Download or read book Enhanced Plasma Etching for Group III V Semiconductors written by Alexandros T. Demos and published by . This book was released on 1993 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Etching of III V Semiconductors written by Peter H. L. Notten and published by Elsevier Science & Technology. This book was released on 1991 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Magnetron Enhanced Reactive Ion Etching of Group III Nitride Semiconductor Materials written by and published by . This book was released on 1996 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: Magnetron enhanced reactive ion etch rates of GaN, AlN, and InN wide bandgap semiconductors were investigated as a function of cathode power, pressure, and flow rate in BCl3 plasmas. Etch rates were obtained which were significantly higher than previously reported for dry etching of these materials. Surface analysis of etched samples revealed the presence of boron and chlorine residues. Etching produced a gallium surface deficiency in GaN extending 10 nm below the surface, and a preferential loss of nitrogen in InN. Etch rates were determined for the ternary alloys In(0.25)Ga(0.75)N and In(0.75)Al(0.25)N as a function of the addition of H2, SF6, and Ar to BC13. In(0.25)Ga(0.75)N etch rates increased for additions up to 60% H2, 20% SF6 and 60% Ar concentrations in the gas mixtures, with higher additions producing a decrease in etch rates. For In(0.75)Al(0.25)N, etch rate increased slightly for Ar concentrations up to 40%, while H2 and SF6 additions reduced etch rates.
Download or read book Inductively Coupled Plasma Etching of III V Semiconductors in BCl 3 Based Chemistries written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A parametric study of etch rates and surface morphologies of In-containing compound semiconductors (InP, InGaAs, InGaAsP, InAs and AlInAs) obtained by BClj-based Inductively Coupled Plasmas is reported. Etch rates in the range 1,500-3,000 & min. are obtained for all the materials at moderate source powers (500 W), with the rates being a strong function of discharge composition, rf chuck power and pressure. Typical root-mean-square surface roughness of-5 nm were obtained for InP, which is worse than the values obtained for Ga-based materials under the same conditions ( -1 run). The near surface of etched samples is typically slightly deficient in the group V element, but the depth of this deficiency is small (a few tens of angstroms).
Download or read book Dry Etching for Microelectronics written by R.A. Powell and published by Elsevier. This book was released on 2012-12-02 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book is the inclusion of an extensive literature review of dry processing, compiled by search of computerized data bases. A subject index allows ready access to the key points raised in each of the chapters.
Download or read book Plasma Etching of Antimonide Based III V Semiconductor Materials and Device Structures written by Jeffery P. Langer and published by . This book was released on 2005 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Inductively Coupled Plasma Etching of III V Semiconductors in BCl 3 Based Chemistries written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: BC13, with addition of Nz, Ar or Hz, is found to provide smooth anisotropic pattern transfer in GaAs, GaN, GaP, GaSb and AIGriAs under Inductively Coupled Plasma conditions, Maxima in the etch rates for these materials are observed at 33% N2 or 87$'40 Hz (by flow) addition to BC13, whereas Ar addition does not show this behavior. Maximum etch rates are typically much higher for GaAs, Gap, GaSb and AIGaAs ( -1,2 @rein) than for GaN ( -0.3 ymu'min) due to the higher bond energies of the iatter. The rates decrease at higher pressure, saturate with source power (ion flux) and tend to show maxima with chuck power (ion energy). The etched surfaces remain stoichiometric over abroad range of plasma conditions.
Download or read book Handbook of Advanced Plasma Processing Techniques written by R.J. Shul and published by Springer Science & Business Media. This book was released on 2011-06-28 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.
Download or read book Plasma Properties Deposition and Etching written by J.J. Pouch and published by Trans Tech Publications Ltd. This book was released on 1993-10-28 with total page 749 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing 42 invited papers, this fine book covers a broad range of subjects on plasmas and applications. In the first section, plasma properties and methods used to characterize the plasma are addressed. Many of these papers also cover deposition or etching of particular materials. The second part focuses on the application of various plasma techniques used to deposit thin films, and on the resulting film properties. Finally, the application of plasma etching to the fabrication of silicon-based circuits, plasma etching of III-V compound semiconductors and other processing applications are discussed in the third and last section.
Download or read book Plasma Processing of Semiconductors written by P.F. Williams and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.
Download or read book Plasma Processing of Semiconductors written by Paul Williams and published by Springer Science & Business Media. This book was released on 1997-05-31 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.
Download or read book The Plasma Etching of III V Semiconductor Materials written by A. J. Carter and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Etching written by M. Sugawara and published by OUP Oxford. This book was released on 1998-05-28 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this book is the remarkable advances in understanding of low pressure RF (radio frequency) glow discharges. A basic analytical theory and plasma physics are explained. Plasma diagnostics are also covered before the practicalities of etcher use are explored.
Download or read book Plasma Etching Processes for Sub quarter Micron Devices written by G. S. Mathad and published by The Electrochemical Society. This book was released on 2000 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Processing of Wide Band Gap Semiconductors written by S. J. Pearton and published by Cambridge University Press. This book was released on 2013-01-15 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Download or read book Compound Semiconductor Devices written by Kenneth A. Jackson and published by John Wiley & Sons. This book was released on 2008-11-21 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductor Devices provides a comprehensive insight into today ́s standard technologies, covering the vast range of semiconductor products and their possible applications. The materials covered runs from the basics of conventional semiconductor technology through standard,power and opto semiconductors, to highly complex memories and microcontrollers and the special devices and modules for smartcards, automotive electronics, consumer electronics and telecommunications. Some chapters are devoted to the production of semiconductor components and their use in electronic systems as well as to quality management. The book offers students and users a unique overview of technology, architecture and areas of application of semiconductor products.
Download or read book Anisotropic Low energy Electron enhanced Etching of Semiconductors in DC Plasma written by Pinckney Alston Steiner (IV) and published by . This book was released on 1993 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
