Download or read book Emerging Non volatile Memories Magnetic and Resistive Technologies written by and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Emerging Non Volatile Memories written by Seungbum Hong and published by Springer. This book was released on 2014-11-18 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.

Download or read book Emerging Memory Technologies written by Yuan Xie and published by Springer Science & Business Media. This book was released on 2013-10-21 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.

Download or read book Advances in Non volatile Memory and Storage Technology written by Yoshio Nishi and published by Woodhead Publishing. This book was released on 2019-06-15 with total page 662 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory

Download or read book Emerging Non volatile Memory Technologies written by Wen Siang Lew and published by Springer Nature. This book was released on 2021-01-09 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.

Download or read book Non volatile Memories written by Pierre-Camille Lacaze and published by John Wiley & Sons. This book was released on 2014-12-02 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

Download or read book Nonvolatile Memory Design written by Hai Li and published by CRC Press. This book was released on 2017-12-19 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Download or read book Emerging Non volatile Memory Technologies written by Wen Siang Lew and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.

Download or read book Advances in Non volatile Memory and Storage Technology written by Yoshio Nishi and published by Elsevier. This book was released on 2014-06-24 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Download or read book Phase Change Memory written by Moinuddin K. Qureshi and published by Morgan & Claypool Publishers. This book was released on 2011-11-11 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories

Download or read book Design Exploration of Emerging Nano scale Non volatile Memory written by Hao Yu and published by Springer Science & Business. This book was released on 2014-04-18 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; • Provides both theoretical analysis and practical examples to illustrate design methodologies; • Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.

Download or read book Emerging Memories written by Betty Prince and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging Memories: Technologies and Trends attempts to provide background and a description of the basic technology, function and properties of emerging as well as discussing potentially suitable applications. This book explores a range of new memory products and technologies. The concept for some of these memories has been around for years. A few completely new. Some involve materials that have been in volume production in other type of devices for some time. Ferro-electrics, for example, have been used in capacitors for more than 30 years. In addition to looking at using known devices and materials in novel ways, there are new technologies being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the new polymer memories which hold the potential for the significant manufacturing reduction. Emerging Memories: Technologies and Trends is a useful reference for the professional engineer in the semiconductor industry.

Download or read book Sensing of Non Volatile Memory Demystified written by Swaroop Ghosh and published by Springer. This book was released on 2018-08-10 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges across the memory technologies are highlighted and their solutions in mature technology are discussed, enabling innovation of sensing technologies for future NVMs. Coverage includes sensing techniques ranging from well-established NVMs such as hard disk, flash, Magnetic RAM (MRAM) to emerging NVMs such as ReRAM, STTRAM, FeRAM and Domain Wall Memory will be covered.

Download or read book Developments in Data Storage written by S. N. Piramanayagam and published by John Wiley & Sons. This book was released on 2011-10-11 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: A timely text on the recent developments in data storage, from a materials perspective Ever-increasing amounts of data storage on hard disk have been made possible largely due to the immense technological advances in the field of data storage materials. Developments in Data Storage: Materials Perspective covers the recent progress and developments in recording technologies, including the emerging non-volatile memory, which could potentially become storage technologies of the future. Featuring contributions from experts around the globe, this book provides engineers and graduate students in materials science and electrical engineering a solid foundation for grasping the subject. The book begins with the basics of magnetism and recording technology, setting the stage for the following chapters on existing methods and related research topics. These chapters focus on perpendicular recording media to underscore the current trend of hard disk media; read sensors, with descriptions of their fundamental principles and challenges; and write head, which addresses the advanced concepts for writing data in magnetic recording. Two chapters are devoted to the highly challenging area in hard disk drives of tribology, which deals with reliability, corrosion, and wear-resistance of the head and media. Next, the book provides an overview of the emerging technologies, such as heat-assisted magnetic recording and bit-patterned media recording. Non-volatile memory has emerged as a promising alternative storage option for certain device applications; two chapters are dedicated to non-volatile memory technologies such as the phase-change and the magnetic random access memories. With a strong focus on the fundamentals along with an overview of research topics, Developments in Data Storage is an ideal reference for graduate students or beginners in the field of magnetic recording. It also serves as an invaluable reference for future storage technologies including non-volatile memories.

Download or read book Modeling and Architecting Emerging Non volatile Resistive Random Access Memory for Future Computer System written by Dimin Niu and published by . This book was released on 2013 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling And Design Analysis Of Emerging Non volatile Memories For Future Computer Systems written by Yang Zheng and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As traditional SRAM and DRAM are facing leakage power and fabrication difficulties beyond 22nm technology, emerging memory technologies such as spin transfer-torque RAM (STT-RAM), phase-change RAM (PCRAM), and resistive RAM (ReRAM) have been widely studied as promising candidates for the next generation memory technologies. Among all these NVM technologies, STT-RAM is expected to be used as on-chip caches for its fast access latency and better scalability. While ReRAM is predicted to replace NAND flash in the foreseeable future due to its extremely high density.However, several challenges have to be dealt with before these emerging memory technologies being commercialized. Although the read latency of STT-RAM is relatively fast, the write latency remains to be slow. Also, traditional 1-Transistor-1-MTJ cell structure suffers from severe leakage current and dynamic power as the technology node continuously shrinks down. On the other hand, ReRAM also suffers from reliability problems. Due to the stochastic nature of memristor, ReRAM device not only suffers from spatial variation, but also temporal variation. As the cross-point structure is commonly used for ReRAM devices since it offers higher density and lower cost, the reliability issue of ReRAM becomes a constraint on preventing ReRAM being commercialized as large-scale memory.The thesis proposes models and analysis on three novel array-level structures to mitigate the problems existed in STT-RAM based memory technology from different aspects. The parallel shared 1TNJ structure decreases the cell area by rerouting the wires between the access transistor and the MTJ so that one transistor is responsible for multiple MTJs. On the other hand, the 1S1J cross-point structure uses selector as the access transistor for better scalability. Moreover, The FinFET device is introduced to cut off leakage current and reduce the cell area. The thesis also proposes a model for analyzing the reliability and variability issues in ReRAM based memory technology. The thesis provides a detailed analysis on different reliability issues, and proposes several mitigation solutions.

Download or read book Applications of Emerging Memory Technology written by Manan Suri and published by Springer. This book was released on 2019-07-16 with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book intends to bring under one roof research work of leading groups from across the globe working on advanced applications of emerging memory technology nanodevices. The applications dealt in the text will be beyond conventional storage application of semiconductor memory devices. The text will deal with material and device physical principles that give rise to interesting characteristics and phenomena in the emerging memory device that can be exploited for a wide variety of applications. Applications covered will include system-centric cases such as – caches, NVSRAM, NVTCAM, Hybrid CMOS-RRAM circuits for: Machine Learning, In-Memory Computing, Hardware Security - RNG/PUF, Biosensing and other misc beyond storage applications. The book is envisioned for multi-purpose use as a textbook in advanced UG/PG courses and a research text for scientists working in the domain.