Download or read book Capabilities of Electron Beam Semiconductor Active Devices written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1968 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some properties of a class of active elements employing an electron beam to control the output current of a semiconductor device are discussed in this paper. It is shown that the basic beam-semiconductor devices have high gains, fast response and large output capability. Numerical data are given that allow the capabilities of the device to be evaluated in a given application. It is shown that the extreme configurational flexibility of the device may be employed to enhance its basic performance capability as well as to realize unique devices that can rapidly perform complex functions. (Author.

Download or read book Electron Beam semiconductor Active Device written by and published by . This book was released on 1970 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Physics Research Electron Beam Semiconductor Active Devices Lowpass Amplifier and Pulse Systems Final Report written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1970 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Beam Semiconductor Devices written by M. Braun and published by . This book was released on 1973 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: N BEAMSDuring the course of the contract, five EBS amplifiers, designated as EE-155, and 15 mounted EBS diodes, designated as EE-154 A and B, were developed, fabricated and delivered to the USAECOM. Diode area was 10 sq. cm and 20 sq. mm, active width of N region 25 micrometers, with resistivity of 20 ohm-cm. The electron beam of the amplifiers is generated and modulated by a cathode grid structure, with a focus electrode for beam diameter control. Best back bias voltage of the 20 diodes delivered exceeds 400 volts, with an average of 300 volts. First tests at USAECOM were done on a 20 sq. mm diode tube at 235V back bias voltage. Peak current into 3.8 ohm load was 46A, a peak power of 8 KW with a pulse risetime of 1.5 ns. Risetime, when corrected for the input pulse, is approximately 1 ns. (Author).

Download or read book Electron Beam Bombardment Effects on Active Devices written by Walford Ho and published by . This book was released on 1966 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave Active Devices Vacuum And Solid State written by M. L. Sisodia and published by New Age International. This book was released on 2006 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Book Exhaustively Explains The Fundamental Physical And Theoretical Principles Underlying Microwave And Millimeter Wave Active Devices. Both Vacuum And Solid State Devices Are Suitably Discussed.The Book Begins By Highlighting The Applications Of Microwaves And Various Types Of Devices. It Then Explains Vacuum Devices Including Gyrodevices And Other High Power Sources.Various Two And Three Terminal Solid State Devices Are Then Discussed.These Include Hbts, Hfets And Rtds.The Text Is Amply Illustrated Through A Large Number Of Suitable Diagrams And Worked Out Examples. Practice Problems, Review Questions And Extensive References Are Also Given At The End Of Each Chapter.The Book Would Serve As An Exhaustive Text For Both Undergraduate And Postgraduate Students Of Physics And Electronics.

Download or read book Electron Beam Pn Junction Sctive Devices and Measurements written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1967 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Beam Pn Junction Active Devices and Measurements written by Carroll Boyd Norris (Jr.) and published by . This book was released on 1966 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chapter I discusses past work with electron beam - pn junction active devices and explain the motivations for the present study. Chapter II describes measurement of the average energy storage energy required for creation of an electron-hole pair in single-crystal silicon by low-energy electron bombardment storage energy is found to be independent of bombardment energy and equal to approximately 3.6 eV for bombardment energies from 1 to 12 KeV. Chapter III describes measurement of the drift velocities of carriers in silicon at high electric fields by a time-of-flight technique. Carrier velocities are determined absolutely by measuring the transit time of carriers through a region of approximately uniform electric field and known width in a P(+)-Nu-n(+) diode. Drift velocity data for carriers in silicon are presented for electric fields between 4 and 40 KV/cm and the present data are compared with those obtained from measurements of current density in bulk samples as a function of electric field. Chapter IV employs the results obtained in Chapters II and III to analyze the dynamic response of electron beam - pn junction active devices. The primary assumptions in this analysis are that (1) carriers are created near one edge of the depletion region of the beam diode; (2) carriers traverse the depletion region with constant drift velocity; and (3) the beam diode is connected to a resistive load impedance, such as a reflectionless transmission line. It is shown that there exist optimum depletion region widths that maximize system performance under conditions of sinusoidal steady state and transient excitation.

Download or read book Electron Beam Semiconductor High Current Video Pulser written by Richard I. Knight and published by . This book was released on 1974 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ten EBS high current pulse amplifiers were fabricated, tested, and delivered to ECOM for life testing. The diodes used in these devices had an active area of 0.35 sq cm and were fabricated with an integral gold beam shield over the junction boundry to prevent diode reverse breakdown degradation due to beam illumination. The diodes were mounted on BeO substrates in order to be able to x-ray and evaluate the diode to substrate bond. Each of the devices was tested at approximately 40 A peak output into a 1 ohm load with a pulse risetime of 3 nanoseconds. (Author).

Download or read book Advances in Electronics and Electron Physics written by and published by Academic Press. This book was released on 1978-02-22 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Electronics and Electron Physics

Download or read book Electron Beam Technology in Microelectronic Fabrication written by George Brewer and published by Elsevier. This book was released on 2012-12-02 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron-Beam Technology in Microelectronic Fabrication presents a unified description of the technology of high resolution lithography. This book is organized into six chapters, each treating a major segment of the technology of high resolution lithography. The book examines topics such as the physics of interaction of the electrons with the polymer resist in which the patterns are drawn, the machines that generate and control the beam, and ways of applying electron-beam lithography in device fabrication and in the making of masks for photolithographic replication. Chapter 2 discusses fundamental processes by which patterns are created in resist masks. Chapter 3 describes electron-beam lithography machines, including some details of each of the major elements in the electron-optical column and their effect on the focused electron beam. Chapter 4 presents the use of electron-beam lithography to make discrete devices and integrated circuits. Chapter 5 looks at the techniques and economics of mask fabrication by the use of electron beams. Finally, Chapter 6 presents a comprehensive description and evaluation of the several high resolution replication processes currently under development. This book will be of great value to students and to engineers who want to learn the unique features of high resolution lithography so that they can apply it in research, development, or production of the next generation of microelectronic devices and circuits.

Download or read book Electron Beam Semiconductor Devices written by United States. National Technical Information Service and published by . This book was released on 1976 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Electron Beam Semiconductor EBS Amplifier written by Robert M. True and published by . This book was released on 1980 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Electron Beam Semiconductor (EBS) concept has existed for three decades; but only within the last decade has an active, well-defined program been underway to develop devices that can operate as high-power radio frequency(RF) amplifiers, fast risetime switches, and current and voltage pulse amplifiers. This report discusses the test procedures, data and results of reliability testing of RF and video pulse EBS amplifiers at Electronics Research and Development Command (ERADCOM), Fort Monmouth, New Jersey. Also, the experimental analysis of the series-connected diode EBS device is described in detail. Finally, the report concludes with a discussion of the state-of-the-art of EBS and future trends of the technology. (Author).

Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Techniques and Applications of Electron Beam Induced Current in Semiconductor Devices written by Martin R. Johnson and published by . This book was released on 1978 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SEM Microcharacterization of Semiconductors written by D. B. Holt and published by Academic Press. This book was released on 2013-10-22 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applications of SEM techniques of microcharacterization have proliferated to cover every type of material and virtually every branch of science and technology. This book emphasizes the fundamental physical principles. The first section deals with the foundation of microcharacterization in electron beam instruments and the second deals with the interpretation of the information obtained in the main operating modes of a scanning electron microscope.

Download or read book Electron Beam Semiconductor Device with Mesa Diode Reliability and Failure Determination written by K. Garewal and published by . This book was released on 1975 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ten water cooled EBS devices were fabricated, processed and delivered to ECOM for life and reliability tests. Of 4 tubes tested thus far one was operated for 1200 hours at a maximum dissipation of 7 watts. Others had relatively shorter life times. In depth analysis of failure was carried out on 2 tubes.