Download or read book Epitaxial Growth of Calcium Hafnate Thin Films on Various Substrates and Application to Gate Dielectric with Pulsed Laser Deposition written by Yongwook Kwon and published by . This book was released on 2002 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth Part A written by J Matthews and published by Elsevier. This book was released on 2012-12-02 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Download or read book Epitaxial Growth written by J. W. Matthews and published by Elsevier. This book was released on 2013-10-22 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth Part B is the second part of a collection of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The topics discussed are the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The methods used to prepare and examine thin films are described and a list of the overgrowth-substrate combinations studied so far is given.
Download or read book Reglement der Brand Assecurations Societ t written by and published by . This book was released on 1769 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Oxide Thin Films II Volume 401 written by James S. Speck and published by . This book was released on 1996-03-29 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Download or read book Thin Film Growth of Dielectric Materials by Pulsed Laser Deposition written by Jason Christopher Anders and published by . This book was released on 2014 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of SryCa1-yZr1-xTixO3 (SCZT) with x = 0.8, y = 0.01, CaHf1-xTixO3 (CHT) with x = 0.8, and xBiScO3 - (1-x) BaTiO3 with x = 0.36 (BSBT(36/64)) showing a high permittivity are useful both in capacitor applications. These dielectric thin films with a SrRuO3 (SRO) conductive bottom electrodes were prepared by using pulsed laser deposition on 100 La0.3Sr0.7Al0.65Ta0.35O3 (LSAT) single crystal substrates. In a search of optimal conditions to achieve epitaxially grown SCZT, CHT, BSBT(36/64), and SRO thin films, different substrate temperatures (600 C, 650 C, 750 C, and 800 C) and different partial pressures of oxygen (50 mTorr, 100 mTorr and 300 mTorr) in the chamber were used during deposition onto LSAT substrates. The optimized deposition conditions for conductive buffer layer of SRO film required 300 mTorr of oxygen partial pressure and substrate temperature of 750 C. The thorough structural and chemical studies of SCZT, CHT and BSBT(36/64) films were done by using SEM (scanning electron microscopy), AFM (atomic force microscopy), and XRD (X-ray diffraction) measurements. Sputtered gold top electrodes were added to the samples, along with etching to the SRO conductive buffer layer. These conductive electrodes were used to generate an AC electric field between the top electrodes and conductive buffer layer. Electrical characterizations of thin films such as complex permittivity, resistance and capacitance of grains and grain boundaries were performed using AC impedance spectroscopy, with curve fitting using Z-View software.
Download or read book Epitaxial Growth of Metal Fluoride Thin Films by Pulsed laser Deposition written by and published by . This book was released on 1995 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have studied growth of GdLiF4 thin films for optical waveguide applications. Epitaxial, c-axis oriented GdLiF4 films wer grown from undoped GdLiF4 targets in an on-axis Pulsed-laser deposition geometry on (100) CaF2. These films exhibit a high density of particulates on the surface which are ejected from the target in the ablation process. Growth from Nd-doped polycrystalline GdLiF4 ablation targets results in smooth films with lower particulate densities, as Nd doping increases the optical absorption of GdLiF4 at the ablation laser wavelength 193 nm and permits efficient pulsed-laser deposition. Optical emission spectra of the ablation pume reveals the presence of atomic F, Gd, and Li, indicating the dissociation of the metal-fluorine bonds in the ablation process. In addition, we find that the residual background oxygen pressure must be reduced to avoid formation of Gd4O3F6 as an impurity oxyfluoride phase in the films.
Download or read book Epitaxial Oxide Thin Films and Heterostructures written by and published by . This book was released on 1994 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Oxide Thin Films and Heterostructures written by and published by . This book was released on 1994 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth Principles and Applications Volume 570 written by Albert-László Barabási and published by . This book was released on 1999-08-26 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Download or read book Epitaxial Growth and Characterization of CaVO3 Thin Films written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial thin films of CaVO3 were synthesized on SrTiO3, LaAlO3 and (La{sub 0.27}Sr{sub 0.73})(Al{sub 0.65}Ta{sub 0.35})O3 substrates by pulsed laser deposition. All CaVO3 films, independent of epitaxial strain, exhibit metallic and Pauli paramagnetic behavior as CaVO3 single crystals. X-ray absorption measurements confirmed the 4+ valence state for Vanadium ions. With prolonged air exposure, an increasing amount of V{sup 3+} is detected and is attributed to oxygen loss in the near surface region of the films.
Download or read book Epitaxial Oxide Thin Films written by and published by . This book was released on 1997 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Research and Development written by and published by Academic Press. This book was released on 1997-11-14 with total page 331 pages. Available in PDF, EPUB and Kindle. Book excerpt: Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
Download or read book Epitaxial Growth and Characterization of Thin Films and Superlattices of Wide Band Gap II VI Semiconductors Grown by Pulsed Laser Deposition written by Shengxi Duan and published by . This book was released on 1994 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Thin Film Deposition written by Krishna Seshan and published by William Andrew. This book was released on 2012-12-06 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry
Download or read book Development of Synthesis Routes for Epitaxial Oxide Thin Films written by Jonathon Lee Schad and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the deposition method best suited for depositing an oxide thin film can be the difference between measuring the intrinsic properties of the thin film and measuring extrinsic properties arising from defects, impurity phases, and contamination. In this work, unique synthesis routes for the deposition of three epitaxial oxide thin films is presented. Applying these new routes, new material properties were able to be discerned that had been concealed in thin films deposited utilizing conventional methods. Dual off-axis RF sputtering of Bi-rich BiFeO3̳ targets was employed to deposit a 1 [mu]m-thick multiferroic BiFeO3̳ film on various (111)p̳c̳-orientated substrates with cubic and orthorhombic symmetries. Using non-resonant x-ray magnetic scattering (NXMS) and neutron diffraction, the magnetic domain populations in the BiFeO3̳ were measured. We found that growing on reduced-symmetry substrate NdGaO3̳ (011)o̳, yields a BiFeO3̳ film with a single ferroelectric, structural, and magnetic domain consistent across the whole sample. The single domain remains stable even after switching a region of the sample ferroelectrically up to 10,000 times. Using NXMS polarimetry we confirm that there is a change in the magnetic polarity of the BiFeO3̳ domain after ferroelectric switching, demonstrating the coupling of the magnetic and ferroelectric orders in monodomain (111)p̳c̳-orientated BiFeO3 ̳ thin films. Using reactive RF sputtering of a pure Fe target, phase pure deposition of antiferromagnetic insulator [alpha]-Fe2O3̳ was achieved. SQUID magnetometry confirms the absence of any ferromagnetic minority domains in the film. We showed that the Morin transition temperature, above which [alpha]-Fe2̳O3̳ has a weak canted moment, decreases when reducing the thickness of the film. For films 10 nm and thinner, the Morin transition was suppressed completely. Using the XMLD contrast of the 10 nm-thick [alpha]-Fe2̳O3̳ film, X-ray Photoemission Electron Microscopy (PEEM) measurements uncovered a complex mosaic of sub-micron size antiferromagnetic domains connected by a network of antiferromagnetic spin vortices. The vortices were mostly found in vortex/antivortex pairs which could be annihilated through the application of an external magnetic field. When a 1 nm-thick Co layer was overlayed, the mosaic of domains present in the [alpha]-Fe2̳O3̳ was coupled to the Co which takes on the same mosaic pattern. Pulsed laser deposition of SrO and chemical vapor deposition of a TiO2̳ precursor gas were used simultaneously to deposit high quality SrTiO3 thin films in a hybrid deposition technique we called metal-organic pulsed laser deposition (MOPLD). We demonstrated a conductive 2-dimensional electron gas (2DEG) at the interface between MOPLD-grown SrTiO3 and PLD-grown LaAlO3̳, indicative that the SrTiO3̳ thin film is highly stoichiometric. The increased stoichiometry control afforded by MOPLD also grants the ability to control the point defects in the system. By decreasing the abundance of point defects, quantum properties of SrTiO3̳ become accessible.
