).
