Download or read book Epitaxial Graphene on Silicon Carbide written by Gemma Rius and published by CRC Press. This book was released on 2018-01-19 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Download or read book Epitaxial Graphene on Silicon Carbide written by Gemma Rius and published by CRC Press. This book was released on 2018-01-19 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Download or read book Epitaxial Graphene on Silicon Carbide written by Gemma Rius and published by Jenny Stanford Publishing. This book was released on 2018-01-31 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as both in situ and ex situ conditioning techniques, including H2 pre-deposition annealing, chemical mechanical polishing, etc. It generously describes growth studies including the most popular techniques for high quality and controlled deposition such as ultrahigh vacuum-processing, partial-pressure, or graphite cap controlled-sublimation techniques. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia."--Provided by publisher.
Download or read book Graphene written by Viera Skakalova and published by Elsevier. This book was released on 2014-02-16 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene: Properties, Preparation, Characterisation and Devices reviews the preparation and properties of this exciting material. Graphene is a single-atom-thick sheet of carbon with properties, such as the ability to conduct light and electrons, which could make it potentially suitable for a variety of devices and applications, including electronics, sensors, and photonics. Chapters in part one explore the preparation of , including epitaxial growth of graphene on silicon carbide, chemical vapor deposition (CVD) growth of graphene films, chemically derived graphene, and graphene produced by electrochemical exfoliation. Part two focuses on the characterization of graphene using techniques including transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy. These chapters also discuss photoemission of low dimensional carbon systems. Finally, chapters in part three discuss electronic transport properties of graphene and graphene devices. This part highlights electronic transport in bilayer graphene, single charge transport, and the effect of adsorbents on electronic transport in graphene. It also explores graphene spintronics and nano-electro-mechanics (NEMS). Graphene is a comprehensive resource for academics, materials scientists, and electrical engineers working in the microelectronics and optoelectronics industries. Explores the graphene preparation techniques, including epitaxial growth on silicon carbide, chemical vapor deposition (CVD), chemical derivation, and electrochemical exfoliation Focuses on the characterization of graphene using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy A comprehensive resource for academics, materials scientists, and electrical engineers
Download or read book Epitaxial Graphene on Silicon Carbide written by Michael W. Sprinkle and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past several years, epitaxial graphene on silicon carbide has been transformed from an academic curiosity of social scientists to a leading candidate material to replace silicon in post-CMOS electronics. This has come with rapid development of growth technologies, improved understanding of epitaxial graphene on the polar faces of silicon carbide, and new device fabrication techniques. The contributions of this thesis include refinement and improved understanding of graphene growth on the silicon- and carbon-faces in the context of managed local silicon partial pressure, high-throughput epitaxial graphene thickness measurement and uniformity characterization by ellipsometry, observations of nearly ideal graphene band structures on rotationally stacked carbon-face multilayer epitaxial graphene, presentation of initial experiments on localized in situ chemical modification of epitaxial graphene for an alternate path to semiconducting behavior, and novel device fabrication methods to exploit the crystal structure of the silicon carbide substrate. The latter is a particularly exciting foray into three dimensional patterning of the substrate that may eliminate the critical problem of edge roughness in graphene nanoribbons.
Download or read book Graphene Nanoelectronics written by Hassan Raza and published by Springer Science & Business Media. This book was released on 2012-03-05 with total page 611 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene is a perfectly two-dimensional single-atom thin membrane with zero bandgap. It has attracted huge attention due to its linear dispersion around the Dirac point, excellent transport properties, novel magnetic characteristics, and low spin-orbit coupling. Graphene and its nanostructures may have potential applications in spintronics, photonics, plasmonics and electronics. This book brings together a team of experts to provide an overview of the most advanced topics in theory, experiments, spectroscopy and applications of graphene and its nanostructures. It covers the state-of-the-art in tutorial-like and review-like manner to make the book useful not only to experts, but also newcomers and graduate students.
Download or read book Quantum Transport in Epitaxial Graphene on Silicon Carbide 0001 written by Johannes Jobst and published by . This book was released on 2013-02-28 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Graphene on Silicon Carbide Surfaces written by Christian Riedl and published by . This book was released on 2010 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Selective Epitaxial Graphene Growth on Silicon Carbide written by Farhana Zaman and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for post-CMOS nanoelectronics has led to the investigation of innovative device structures and materials. Graphene, a zero bandgap semiconductor with ballistic transport properties, has great potential to extend diversification and miniaturization beyond the limits of CMOS. The goal of this work is to study the growth of graphene on SiC using the novel method of selective graphitization. The major contributions of this research are as follows - First, epitaxial graphene is successfully grown on selected regions of SiC not capped by AlN deposited by molecular beam epitaxy. This contribution enables the formation of electronic-grade graphene in desired patterns without having to etch the graphene or expose it to any detrimental contact with external chemicals. Etching of AlN opens up windows to the SiC in desirable patterns for subsequent graphitization without leaving etch-residues (determined by XPS). Second, the impact of process parameters on the growth of graphene is investigated. Temperature, time, and argon pressure are the primary growth-conditions altered. A temperature of 1400oC in 1 mbar argon for 20 min produced the most optimal graphene growth without significant damage to the AlN capping-layer. Third, first-ever electronic transport measurements are achieved on the selective epitaxial graphene. Hall mobility of about 1550 cm2/Vs has been obtained to date. Finally, the critical limitations of the selective epitaxial graphene growth are enumerated. The advent of enhanced processing techniques that will overcome these limitations will create a multitude of opportunities for applications for graphene grown in this manner. It is envisaged to be a viable approach to fabrication of radio-frequency field-effect transistors.
Download or read book Application of Epitaxial Graphene Layers on Silicon Carbide in the Technology of Semiconductor Devices written by Tymoteusz Ciuk and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Interface Between Epitaxial Graphene and Silicon Carbide a First principl Study written by Julie Risse and published by . This book was released on 2009 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Outstanding Properties of Epitaxial Graphene Grown from Silicon Carbide Substrate written by Amira Ben Gouider Trabelsi and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Polarization Doping and Work Function of Epitaxial Graphene on Silicon Carbide written by Samir Mammadov and published by . This book was released on 2019* with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide Biotechnology written by Stephen E. Saddow and published by Elsevier. This book was released on 2011-11-14 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions. Discusses Silicon Carbide biomedical materials and technology in terms of their properties, processing, characterization, and application, in one book, from leading professionals and scientists Critical assesses existing literature, patents and FDA approvals for clinical trials, enabling the rapid assimilation of important data from the current disparate sources and promoting the transition from technology research and development to clinical trials Explores long-term use and applications in vivo in devices and applications with advanced sensing and semiconducting properties, pointing to new product devekipment particularly within brain trauma, bone implants, sub-cutaneous sensors and advanced kidney dialysis devices
Download or read book 2 D Electronic Materials written by Dorr Oliver Campbell and published by . This book was released on 2015 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene holds great promise as a material for high-speed electronics, especially as Si technology approaches its performance limits. Growth of epitaxial graphene by thermal decomposition of SiC is considered to be one of the most promising production routes since it has the potential to produce homogenous, wafer-size films directly on a semi-insulating or semiconducting substrate. Furthermore, graphene's planar 2-D structure enables devices and circuit designs with standard top-down lithography and processing techniques. However, the growth mechanism of graphene on SiC is not very well understood and much work remains to be done to improve the morphology, domain size and epitaxial quality of the grown graphene in order to take advantage of the unique properties of the material. This research work was aimed at using a modified CVD chamber in the Cornell University Wide-Bandgap-Semiconductor Laboratory to optimize the growth of epitaxial graphene by controlled decomposition of 6H-SiC(0001) in an argon mediated gas flow at near atmospheric pressure. Grown films were characterized using Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. Uniform large-area monolayer and few-layer epitaxial graphene were successfully grown on SiC terraces of up to 8 [MICRO SIGN]m wide, and with Hall mobilities of up to 840 cm2/V.s. The as-grown graphene was found to be intrinsically electron doped with sheet carrier density in the range of 3 - 9 x 1012 cm-2. However, certain growth features that tended to disrupt growth by uniform step flow decomposition were observed. These included deep rounded pits at higher temperatures, shallow triangular pits, arrow-like incursions across terraces, finger growths, residual SiC islands on terraces, nucleation of graphene at multiple defect points on terraces, and extra graphene layers at step edges. Further research is required to determine the mechanisms of formation of these features and to determine how they can be eliminated or reduced. For the first time SiC grown epitaxial graphene films, transferred from the substrate by a special process, was imaged in plan-view by TEM. The TEM images, along with selected-area electron diffraction, showed that a bilayer film had the AB Bernal stacking.!
Download or read book Free standing Epitaxial Graphene on Silicon Carbide and Transport Barriers in Layered Materials written by Shriram Shivaraman and published by . This book was released on 2013 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis is based on the topic of layered materials, in which different layers interact with each other via van der Waals forces. The majority of this thesis deals with epitaxial graphene (EG) obtained from silicon carbide (SiC). Free-standing epitaxial graphene (FSEG) structures are produced from EG using a photoelectrochemical (PEC) etching process developed for making suspended graphene structures on a large-scale. These structures are investigated for their mechanical and electrical properties. For doubly-clamped FSEG structures, a unique U-beam effect is observed which causes orders of magnitude increase in their mechanical resonance frequency compared to that expected using simple beam theory. Combined magnetotransport and Raman spectroscopy studies reveal that FSEG devices produced from nominally monolayer graphene on the Si-face of SiC exhibit properties of an inhomogeneously doped bilayer after becoming suspended. This suggests that the buffer layer which precedes graphene growth on the Si-face of SiC gets converted to a graphene layer after the PEC etching process. In the second theme of this thesis, transport barriers in layered materials are investigated. The EG-SiC interface is studied using a combination of electrical (I-V, C-V) and photocurrent spectroscopy techniques. It is shown that the interface may be described as having a Schottky barrier for electron transport with a Gaussian distribution of barrier heights. Another interface explored in this work is that between different layers of MoS2, a layered material belonging to the class of transition metal dichalcogenides. This interface maybe thought of as a one-dimensional junction. Fourpoint transport measurements indicate the presence of a barrier for electron transport at this interface. A simple model of the junction as a region with an increased threshold voltage and degraded mobility is suggested. The final chapter is a collection of works based on the topic of layered materials, which are not related to the main theme of the thesis. They include fabrication and characterization details of a dual-gated bilayer graphene device, an investigation of the graphene-Si interface and hexagonal boron nitride-based membranes. These are presented in the hope that they may be useful for further investigations along those directions.
Download or read book Structural Characterization of Epitaxial Graphene on Silicon Carbide written by Joanna R. Hass and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon successor to silicon electronics. Ballistic conduction at room temperature and a linear dispersion relation that causes carriers to behave as massless Dirac fermions are features that make graphene promising for high-speed, low-power devices. The critical advantage of epitaxial graphene (EG) grown on SiC is its compatibility with standard lithographic procedures.
